5 results
Search Results
Now showing 1 - 5 of 5
- ItemPhotoluminescence at room temperature of liquid-phase crystallized silicon on glass(New York, NY : American Inst. of Physics, 2016) Vetter, Michael; Schwuchow, Anka; Andrä, GudrunThe room temperature photoluminescence (PL) spectrum due band-to-band recombination in an only 8 μm thick liquid-phase crystallized silicon on glass solar cell absorber is measured over 3 orders of magnitude with a thin 400 μm thick optical fiber directly coupled to the spectrometer. High PL signal is achieved by the possibility to capture the PL spectrum very near to the silicon surface. The spectra measured within microcrystals of the absorber present the same features as spectra of crystalline silicon wafers without showing defect luminescence indicating the high electronic material quality of the liquid-phase multi-crystalline layer after hydrogen plasma treatment.
- ItemMagnetic field and angle-dependent photoluminescence of a fiber-coupled nitrogen vacancy rich diamond(Melville, NY : American Inst. of Physics, 2021) Wunderlich, Ralf; Staacke, Robert; Knolle, Wolfgang; Abel, Bernd; Meijer, JanHere, we investigate the magnetic field dependent photoluminescence (PL) of a fiber-coupled diamond single crystal with a high density of nitrogen vacancy (NV) centers. Angle-dependent magnetic field sweep measurements between 0 and 111 mT were performed using an oscillating illumination combined with lock-in techniques. Besides the expected superposed PL of differently oriented NV centers, a zoo of features in the PL are found. These features can be associated with level anti-crossings and cross relaxations. In particular, PL measurements allowed us to detect auto-cross relaxation between coupled NV centers. Moreover, the PL measurements at low magnetic fields show dips suggesting an interaction of NV centers with additional spin defects. The results presented here are not only a study for NV-based fiber-coupled sensors made of diamond, but also show a way to investigate with manageable effort and purely an optical multispin interaction with at least one NV center as a constituent.
- ItemPolarized recombination of acoustically transported carriers in GaAs nanowires(London : BioMed Central, 2012) Möller, Michael; Hernández-Mínguez, Alberto; Breuer, Steffen; Pfüller, Carsten; Brandt, Oliver; de Lima Jr, Mauricio M.; Cantarero, Andrés; Geelhaar, Lutz; Riechert, Henning; Santos, Paulo V.The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoexcited electrons and holes in GaAs nanowires deposited on a SAW delay line on a LiNbO3 crystal. The carriers generated in the nanowire by a focused light spot are acoustically transferred to a second location where they recombine. We show that the recombination of the transported carriers occurs in a zinc blende section on top of the predominant wurtzite nanowire. This allows contactless control of the linear polarized emission by SAWs which is governed by the crystal structure. Additional polarization-resolved photoluminescence measurements were performed to investigate spin conservation during transport.
- ItemTriggered polarization-entangled photon pairs from a single quantum dot up to 30 K(College Park, MD : Institute of Physics Publishing, 2007) Hafenbrak, R.; Ulrich, S.M.; Michler, P.; Wang, L.; Rastelli, A.; Schmidt, O.G.The radiative biexciton-exciton decay in a semiconductor quantum dot (QD) has the potential of being a source of triggered polarization-entangled photon pairs. However, in most cases the anisotropy-induced exciton fine structure splitting destroys this entanglement. Here, we present measurements on improved QD structures, providing both significantly reduced inhomogeneous emission linewidths and near-zero fine structure splittings. A high-resolution detection technique is introduced which allows us to accurately determine the fine structure in the photoluminescence emission and therefore select appropriate QDs for quantum state tomography. We were able to verify the conditions of entangled or classically correlated photon pairs in full consistence with observed fine structure properties. Furthermore, we demonstrate reliable polarization-entanglement for elevated temperatures up to 30 K. The fidelity of the maximally entangled state decreases only a little from 72% at 4 K to 68% at 30 K. This is especially encouraging for future implementations in practical devices. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.
- ItemOptical properties of single semiconductor nanowires and nanowire ensembles – probing surface physics by photoluminescence spectroscopy(Berlin : Humboldt-Universität zu Berlin, 2011) Pfüller, CarstenThis thesis presents a detailed investigation of the optical properties of semiconductor nanowires (NWs) in general and single GaN NWs and GaN NW ensembles in particular by photoluminescence (PL) spectroscopy. NWs are often considered as potential building blocks for future nanometer-scaled devices. This vision is based on several attractive features that are generally ascribed to NWs. In the first part of the thesis, some of these features are examined using semiconductor NWs of different materials. On the basis of the temperature-dependent PL of Au- and self-assisted GaAs/(Al,Ga)As core-shell NWs, the influence of foreign catalyst particles on the optical properties of NWs is investigated. The effect of the substrate choice is studied by comparing the PL of ZnO NWs grown on Si, Sapphire, and ZnO substrates. The major part of this thesis discusses the optical properties of GaN NWs. The investigation of the PL of single GaN NWs and GaN NW ensembles reveals the significance of their large surface-to-volume ratio and that each NW exhibits its own individual recombination behavior. An unexpected broadening of the donor-bound exciton transition is explained by the abundant presence of surface donors in NWs. The existence and statistical relevance of these surface donors is confirmed by PL experiments of single GaN NWs which are either dispersed or free-standing. Furthermore, the influence of electric fields on the optical properties of GaN NWs is investigated and the coupling of light with GaN NWs is studied by reflectance and Raman measurements. The central results of this thesis motivate the introduction of a model that explains the typically observed nonexponential recombination dynamics in NW ensembles. It is based on a distribution of recombination rates. Preliminary simulations using this model describe the nonexponential decay of GaN NW ensembles satisfactorily and allow for an estimation of their internal quantum efficiency.