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DDC: 530 × Subject: Sapphire ×

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Now showing 1 - 3 of 3
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    High-temperature annealing of AlN films grown on 4H-SiC
    (New York, NY : American Inst. of Physics, 2020) Brunner, F.; Cancellara, L.; Hagedorn, S.; Albrecht, M.; Weyers, M.
    The effect of high-temperature annealing (HTA) at 1700 °C on AlN films grown on 4H-SiC substrates by metalorganic vapor phase epitaxy has been studied. It is shown that the structural quality of the AlN layers improves significantly after HTA similar to what has been demonstrated for AlN grown on sapphire. Dislocation densities reduce by one order of magnitude resulting in 8 × 108 cm-2 for a-type and 1 × 108 cm-2 for c-type dislocations. The high-temperature treatment removes pits from the surface by dissolving nanotubes and dislocations in the material. XRD measurements prove that the residual strain in AlN/4H-SiC is further relaxed after annealing. AlN films grown at higher temperature resulting in a lower as-grown defect density show only a marginal reduction in dislocation density after annealing. Secondary ion mass spectrometry investigation of impurity concentrations reveals an increase of Si after HTA probably due to in-diffusion from the SiC substrate. However, C concentration reduces considerably with HTA that points to an efficient carbon removal process (i.e., CO formation). © 2020 Author(s).
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    8 fs laser pulses from a compact gas-filled multi-pass cell
    (Washington, DC : Soc., 2021) Rueda, P.; Videla, F.; Witting, T.; Torchia, G.A.; Furch, F.J.
    Compression of 42 fs, 0.29 mJ pulses from a Ti:Sapphire amplifier down to 8 fs (approximately 3 optical cycles) is demonstrated by means of spectral broadening in a compact multi-pass cell filled with argon. The efficiency of the nonlinear pulse compression is limited to 45 % mostly by losses in the mirrors of the cell. The experimental results are supported by 3-dimensional numerical simulations of the nonlinear pulse propagation in the cell that allow us to study spatio-spectral properties of the pulses after spectral broadening.
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    Vibrational sum-frequency generation spectroscopy of lipid bilayers at repetition rates up to 100 kHz
    (Melville, NY : American Institute of Physics, 2018) Yesudas, Freeda; Mero, Mark; Kneipp, Janina; Heiner, Zsuzsanna
    Broadband vibrational sum-frequency generation (BB-VSFG) spectroscopy has become a well-established surface analytical tool capable of identifying the orientation and structure of molecular layers. A straightforward way to boost the sensitivity of the technique could be to increase the laser repetition rate beyond that of standard BB-VSFG spectrometers, which rely on Ti:sapphire lasers operating at repetition rates of 1-5 kHz. Nevertheless, possible thermally induced artifacts in the vibrational spectra due to higher laser average powers are unexplored. Here, we discuss laser power induced temperature accumulation effects that distort the BB-VSFG spectra of 1,2-diacyl-sn-glycero-3-phosphocholine at an interface between two transparent phases at repetition rates of 5, 10, 50, and 100 kHz at constant pulse energy. No heat-induced distortions were found in the spectra, suggesting that the increase in the laser repetition rate provides a feasible route to an improved signal-to-noise ratio or shorter data acquisition times in BB-VSFG spectroscopy for thin films on transparent substrates. The results have implications for future BB-VSFG spectrometers pushing the detection limit for molecular layers with low surface coverage.