Search Results

Now showing 1 - 2 of 2
  • Item
    Bicrystalline grain boundary junctions of Co-doped and P-doped Ba-122 thin films
    (Milton Park : Taylor & Francis, 2014) Schmidt, S.; Döring, S.; Schmidl, F.; Kurth, F.; Iida, K.; Holzapfel, B.; Kawaguchi, T.; Mori, Y.; Ikuta, H.; Seidel, P.
    We prepared GB junctions of Ba(Fe0.9Co0.1)2As2 thin films on bicrystalline [00 l]-tilt SrTiO3 substrates. The junctions show clear Josephson effects. Electrical characterization shows asymmetric I-V characteristics which can be described within the resistively shunted junction (RSJ) model. A large excess current is observed. Their formal ICRN product is 20.2 μV at 4.2 K, which is decreased to 6.5 μV when taking Iex into account. Fabrication methods to increase this value are discussed. Additionally, measurements on GB junctions of BaFe2(As0.66P0.34)2 thin films on LSAT bicrystalline substrates are shown. Their symmetric RSJ/flux flow-behavior exhibits a formal ICRN product of 45 μV, whereas the excess corrected value is ll μV.
  • Item
    Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
    (Melville, NY : American Inst. of Physics, 2016) Chabak, Kelson D.; Moser, Neil; Green, Andrew J.; Walker, Dennis E.; Tetlak, Stephen E.; Heller, Eric; Crespo, Antonio; Fitch, Robert; McCandless, Jonathan P.; Leedy, Kevin; Baldini, Michele; Wagner, Gunter; Galazka, Zbigniew; Li, Xiuling; Jessen, Gregg
    Sn-doped gallium oxide (Ga2O3) wrap-gate fin-array field-effect transistors (finFETs) were formed by top-down BCl3 plasma etching on a native semi-insulating Mg-doped (100) β-Ga2O3 substrate. The fin channels have a triangular cross-section and are approximately 300 nm wide and 200 nm tall. FinFETs, with 20 nm Al2O3 gate dielectric and ∼2 μm wrap-gate, demonstrate normally-off operation with a threshold voltage between 0 and +1 V during high-voltage operation. The ION/IOFF ratio is greater than 105 and is mainly limited by high on-resistance that can be significantly improved. At VG = 0, a finFET with 21 μm gate-drain spacing achieved a three-terminal breakdown voltage exceeding 600 V without a field-plate.