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- ItemNear-field dynamics of broad area diode laser at very high pump levels(New York, NY : American Inst. of Physics, 2011) Hempel, M.; Tomm, J.W.; Baeumler, M.; Konstanzer, H.; Mukherjee, J.; Elsaesser, T.Near-field properties of the emission of broad area semiconductor diode lasers under extremely high pumping of up to ∼50 times the threshold are investigated. A transition from a gain to thermally-induced index guiding is shown under operation with single pulses of 300 ns duration. At highest output powers, catastrophic optical damage is observed which is studied in conjunction with the evolution of time-averaged filamentary near-field properties. Dynamics of the process is resolved on a picosecond time scale.
- ItemNonlinear dynamical properties of frequency swept fiber-based semiconductor lasers(Bristol : IOP Publishing, 2021) Slepneva, Svetlana; Pimenov, AlexanderWe investigate dynamics of semiconductor lasers with fiber-based unidirectional ring cavity that can be used as frequency swept sources. We identify key factors behind the reach dynamical behavior of such lasers using state-of-the-art experimental and analytical methods. Experimentally, we study the laser in static, quasi-static and synchronization regimes. We apply experimental methods such as optical heterodyne or electric field reconstruction in order to characterize these regimes or study the mechanisms of transition between them. Using a delay differential equation model, we demonstrate that the presence of chromatic dispersion can lead to destabilization of the laser modes through modulational instability, which results in undesirable chaotic emission. We characterize the instability threshold both theoretically and experimentally, and demonstrate deterioration of the Fourier domain mode locking regime near the threshold.
- ItemScalable, high power line focus diode laser for crystallizing of silicon thin films(Amsterdam : Elsevier, 2010) Lichtenstein, N.; Baettig, R.; Brunner, R.; Müller, J.; Valk, B.; Gawlik, A.; Bergmann, J.; Falk, F.We present the design and performance of a diode laser module producing a high intensity line focus at 808 nm for material processing. The design is based on a linear array of 7 laser bars and beam forming optics featuring a micro-optic homogenizer. The module delivers a total output power of 900 W at 140 A and peak intensity created in the focus area of 10.3 kW/cm2. Two systems with line length of 5 cm and 10 cm at a large working distance of 110 mm have been realized. The chosen concept allows scaling in length by joining multiple modules which is of interest for material processing in industrial applications. Application results from laser crystallization of amorphous silicon seed layers used in the fabrication of photovoltaic cells for solar panels are given.
- ItemDelay-induced dynamics and jitter reduction of passively mode-locked semiconductor lasers subject to optical feedback(Bristol : IOP, 2012) Otto, C.; Lüdge, K.; Vladimirov, A.G.; Wolfrum, M.; Schöll, E.We study a passively mode-locked semiconductor ring laser subject to optical feedback from an external mirror. Using a delay differential equation model for the mode-locked laser, we are able to systematically investigate the resonance effects of the inter-spike interval time of the laser and the roundtrip time of the light in the external cavity (delay time) for intermediate and long delay times. We observe synchronization plateaus following the ordering of the well-known Farey sequence. Our results show that in agreement with the experimental results a reduction of the timing jitter is possible if the delay time is chosen close to an integer multiple of the inter-spike interval time of the laser without external feedback. Outside the main resonant regimes the timing jitter is drastically increased by the feedback.
- ItemSemiconductor saturable absorber mirror mode-locked Yb:YAP laser(Washington, DC : Soc., 2022) Lin, Zhang-Lang; Xue, Wen-Ze; Zeng, Huang-Jun; Zhang, Ge; Zhao, Yongguang; Xu, Xiaodong; Xu, Jun; Loiko, Pavel; Mateos, Xavier; Lin, Haifeng; Petrov, Valentin; Wang, Li; Chen, WeidongWe report on sub-30 fs pulse generation from a semiconductor saturable absorber mirror mode-locked Yb:YAP laser. Pumping by a spatially single-mode Yb fiber laser at 979 nm, soliton pulses as short as 29 fs were generated at 1091 nm with an average output power of 156 mW and a pulse repetition rate of 85.1 MHz. The maximum output power of the mode-locked Yb:YAP laser amounted to 320 mW for slightly longer pulses (32 fs) at an incident pump power of 1.52 W, corresponding to a peak power of 103 kW and an optical efficiency of 20.5%. To the best of our knowledge, this result represents the shortest pulses ever achieved from any solid-state Yb laser mode-locked by a slow, i.e., physical saturable absorber.
- ItemWatt-level femtosecond Tm-doped “mixed” sesquioxide ceramic laser in-band pumped by a Raman fiber laser at 1627 nm(Washington, DC : Soc., 2022) Zhang, Ning; Wang, Zhanxin; Liu, Shande; Jing, Wei; Huang, Hui; Huang, Zixuan; Tian, Kangzhen; Yang, Zhiyong; Zhao, Yongguang; Griebner, Uwe; Petrov, Valentin; Chen, WeidongWe report on a semiconductor saturable absorber mirror mode-locked Tm:(Lu,Sc)2O3 ceramic laser in-band pumped by a Raman fiber laser at 1627 nm. The nonlinear refractive index (n2) of the Tm:(Lu,Sc)2O3 ceramic has been measured to be 4.66 × 10-20 m2/W at 2000 nm. An average output power up to 1.02 W at 2060 nm is achieved for transform-limited 280-fs pulses at a repetition rate of 86.5 MHz, giving an optical efficiency with respect to the absorbed pump power of 36.4%. Pulses as short as 66 fs at 2076 nm are produced at the expense of output power (0.3 W), corresponding to a spectral bandwidth of 69 nm. The present work reveals the potential of Tm3+-doped sesquioxide transparent ceramics for power scaling of femtosecond mode-locked bulk lasers emitting in the 2-μm spectral range.