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Now showing 1 - 7 of 7
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    On the relationship between SiF4plasma species and sample properties in ultra low-k etching processes
    (New York, NY : American Inst. of Physics, 2020) Haase, Micha; Melzer, Marcel; Lang, Norbert; Ecke, Ramona; Zimmermann, Sven; van Helden, Jean-Pierre H.; Schulz, Stefan E.
    The temporal behavior of the molecular etching product SiF4 in fluorocarbon-based plasmas used for the dry etching of ultra low-k (ULK) materials has been brought into connection with the polymer deposition on the surface during plasma treatment within the scope of this work. For this purpose, time-resolved measurements of the density of SiF4 have been performed by quantum cascade laser absorption spectroscopy. A quantification of the non-linear time dependence was achieved by its characterization via a time constant of the decreasing SiF4 density over the process time. The time constant predicts how fast the stationary SiF4 density is reached. The higher the time constant is, the thicker the polymer film on top of the treated ultra low-k surface. A correlation between the time constant and the ULK damage was also found. ULK damage and polymer deposition were proven by Variable Angle Spectroscopic Ellipsometry and X-ray Photoelectron Spectroscopy. In summary, the observed decay of the etching product concentration over process time is caused by the suppressed desorption of the SiF4 molecules due to a more dominant adsorption of polymers. © 2020 Author(s).
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    High-temperature annealing of AlN films grown on 4H-SiC
    (New York, NY : American Inst. of Physics, 2020) Brunner, F.; Cancellara, L.; Hagedorn, S.; Albrecht, M.; Weyers, M.
    The effect of high-temperature annealing (HTA) at 1700 °C on AlN films grown on 4H-SiC substrates by metalorganic vapor phase epitaxy has been studied. It is shown that the structural quality of the AlN layers improves significantly after HTA similar to what has been demonstrated for AlN grown on sapphire. Dislocation densities reduce by one order of magnitude resulting in 8 × 108 cm-2 for a-type and 1 × 108 cm-2 for c-type dislocations. The high-temperature treatment removes pits from the surface by dissolving nanotubes and dislocations in the material. XRD measurements prove that the residual strain in AlN/4H-SiC is further relaxed after annealing. AlN films grown at higher temperature resulting in a lower as-grown defect density show only a marginal reduction in dislocation density after annealing. Secondary ion mass spectrometry investigation of impurity concentrations reveals an increase of Si after HTA probably due to in-diffusion from the SiC substrate. However, C concentration reduces considerably with HTA that points to an efficient carbon removal process (i.e., CO formation). © 2020 Author(s).
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    High-temperature electromechanical loss in piezoelectric langasite and catangasite crystals
    (Melville, NY : American Inst. of Physics, 2021) Suhak, Yuriy; Fritze, Holger; Sotnikov, Andrei; Schmidt, Hagen; Johnson, Ward L.
    Temperature-dependent acoustic loss Q−1 is studied in partially disordered langasite (LGS, La3Ga5SiO14) and ordered catangasite (CTGS, Ca3TaGa3Si2O14) crystals and compared with previously reported CTGS and langatate (LGT, La3Ga5.5Ta0.5O14) data. Two independent techniques, a contactless tone-burst excitation technique and contacting resonant piezoelectric spectroscopy, are used in this study. Contributions to the measured Q−1(T) are determined through fitting to physics-based functions, and the extracted fit parameters, including the activation energies of the processes, are discussed. It is shown that losses in LGS and CTGS are caused by a superposition of several mechanisms, including intrinsic phonon–phonon loss, point-defect relaxations, and conductivity-related relaxations.
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    Analyzer-free, intensity-based, wide-field magneto-optical microscopy
    (Melville, NY : American Inst. of Physics, 2021) Schäfer, Rudolf; Oppeneer, Peter M.; Ognev, Alexey; Samardak, Alexander; Soldatov, Ivan V.
    In conventional Kerr and Faraday microscopy, the sample is illuminated with plane-polarized light, and a magnetic domain contrast is generated by an analyzer making use of the Kerr or Faraday rotation. Here, we demonstrate possibilities of analyzer-free magneto-optical microscopy based on magnetization-dependent intensity modulations of the light. (i) The transverse Kerr effect can be applied for in-plane magnetized material, as demonstrated for an FeSi sheet. (ii) Illuminating that sample with circularly polarized light leads to a domain contrast with a different symmetry from the conventional Kerr contrast. (iii) Circular polarization can also be used for perpendicularly magnetized material, as demonstrated for garnet and ultrathin CoFeB films. (iv) Plane-polarized light at a specific angle can be employed for both in-plane and perpendicular media. (v) Perpendicular light incidence leads to a domain contrast on in-plane materials that is quadratic in the magnetization and to a domain boundary contrast. (vi) Domain contrast can even be obtained without a polarizer. In cases (ii) and (iii), the contrast is generated by magnetic circular dichroism (i.e., differential absorption of left- and right-circularly polarized light induced by magnetization components along the direction of light propagation), while magnetic linear dichroism (differential absorption of linearly polarized light induced by magnetization components transverse to propagation) is responsible for the contrast in case (v). The domain-boundary contrast is due to the magneto-optical gradient effect. A domain-boundary contrast can also arise by interference of phase-shifted magneto-optical amplitudes. An explanation of these contrast phenomena is provided in terms of Maxwell-Fresnel theory. © 2021 Author(s).
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    Crossover of skyrmion and helical modulations in noncentrosymmetric ferromagnets
    (Bristol : Institute of Physics Publishing, 2018) Leonov, A.O.; Bogdanov, A.N.
    The coupling between angular (twisting) and longitudinal modulations arising near the ordering temperature of noncentrosymmetric ferromagnets strongly influences the structure of skyrmion states and their evolution in an applied magnetic field. In the precursor states of cubic helimagnets, a continuous transformation of skyrmion lattices into the saturated state is replaced by the first-order processes accompanied by the formation of multidomain states. Recently the effects imposed by dominant longitudinal modulations have been reported in bulk MnSi and FeGe. Similar phenomena can be observed in the precursor regions of cubic helimagnet epilayers and in easy-plane chiral ferromagnets (e.g. in the hexagonal helimagnet CrNb3S6).
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    Valence effect on the thermopower of Eu systems
    (College Park, MD : American Physical Society, 2020) Stockert, U.; Seiro, S.; Seiro, S.; Caroca-Canales, N.; Hassinger, E.; Hassinger, E.; Geibel, C.
    We investigated the thermoelectric transport properties of EuNi2P2 and EuIr2Si2 to evaluate the relevance of Kondo interaction and valence fluctuations in these materials. While the thermal conductivities behave conventionally, the thermopower curves exhibit large values with pronounced maxima as typically observed in Ce- and Yb-based heavy-fermion materials. However, neither the positions of these maxima nor the absolute thermopower values at low temperature are in line with the heavy-fermion scenario and the moderately enhanced effective charge carrier masses. Instead, we may relate the thermopower in our materials to the temperature-dependent Eu valence by taking into account changes in the chemical potential. Our analysis confirms that valence fluctuations play an important role in EuNi2P2 and EuIr2Si2.
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    A liquid flatjet system for solution phase soft-x-ray spectroscopy
    (Melville, NY : AIP Publishing LLC, 2015) Ekimova, Maria; Quevedo, Wilson; Faubel, Manfred; Wernet, Philippe; Nibbering, Erik T. J.
    We present a liquid flatjet system for solution phase soft-x-ray spectroscopy. The flatjet set-up utilises the phenomenon of formation of stable liquid sheets upon collision of two identical laminar jets. Colliding the two single water jets, coming out of the nozzles with 50 μm orifices, under an impact angle of 48° leads to double sheet formation, of which the first sheet is 4.6 mm long and 1.0 mm wide. The liquid flatjet operates fully functional under vacuum conditions (<10(-3) mbar), allowing soft-x-ray spectroscopy of aqueous solutions in transmission mode. We analyse the liquid water flatjet thickness under atmospheric pressure using interferomeric or mid-infrared transmission measurements and under vacuum conditions by measuring the absorbance of the O K-edge of water in transmission, and comparing our results with previously published data obtained with standing cells with Si3N4 membrane windows. The thickness of the first liquid sheet is found to vary between 1.4-3 μm, depending on the transverse and longitudinal position in the liquid sheet. We observe that the derived thickness is of similar magnitude under 1 bar and under vacuum conditions. A catcher unit facilitates the recycling of the solutions, allowing measurements on small sample volumes (∼10 ml). We demonstrate the applicability of this approach by presenting measurements on the N K-edge of aqueous NH4 (+). Our results suggest the high potential of using liquid flatjets in steady-state and time-resolved studies in the soft-x-ray regime.