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DDC: 530 × Subject: Thermal expansion ×

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    A novel engineered oxide buffer approach for fully lattice-matched SOI heterostructures
    (College Park, MD : Institute of Physics Publishing, 2010) Giussani, A.; Zaumseil, P.; Seifarth, O.; Storck, P.; Schroeder, T.
    Epitaxial (epi) oxides on silicon can be used to integrate novel device concepts on the canonical Si platform, including functional oxides, e.g. multiferroics, as well as alternative semiconductor approaches. For all these applications, the quality of the oxide heterostructure is a key figure of merit. In this paper, it is shown that, by co-evaporating Y2O3 and Pr2O3 powder materials, perfectly lattice-matched PrYO3(111) epilayers with bixbyite structure can be grown on Si(111) substrates. A high-resolution x-ray diffraction analysis demonstrates that the mixed oxide epi-films are single crystalline and type B oriented. Si epitaxial overgrowth of the PrYO3(111)/Si(111) support system results in flat, continuous and fully lattice-matched epi-Si(111)/PrYO3(111)/Si(111) silicon-on-insulator heterostructures. Raman spectroscopy proves the strain-free nature of the epi-Si films. A Williamson-Hall analysis of the mixed oxide layer highlights the existence of structural defects in the buffer, which can be explained by the thermal expansion coefficients of Si and PrYO3. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.
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    Selective area growth of AlGaN nanopyramid arrays on graphene by metal-organic vapor phase epitaxy
    (Melville, NY : American Inst. of Physics, 2018) Munshi, A. Mazid; Kim, Dong-Chul; Heimdal, Carl Philip; Heilmann, Martin; Christiansen, Silke H.; Vullum, Per Erik; van Helvoort, Antonius T. J.; Weman, Helge
    Wide-bandgap group III-nitride semiconductors are of special interest for applications in ultraviolet light emitting diodes, photodetectors, and lasers. However, epitaxial growth of high-quality III-nitride semiconductors on conventional single-crystalline substrates is challenging due to the lattice mismatch and differences in the thermal expansion coefficients. Recently, it has been shown that graphene, a two-dimensional material, can be used as a substrate for growing high-quality III-V semiconductors via quasi-van der Waals epitaxy and overcome the named challenges. Here, we report selective area growth of AlGaN nanopyramids on hole mask patterned single-layer graphene using metal-organic vapor phase epitaxy. The nanopyramid bases have a hexagonal shape with a very high nucleation yield. After subsequent AlGaN/GaN/AlGaN overgrowth on the six {10 (1) over bar1} semi-polar side facets of the nanopyramids, intense room-temperature cathodoluminescence emission is observed at 365 nm with whispering gallery-like modes. This work opens up a route for achieving III-nitride opto-electronic devices on graphene substrates in the ultraviolet region for future applications.
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    Magnetoelastic coupling and ferromagnetic-type in-gap spin excitations in multiferroic α-Cu2V2O7
    (Bristol : Institute of Physics Publishing, 2018) Wang, L.; Werner, J.; Ottmann, A.; Weis, R.; Abdel-Hafiez, M.; Sannigrahi, J.; Majumdar, S.; Koo, C.; Klingeler, R.
    We investigate magnetoelectric coupling and low-energy magnetic excitations in multiferroic α-Cu2V2O7 by detailed thermal expansion, magnetostriction, specific heat and magnetization measurements in magnetic fields up to 15 T and by high-field/high-frequency electron spin resonance studies. Our data show negative thermal expansion in the temperature range ≤200 K under study. Well-developed anomalies associated with the onset of multiferroic order (canted antiferromagnetism with a significant magnetic moment and ferroelectricity) imply pronounced coupling to the structure. We detect anomalous entropy changes in the temperature regime up to ∼80 K which significantly exceed the spin entropy. Failure of Grüneisen scaling further confirms that several dominant ordering phenomena are concomitantly driving the multiferroic order. By applying external magnetic fields, anomalies in the thermal expansion and in the magnetization are separated. Noteworthy, the data clearly imply the development of a canted magnetic moment at temperatures above the structural anomaly. Low-field magnetostriction supports the scenario of exchange-striction driven multiferroicity. We observe low-energy magnetic excitations well below the antiferromagnetic gap, i.e., a ferromagnetic-type resonance branch associated with the canted magnetic moment arising from Dzyaloshinsii-Moriya (DM) interactions. The anisotropy parameter meV indicates a sizeable ratio of DM- and isotropic magnetic exchange.