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DDC: 530 × Subject: Titanium ×

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Now showing 1 - 4 of 4
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    Strong out-of-plane magnetic anisotropy in ion irradiated anatase TiO2 thin films
    (New York, NY : American Inst. of Physics, 2016) Stiller, M.; Barzola-Quiquia, J.; Esquinazi, P.; Spemann, D.; Meijer, J.; Lorenz, M.; Grundmann, M.
    The temperature and field dependence of the magnetization of epitaxial, undoped anatase TiO2 thin films on SrTiO3 substrates was investigated. Low-energy ion irradiation was used to modify the surface of the films within a few nanometers, yet with high enough energy to produce oxygen and titanium vacancies. The as-prepared thin film shows ferromagnetism which increases after irradiation with low-energy ions. An optimal and clear magnetic anisotropy was observed after the first irradiation, opposite to the expected form anisotropy. Taking into account the experimental parameters, titanium vacancies as di-Frenkel pairs appear to be responsible for the enhanced ferromagnetism and the strong anisotropy observed in our films. The magnetic impurities concentrations was measured by particle-induced X-ray emission with ppm resolution. They are ruled out as a source of the observed ferromagnetism before and after irradiation.
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    Phase formation and high-temperature stability of very thin co-sputtered Ti-Al and multilayered Ti/Al films on thermally oxidized si substrates
    (Basel : MDPI AG, 2020) Seifert, M.; Lattner, E.; Menzel, S.B.; Oswald, S.; Gemming, T.
    Ti-Al thin films with a thickness of 200 nm were prepared either by co-sputtering from elemental Ti and Al targets or as Ti/Al multilayers with 10 and 20 nm individual layer thickness on thermally oxidized Si substrates. Some of the films were covered with a 20-nm-thick SiO2 layer, which was used as an oxidation protection against the ambient atmosphere. The films were annealed at up to 800 °C in high vacuum for 10 h, and the phase formation as well as the film architecture was analyzed by X-ray diffraction, cross section, and transmission electron microscopy, as well as Auger electron and X-ray photoelectron spectroscopy. The results reveal that the co-sputtered films remained amorphous after annealing at 600 °C independent on the presence of the SiO2 cover layer. In contrast to this, the γ-TiAl phase was formed in the multilayer films at this temperature. After annealing at 800 °C, all films were degraded completely despite the presence of the cover layer. In addition, a strong chemical reaction between the Ti and SiO2 of the cover layer and the substrate took place, resulting in the formation of Ti silicide. In the multilayer samples, this reaction already started at 600 °C.
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    Treatment of Candida albicans biofilms with low-temperature plasma induced by dielectric barrier discharge and atmospheric pressure plasma jet
    (College Park, MD : Institute of Physics Publishing, 2010) Koban, I.; Matthes, R.; Hübner, N.-O.; Welk, A.; Meisel, P.; Holtfreter, B.; Sietmann, R.; Kindel, E.; Weltmann, K.-D.; Kramer, A.; Kocher, T.
    Because of some disadvantages of chemical disinfection in dental practice (especially denture cleaning), we investigated the effects of physical methods on Candida albicans biofilms. For this purpose, the antifungal efficacy of three different low-temperature plasma devices (an atmospheric pressure plasma jet and two different dielectric barrier discharges (DBDs)) on Candida albicans biofilms grown on titanium discs in vitro was investigated. As positive treatment controls, we used 0.1% Chlorhexidine digluconate (CHX) and 0.6% sodium hypochlorite (NaOCl). The corresponding gas streams without plasma ignition served as negative treatment controls. The efficacy of the plasma treatment was determined evaluating the number of colony-forming units (CFU) recovered from titanium discs. The plasma treatment reduced the CFU significantly compared to chemical disinfectants. While 10 min CHX or NaOCl exposure led to a CFU log 10 reduction factor of 1.5, the log10 reduction factor of DBD plasma was up to 5. In conclusion, the use of low-temperature plasma is a promising physical alternative to chemical antiseptics for dental practice. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.
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    Heat accumulation during femtosecond laser treatment at high repetition rate – A morphological, chemical and crystallographic characterization of self-organized structures on Ti6Al4V
    (Amsterdam : Elsevier, 2021) Schnell, Georg; Lund, Henrik; Bartling, Stephan; Polley, Christian; Riaz, Abdullah; Senz, Volkmar; Springer, Armin; Seitz, Hermann
    This study presents a detailed characterization of self-organized nano- and microstructures on Ti6Al4V evoked by different scanning strategies and fluences with a 300 fs laser operating at a laser wavelength of 1030 nm. The resulting surface morphology was visualized via field emission scanning electron microscopy (FEG-SEM) images of the surface and cross-sections. X-ray diffraction (XRD)-analysis was performed to analyse changes in crystal structures. The chemical surface composition of the near-surface layer was determined by X-ray photoelectron spectroscopy (XPS). Results show a significant influence of heat accumulation while processing with high laser repetition rates on the formation, crystallinity and chemical composition of self-organized structures depending on the scanning strategy. The ablation with different laser scanning strategies led to varying dynamics of growth-mechanisms of self-organized structures, formation of intermetallic phases (Ti3Al), sub-oxides and oxides (Ti6O, TiO) as well as ions (Ti3+, Ti4+) in surface layer reliant on applied fluence. Furthermore, investigations revealed a heat-affected zone up to several micrometers in non-ablated material. © 2021 The Authors