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- ItemNanoscale spectroscopic imaging of GaAs-AlGaAs quantum well tube nanowires: Correlating luminescence with nanowire size and inner multishell structure(Berlin : De Gruyter, 2019) Prete, P.; Wolf, D.; Marzo, F.; Lovergine, N.The luminescence and inner structure of GaAs-AlGaAs quantum well tube (QWT) nanowires were studied using lowerature cathodoluminescence (CL) spectroscopic imaging, in combination with scanning transmission electron microscopy (STEM) tomography, allowing for the first time a robust correlation between the luminescence properties of these nanowires and their size and inner 3D structure down to the nanoscale. Besides the core luminescence and minor defects-related contributions, each nanowire showed one or more QWT peaks associated with nanowire regions of different diameters. The values of the GaAs shell thickness corresponding to each QWT peak were then determined from the nanowire diameters by employing a multishell growth model upon validation against experimental data (core diameter and GaAs and AlGaAs shell thickness) obtained from the analysis of the 3D reconstructed STEM tomogram of a GaAs-AlGaAs QWT nanowire. We found that QWT peak energies as a function of thus-estimated (3-7 nm) GaAs shell thickness are 40-120 meV below the theoretical values of exciton recombination for uniform QWTs symmetrically wrapped around a central core. However, the analysis of the 3D tomogram further evidenced azimuthal asymmetries as well as (azimuthal and axial) random fluctuations of the GaAs shell thickness, suggesting that the red-shift of QWT emissions is prominently due to carrier localization. The CL mapping of QWT emission intensities along the nanowire axis allowed to directly image the nanoscale localization of the emission, supporting the above picture. Our findings contribute to a deeper understanding of the luminescence-structure relationship in QWT nanowires and will foster their applications as efficient nanolaser sources for future monolithic integration onto silicon.
- ItemElectron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar (112̄ 2) GaN templates(New York : American Institute of Physics, 2015) Niehle, M.; Trampert, A.; Albert, S.; Bengoechea-Encabo, A.; Calleja, E.We present results of scanning transmission electron tomography on GaN/(In,Ga)N/GaN nanocolumns (NCs) that grew uniformly inclined towards the patterned, semi-polar GaN( 11 2 ̄ 2 ) substrate surface by molecular beam epitaxy. For the practical realization of the tomographic experiment, the nanocolumn axis has been aligned parallel to the rotation axis of the electron microscope goniometer. The tomographic reconstruction allows for the determination of the three-dimensional indium distribution inside the nanocolumns. This distribution is strongly interrelated with the nanocolumn morphology and faceting. The (In,Ga)N layer thickness and the indium concentration differ between crystallographically equivalent and non-equivalent facets. The largest thickness and the highest indium concentration are found at the nanocolumn apex parallel to the basal planes.
- ItemTriggered polarization-entangled photon pairs from a single quantum dot up to 30 K(College Park, MD : Institute of Physics Publishing, 2007) Hafenbrak, R.; Ulrich, S.M.; Michler, P.; Wang, L.; Rastelli, A.; Schmidt, O.G.The radiative biexciton-exciton decay in a semiconductor quantum dot (QD) has the potential of being a source of triggered polarization-entangled photon pairs. However, in most cases the anisotropy-induced exciton fine structure splitting destroys this entanglement. Here, we present measurements on improved QD structures, providing both significantly reduced inhomogeneous emission linewidths and near-zero fine structure splittings. A high-resolution detection technique is introduced which allows us to accurately determine the fine structure in the photoluminescence emission and therefore select appropriate QDs for quantum state tomography. We were able to verify the conditions of entangled or classically correlated photon pairs in full consistence with observed fine structure properties. Furthermore, we demonstrate reliable polarization-entanglement for elevated temperatures up to 30 K. The fidelity of the maximally entangled state decreases only a little from 72% at 4 K to 68% at 30 K. This is especially encouraging for future implementations in practical devices. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.
- ItemLaboratory setup for extreme ultraviolet coherence tomography driven by a high-harmonic source(Melville, NY : American Inst. of Physics, 2019) Nathanael, Jan; Wünsche, Martin; Fuchs, Silvio; Weber, Thomas; Abel, Johann J.; Reinhard, Julius; Wiesner, Felix; Hübner, Uwe; Skruszewicz, Slawomir J.; Paulus, Gerhard G.; Rödel, ChristianWe present a laboratory beamline dedicated to nanoscale subsurface imaging using extreme ultraviolet coherence tomography (XCT). In this setup, broad-bandwidth extreme ultraviolet (XUV) radiation is generated by a laser-driven high-harmonic source. The beamline is able to handle a spectral range of 30-130 eV and a beam divergence of 10 mrad (full width at half maximum). The XUV radiation is focused on the sample under investigation, and the broadband reflectivity is measured using an XUV spectrometer. For the given spectral window, the XCT beamline is particularly suited to investigate silicon-based nanostructured samples. Cross-sectional imaging of layered nanometer-scale samples can be routinely performed using the laboratory-scale XCT beamline. A depth resolution of 16 nm has been achieved using the spectral range of 36-98 eV which represents a 33% increase in resolution due to the broader spectral range compared to previous work. © 2019 Author(s).