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DDC: 530 × Subject: Van der Waals forces ×

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    Observation of orbital order in the van der Waals material 1T−TiSe2
    (College Park, MD : APS, 2022) Peng, Yingying; Guo, Xuefei; Xiao, Qian; Li, Qizhi; Strempfer, Jörg; Choi, Yongseong; Yan, Dong; Luo, Huixia; Huang, Yuqing; Jia, Shuang; Janson, Oleg; Abbamonte, Peter; van den Brink, Jeroen; van Wezel, Jasper
    Besides magnetic and charge order, regular arrangements of orbital occupation constitute a fundamental order parameter of condensed matter physics. Even though orbital order is difficult to identify directly in experiments, its presence was firmly established in a number of strongly correlated, three-dimensional Mott insulators. Here, reporting resonant x-ray-scattering experiments on the layered van der Waals compound 1T-TiSe2, we establish that the known charge density wave in this weakly correlated, quasi-two-dimensional material corresponds to an orbital ordered phase. Our experimental scattering results are consistent with first-principles calculations that bring to the fore a generic mechanism of close interplay between charge redistribution, lattice displacements, and orbital order. It demonstrates the essential role that orbital degrees of freedom play in TiSe2, and their importance throughout the family of correlated van der Waals materials.
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    Selective area growth of AlGaN nanopyramid arrays on graphene by metal-organic vapor phase epitaxy
    (Melville, NY : American Inst. of Physics, 2018) Munshi, A. Mazid; Kim, Dong-Chul; Heimdal, Carl Philip; Heilmann, Martin; Christiansen, Silke H.; Vullum, Per Erik; van Helvoort, Antonius T. J.; Weman, Helge
    Wide-bandgap group III-nitride semiconductors are of special interest for applications in ultraviolet light emitting diodes, photodetectors, and lasers. However, epitaxial growth of high-quality III-nitride semiconductors on conventional single-crystalline substrates is challenging due to the lattice mismatch and differences in the thermal expansion coefficients. Recently, it has been shown that graphene, a two-dimensional material, can be used as a substrate for growing high-quality III-V semiconductors via quasi-van der Waals epitaxy and overcome the named challenges. Here, we report selective area growth of AlGaN nanopyramids on hole mask patterned single-layer graphene using metal-organic vapor phase epitaxy. The nanopyramid bases have a hexagonal shape with a very high nucleation yield. After subsequent AlGaN/GaN/AlGaN overgrowth on the six {10 (1) over bar1} semi-polar side facets of the nanopyramids, intense room-temperature cathodoluminescence emission is observed at 365 nm with whispering gallery-like modes. This work opens up a route for achieving III-nitride opto-electronic devices on graphene substrates in the ultraviolet region for future applications.