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- ItemOn the relationship between SiF4plasma species and sample properties in ultra low-k etching processes(New York, NY : American Inst. of Physics, 2020) Haase, Micha; Melzer, Marcel; Lang, Norbert; Ecke, Ramona; Zimmermann, Sven; van Helden, Jean-Pierre H.; Schulz, Stefan E.The temporal behavior of the molecular etching product SiF4 in fluorocarbon-based plasmas used for the dry etching of ultra low-k (ULK) materials has been brought into connection with the polymer deposition on the surface during plasma treatment within the scope of this work. For this purpose, time-resolved measurements of the density of SiF4 have been performed by quantum cascade laser absorption spectroscopy. A quantification of the non-linear time dependence was achieved by its characterization via a time constant of the decreasing SiF4 density over the process time. The time constant predicts how fast the stationary SiF4 density is reached. The higher the time constant is, the thicker the polymer film on top of the treated ultra low-k surface. A correlation between the time constant and the ULK damage was also found. ULK damage and polymer deposition were proven by Variable Angle Spectroscopic Ellipsometry and X-ray Photoelectron Spectroscopy. In summary, the observed decay of the etching product concentration over process time is caused by the suppressed desorption of the SiF4 molecules due to a more dominant adsorption of polymers. © 2020 Author(s).
- ItemPhase formation and high-temperature stability of very thin co-sputtered Ti-Al and multilayered Ti/Al films on thermally oxidized si substrates(Basel : MDPI AG, 2020) Seifert, M.; Lattner, E.; Menzel, S.B.; Oswald, S.; Gemming, T.Ti-Al thin films with a thickness of 200 nm were prepared either by co-sputtering from elemental Ti and Al targets or as Ti/Al multilayers with 10 and 20 nm individual layer thickness on thermally oxidized Si substrates. Some of the films were covered with a 20-nm-thick SiO2 layer, which was used as an oxidation protection against the ambient atmosphere. The films were annealed at up to 800 °C in high vacuum for 10 h, and the phase formation as well as the film architecture was analyzed by X-ray diffraction, cross section, and transmission electron microscopy, as well as Auger electron and X-ray photoelectron spectroscopy. The results reveal that the co-sputtered films remained amorphous after annealing at 600 °C independent on the presence of the SiO2 cover layer. In contrast to this, the γ-TiAl phase was formed in the multilayer films at this temperature. After annealing at 800 °C, all films were degraded completely despite the presence of the cover layer. In addition, a strong chemical reaction between the Ti and SiO2 of the cover layer and the substrate took place, resulting in the formation of Ti silicide. In the multilayer samples, this reaction already started at 600 °C.
- ItemTiNb2O7 and VNB9O25 of ReO3 type in hybrid Mg−Li batteries: Electrochemical and interfacial insights(Washington, DC : American Chemical Society, 2020) Maletti, Sebastian; Herzog-Arbeitman, Abraham; Oswald, Steffen; Senyshyn, Anatoliy; Giebeler, Lars; Mikhailova, DariaAs one of the beyond-lithium battery concepts, hybrid metal-ion batteries have aroused growing interest. Here, TiNb2O7 (TNO) and VNb9O25 (VNO) materials were prepared using a high-temperature solid-state synthesis and, for the first time, comprehensively examined in hybrid Mg−Li batteries. Both materials adopt ReO3-related structures differing in the interconnection of oxygen polyhedra and the resulting guest ion diffusion paths. We show applicability of the compounds in hybrid cells providing capacities comparable to those reached in Li-ion batteries (LIBs) at room temperature (220 mAh g−1 for TNO and 150 mAh g−1 for VNO, both at 0.1 C), their operability in the temperature range between −10 and 60 °C, and even better capacity retention than in pure LIBs, rendering this hybrid technology superior for long-term application. Post mortem X-ray photoelectron spectroscopy reveals a cathode−electrolyte interface as a key ingredient for providing excellent electrochemical stability of the hybrid battery. A significant contribution of the intercalation pseudocapacitance to charge storage was observed for both materials in Li- and Mg−Li batteries. However, the pseudocapacitive part is higher for TNO than for VNO, which correlates with structural distinctions, providing better accessibility of diffusion pathways for guest cations in TNO and, as a consequence, a higher ionic transport within the crystal structure. © 2020 American Chemical Society
- ItemTowards time resolved core level photoelectron spectroscopy with femtosecond x-ray free-electron lasers(College Park, MD : Institute of Physics Publishing, 2008) Pietzsch, A.; Föhlisch, A.; Beye, M.; Deppe, M.; Hennies, F.; Nagasono, M.; Suljotil, E.; Wurth, W.; Gahl, C.; Dörich, K.; Melnikov, A.We have performed core level photoelectron spectroscopy on a W(110) single crystal with femtosecond XUV pulses from the free-electron laser at Hamburg (FLASH). We demonstrate experimentally and through theoretical modelling that for a suitable range of photon fluences per pulse, time-resolved photoemission experiments on solid surfaces are possible. Using FLASH pulses in combination with a synchronized optical laser, we have performed femtosecond time-resolved core-level photoelectron spectroscopy and observed sideband formation on the W 4f lines indicating a cross correlation between femtosecond optical and XUV pulses. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.
- ItemNanostructures on fused silica surfaces produced by ion beam sputtering with Al co-deposition(Heidelberg [u.a.] : Springer, 2017) Liu, Ying; Hirsch, Dietmar; Fechner, Renate; Hong, Yilin; Fu, Shaojun; Frost, Frank; Rauschenbach, BerndThe ion beam sputtering (IBS) of smooth mono-elemental Si with impurity co-deposition is extended to a pre-rippled binary compound surface of fused silica (SiO2). The dependence of the rms roughness and the deposited amount of Al on the distance from the Al source under Ar+ IBS with Al co-deposition was investigated on smooth SiO2, pre-rippled SiO2, and smooth Si surfaces, using atomic force microscopy and X-ray photoelectron spectroscopy. Although the amounts of Al deposited on these three surfaces all decreased with increasing distance from the Al target, the morphology and rms roughness of the smooth Si surface did not demonstrate a strong distance dependence. In contrast to smooth Si, the rms roughness of both the smooth and pre-rippled SiO2 surfaces exhibited a similar distance evolution trend of increasing, decreasing, and final stabilization at the distance where the results were similar to those obtained without Al co-deposition. However, the pre-rippled SiO2 surfaces showed a stronger modulation of rms roughness than the smooth surfaces. At the incidence angles of 60° and 70°, dot-decorated ripples and roof-tiles were formed on the smooth SiO2 surfaces, respectively, whereas nanostructures of closely aligned grains and blazed facets were generated on the pre-rippled SiO2, respectively. The combination of impurity co-deposition with pre-rippled surfaces was found to facilitate the formation of novel types of nanostructures and morphological growth. The initial ripples act as a template to guide the preferential deposition of Al on the tops of the ripples or the ripple sides facing the Al wedge, but not in the valleys between the ripples, leading to 2D grains and quasi-blazed grating, which offer significant promise in optical applications. The rms roughness enhancement is attributed not to AlSi, but to AlOxFy compounds originating mainly from the Al source.