Filters

2013 - 201922020 - 20211

More filters

2020 - 20223
Reset filters

Settings

DDC: 530 × Subject: luminescence ×

Search Results

Now showing 1 - 3 of 3
  • Thumbnail Image
    Item
    Current Status of Carbon‐Related Defect Luminescence in GaN
    (Weinheim : Wiley-VCH, 2021) Zimmermann, Friederike; Beyer, Jan; Röder, Christian; Beyer, Franziska C.; Richter, Eberhard; Irmscher, Klaus; Heitmann, Johannes
    Highly insulating layers are a prerequisite for gallium nitride (GaN)-based power electronic devices. For this purpose, carbon doping is one of the currently pursued approaches. However, its impact on the optical and electrical properties of GaN has been widely debated in the scientific community. For further improvement of device performance, a better understanding of the role of related defects is essential. To study optically active point defects, photoluminescence is one of the most frequently used experimental characterization techniques. Herein, the main recent advances in the attribution of carbon-related photoluminescence bands are reviewed, which were enabled by the interplay of a refinement of growth and characterization techniques and state-of-the-art first-principles calculations developed during the last decade. The predicted electronic structures of isolated carbon defects and selected carbon-impurity complexes are compared to experimental results. Taking into account both of these, a comprehensive overview on the present state of interpretation of carbon-related broad luminescence bands in bulk GaN is presented.
  • Thumbnail Image
    Item
    Solid-state ensemble of highly entangled photon sources at rubidium atomic transitions
    (London : Nature Publishing Group, 2017) Keil, R.; Zopf, M.; Chen, Y.; Höfer, B.; Zhang, J.; Ding, F.; Schmidt, O.G.
    Semiconductor InAs/GaAs quantum dots grown by the Stranski-Krastanov method are among the leading candidates for the deterministic generation of polarization-entangled photon pairs. Despite remarkable progress in the past 20 years, many challenges still remain for this material, such as the extremely low yield, the low degree of entanglement and the large wavelength distribution. Here, we show that with an emerging family of GaAs/AlGaAs quantum dots grown by droplet etching and nanohole infilling, it is possible to obtain a large ensemble of polarization-entangled photon emitters on a wafer without any post-growth tuning. Under pulsed resonant two-photon excitation, all measured quantum dots emit single pairs of entangled photons with ultra-high purity, high degree of entanglement and ultra-narrow wavelength distribution at rubidium transitions. Therefore, this material system is an attractive candidate for the realization of a solid-state quantum repeater - among many other key enabling quantum photonic elements.
  • Thumbnail Image
    Item
    Photophysics of polymeric carbon nitride: An optical quasimonomer
    (College Park : American Institute of Physics Inc., 2013) Merschjann, C.; Tyborski, T.; Orthmann, S.; Yang, F.; Schwarzburg, K.; Lublow, M.; Lux-Steiner, M.-C.; Schedel-Niedrig, T.
    A comprehensive investigation of the luminescent properties of carbon nitride polymers, based on tri-s-triazine units, has been conducted. Steady-state temperature- and excitation-power-dependent as well as time-resolved measurements with near-UV excitation (λ=325 nm and 405 nm) yield strong photoluminescence, covering the visible spectrum. The spectral, thermal, and temporal features of the photoluminescence can be satisfactorily described by the excitation and radiative recombination of molecular excitons, localized at single tri-s-triazine units. The discussed model is in accordance with the recently reported absorption features of carbon nitride polymers. Thus, from the point of view of optical spectroscopy, the material effectively behaves as a monomer.