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DDC: 530 × Subject: relaxation ×

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    Heteroepitaxy of group IV materials for future device application
    (Bristol : IOP Publ., 2023) Yamamoto, Yuji; Wen, Wei-Chen; Tillack, Bernd
    Heteroepitxy of group IV materials (Si, SiGe, and Ge) has great potential for boosting Si-based novel device performance because of the possibility for strain, band gap/Fermi-level engineering, and applying emerging artificial materials such as a superlattice (SL) and nanodots. In order to control group IV heteroepitaxy processes, strain, interface, and surface energies are very essential parameters. They affect dislocation formation, interface steepness, reflow of deposited layers, and also surface reaction itself during the growth. Therefore, process control and crystallinity management of SiGe heteroepitaxy are difficult especially in the case of high Ge concentrations. In this paper, we review our results of abrupt SiGe/Si interface fabrication by introducing C-delta layers and the influence of strain on the surface reaction of SiGe. Three-dimensional self-ordered SiGe and Ge nanodot fabrication by proactively using strain and surface energies by depositing SiGe/Si and Ge/SiGe SL are also reviewed.
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    Nematic fluctuations in iron-oxychalcogenide Mott insulators
    (London : Nature Publishing Group, 2021) Freelon, B.; Sarkar, R.; Kamusella, S.; Brückner, F.; Grinenko, V.; Acharya, Swagata; Laad, Mukul; Craco, Luis; Yamani, Zahra; Flacau, Roxana; Swainson, Ian; Frandsen, Benjamin; Birgeneau, Robert; Liu, Yuhao; Karki, Bhupendra; Alfailakawi, Alaa; Neuefeind, Joerg C.; Everett, Michelle; Wang, Hangdong; Xu, Binjie; Fang, Minghu; Klauss, H.-H.
    Nematic fluctuations occur in a wide range physical systems from biological molecules to cuprates and iron pnictide high-Tc superconductors. It is unclear whether nematicity in pnictides arises from electronic spin or orbital degrees of freedom. We studied the iron-based Mott insulators La2O2Fe2OM2M = (S, Se), which are structurally similar to pnictides. Nuclear magnetic resonance revealed a critical slowing down of nematic fluctuations and complementary Mössbauerr spectroscopy data showed a change of electrical field gradient. The neutron pair distribution function technique detected local C2 fluctuations while neutron diffraction indicates that global C4 symmetry is preserved. A geometrically frustrated Heisenberg model with biquadratic and single-ion anisotropic terms provides the interpretation of the low temperature magnetic fluctuations. The nematicity is not due to spontaneous orbital order, instead it is linked to geometrically frustrated magnetism based on orbital selectivity. This study highlights the interplay between orbital order and spin fluctuations in nematicity.