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DDC: 530 × Subject: transition element ×

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    Strain-stabilized superconductivity
    ([London] : Nature Publishing Group UK, 2021) Ruf, J.P.; Paik, H.; Schreiber, N.J.; Nair, H.P.; Miao, L.; Kawasaki, J.K.; Nelson, J.N.; Faeth, B.D.; Lee, Y.; Goodge, B.H.; Pamuk, B.; Fennie, C.J.; Kourkoutis, L.F.; Schlom, D.G.; Shen, K.M.
    Superconductivity is among the most fascinating and well-studied quantum states of matter. Despite over 100 years of research, a detailed understanding of how features of the normal-state electronic structure determine superconducting properties has remained elusive. For instance, the ability to deterministically enhance the superconducting transition temperature by design, rather than by serendipity, has been a long sought-after goal in condensed matter physics and materials science, but achieving this objective may require new tools, techniques and approaches. Here, we report the transmutation of a normal metal into a superconductor through the application of epitaxial strain. We demonstrate that synthesizing RuO2 thin films on (110)-oriented TiO2 substrates enhances the density of states near the Fermi level, which stabilizes superconductivity under strain, and suggests that a promising strategy to create new transition-metal superconductors is to apply judiciously chosen anisotropic strains that redistribute carriers within the low-energy manifold of d orbitals.
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    Symmetry regimes for circular photocurrents in monolayer MoSe2
    (London : Nature Publishing Group, 2018) Quereda, J.; Ghiasi, T.S.; You, J.-S.; van den Brink, J.; van Wees, B.J.; van der Wal, C.H.
    In monolayer transition metal dichalcogenides helicity-dependent charge and spin photocurrents can emerge, even without applying any electrical bias, due to circular photogalvanic and photon drag effects. Exploiting such circular photocurrents (CPCs) in devices, however, requires better understanding of their behavior and physical origin. Here, we present symmetry, spectral, and electrical characteristics of CPC from excitonic interband transitions in a MoSe2 monolayer. The dependence on bias and gate voltages reveals two different CPC contributions, dominant at different voltages and with different dependence on illumination wavelength and incidence angles. We theoretically analyze symmetry requirements for effects that can yield CPC and compare these with the observed angular dependence and symmetries that occur for our device geometry. This reveals that the observed CPC effects require a reduced device symmetry, and that effects due to Berry curvature of the electronic states do not give a significant contribution.