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- ItemThe Electronic Conductivity of Single Crystalline Ga-Stabilized Cubic Li7La3Zr2O12: A Technologically Relevant Parameter for All-Solid-State Batteries(Weinheim : Wiley-VCH, 2020) Philipp, Martin; Gadermaier, Bernhard; Posch, Patrick; Hanzu, Ilie; Ganschow, Steffen; Meven, Martin; Rettenwander, Daniel; Redhammer, Günther J.; Wilkening, H. Martin R.The next-generation of all-solid-state lithium batteries need ceramic electrolytes with very high ionic conductivities. At the same time a negligible electronic conductivity σeon is required to eliminate self-discharge in such systems. A non-negligible electronic conductivity may also promote the unintentional formation of Li dendrites, being currently one of the key issues hindering the development of long-lasting all-solid-state batteries. This interplay is suggested recently for garnet-type Li7La3Zr2O12 (LLZO). It is, however, well known that the overall macroscopic electronic conductivity may be governed by a range of extrinsic factors such as impurities, chemical inhomogeneities, grain boundaries, morphology, and size effects. Here, advantage of Czochralski-grown single crystals, which offer the unique opportunity to evaluate intrinsic properties of a chemically homogeneous matrix, is taken to measure the electronic conductivity σeon. Via long-time, high-precision potentiostatic polarization experiments an upper limit of σeon in the order of 5 × 10−10 S cm−1 (293 K) is estimated. This value is by six orders of magnitude lower than the corresponding total conductivity σtotal = 10−3 S cm−1 of Ga-LLZO. Thus, it is concluded that the high values of σeon recently reported for similar systems do not necessarily mirror intragrain bulk properties of chemically homogenous systems but may originate from chemically inhomogeneous interfacial areas. © 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- ItemREScO3 Substrates—Purveyors of Strain Engineering(Weinheim : Wiley-VCH, 2019) Klimm, Detlef; Guguschev, Christo; Ganschow, Steffen; Bickermann, Matthias; Schlom, Darrell G.The thermodynamic and crystallographic background for the development of substrate crystals that are suitable for the epitaxial deposition of biaxially strained functional perovskite layers is reviewed. In such strained layers the elastic energy delivers an additional contribution to the Gibbs free energy, which allows the tuning of physical properties and phase transition temperatures to desired values. For some oxide systems metastable phases can even be accessed. Rare-earth scandates, REScO3, are well suited as substrate crystals because they combine mechanical and chemical stability in the epitaxy process with an adjustable range of pseudo-cubic lattice parameters in the 3.95 to 4.02 Å range. To further tune the lattice parameters, chemical substitution for the RE or Sc is possible. © 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- ItemNumerical Modeling of Heat Transfer and Thermal Stress at the Czochralski Growth of Neodymium Scandate Single Crystals(Weinheim : Wiley-VCH, 2021) Böttcher, Klaus; Miller, Wolfram; Ganschow, SteffenThe Czochralski growth of NdScO3 single crystals along the [110]-direction is numerically analyzed with the focus on the influence of the optical thickness on the shape of the crystal–melt interface and on the generation of thermal stresses. Due to lack of data, the optical thickness (i.e., the absorption coefficient) is varied over the entire interval between optically thin and thick. While the thermal calculation in the entire furnace is treated as axisymmetric, the stress calculation of the crystal is done three-dimensionally in order to meet the spatial anisotropy of thermal expansion and elastic coefficients. The numerically obtained values of the deflection of the crystal/melt interface meet the experimental ones for absorption coefficients in the range between 40 and 200 m−1. The maximum values of the von Mises stress appear for the case of absorption coefficient between 20 and 40 m−1. Applying absorption coefficients in the range between 3 and 100 m−1 leads to local peaks of high temperature in the shoulder region and the tail region near the end of the cylindrical part.
- ItemLumped Parameter Model for Silicon Crystal Growth from Granulate Crucible(Weinheim : Wiley-VCH, 2020) Lorenz-Meyer, M. Nicolai L.; Menzel, Robert; Dadzis, Kaspars; Nikiforova, Angelina; Riemann, HelgeIn the present paper, a lumped parameter model for the novel Silicon Granulate Crucible (SiGC) method is proposed, which is the basis for a future model-based control system for the process. The model is analytically deduced based on the hydromechanical, geometrical, and thermal conditions of the process. Experiments are conducted to identify unknown model parameters and to validate the model. The physical consistency of the model is verified using simulation studies and a prediction error of below 2% is reached. © 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- ItemGrowth and Properties of Intentionally Carbon-Doped GaN Layers(Weinheim : Wiley-VCH, 2019) Richter, Eberhard; Beyer, Franziska C.; Zimmermann, Friederike; Gärtner, Günter; Irmscher, Klaus; Gamov, Ivan; Heitmann, Johannes; Weyers, Markus; Tränkle, GüntherCarbon-doping of GaN layers with thickness in the mm-range is performed by hydride vapor phase epitaxy. Characterization by optical and electrical measurements reveals semi-insulating behavior with a maximum of specific resistivity of 2 × 1010 Ω cm at room temperature found for a carbon concentration of 8.8 × 1018 cm−3. For higher carbon levels up to 3.5 × 1019 cm−3, a slight increase of the conductivity is observed and related to self-compensation and passivation of the acceptor. The acceptor can be identified as CN with an electrical activation energy of 0.94 eV and partial passivation by interstitial hydrogen. In addition, two differently oriented tri-carbon defects, CN-a-CGa-a-CN and CN-a-CGa-c-CN, are identified which probably compensate about two-thirds of the carbon which is incorporated in excess of 2 × 1018 cm−3. © 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim