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    Selective electrodeposition of indium microstructures on silicon and their conversion into InAs and InSb semiconductors
    (New York, NY [u.a.] : Springer, 2023) Hnida-Gut, Katarzyna E.; Sousa, Marilyne; Tiwari, Preksha; Schmid, Heinz
    Abstract: The idea of benefitting from the properties of III-V semiconductors and silicon on the same substrate has been occupying the minds of scientists for several years. Although the principle of III-V integration on a silicon-based platform is simple, it is often challenging to perform due to demanding requirements for sample preparation rising from a mismatch in physical properties between those semiconductor groups (e.g. different lattice constants and thermal expansion coefficients), high cost of device-grade materials formation and their post-processing. In this paper, we demonstrate the deposition of group-III metal and III-V semiconductors in microfabricated template structures on silicon as a strategy for heterogeneous device integration on Si. The metal (indium) is selectively electrodeposited in a 2-electrode galvanostatic configuration with the working electrode (WE) located in each template, resulting in well-defined In structures of high purity. The semiconductors InAs and InSb are obtained by vapour phase diffusion of the corresponding group-V element (As, Sb) into the liquified In confined in the template. We discuss in detail the morphological and structural characterization of the synthesized In, InAs and InSb crystals as well as chemical analysis through scanning electron microscopy (SEM), scanning transmission electron microscopy (TEM/STEM), and energy-dispersive X-ray spectroscopy (EDX). The proposed integration path combines the advantage of the mature top-down lithography technology to define device geometries and employs economic electrodeposition (ED) and vapour phase processes to directly integrate difficult-to-process materials on a silicon platform. Graphical abstract: [Figure not available: see fulltext.].
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    Electrodeposition of Fe70Pd30 nanowires from a complexed ammonium-sulfosalicylic electrolyte with high stability
    (Amsterdam : Elsevier, 2010) Haehnel, V.; Fähler, S.; Schultz, L.; Schlörb, H.
    A highly stable plating bath for the electrodeposition of Fe-Pd nanowires into nanoporous alumina templates has been developed. Complexing of both metal ions and exchanging Fe2+ by Fe3+ avoid chemical reduction of Pd ions and, therefore, undesirable deposition. By using a pulse potential mode and appropriate adjustment of deposition potentials homogeneously filled templates without surface deposits and nanowires close to the desired composition of Fe70Pd30 have been achieved. These alloy nanowires represent a key step towards nanoactuators based on magnetic shape memory alloys. © 2010 Elsevier B.V. All rights reserved.
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    Influence of Polycation Composition on Electrochemical Film Formation
    (Basel : MDPI, 2018) Schneider, Sabine; Janssen, Corinna; Klindtworth, Elisabeth; Mergel, Olga; Möller, Martin; Plamper, Felix
    The effect of polyelectrolyte composition on the electrodeposition onto platinum is investigated using a counterion switching approach. Film formation of preformed polyelectrolytes is triggered by oxidation of hexacyanoferrates(II) (ferrocyanide), leading to polyelectrolyte complexes, which are physically crosslinked by hexacyanoferrate(III) (ferricyanide) ions due to preferential ferricyanide/polycation interactions. In this study, the electrodeposition of three different linear polyelectrolytes, namely quaternized poly[2-(dimethylamino)ethyl methacrylate] (i.e., poly{[2-(methacryloyloxy)ethyl]trimethylammonium chloride}; PMOTAC), quaternized poly[2-(dimethylamino)ethyl acrylate] (i.e., poly{[2-(acryloyloxy)ethyl]trimethylammonium chloride}; POTAC), quaternized poly[N-(3-dimethylaminopropyl)methacrylamide] (i.e., poly{[3-(methacrylamido)propyl]trimethylammonium chloride}; PMAPTAC) and different statistical copolymers of these polyelectrolytes with N-(3-aminopropyl)methacrylamide (APMA), are studied. Hydrodynamic voltammetry utilizing a rotating ring disk electrode (RRDE) shows the highest deposition efficiency DE for PMOTAC over PMAPTAC and over POTAC. Increasing incorporation of APMA weakens the preferred interaction of the quaternized units with the hexacyanoferrate(III) ions. At a sufficient APMA content, electrodeposition can thus be prevented. Additional electrochemical quartz crystal microbalance measurements reveal the formation of rigid polyelectrolyte films being highly crosslinked by the hexacyanoferrate(III) ions. Results indicate a different degree of water incorporation into these polyelectrolyte films. Hence, by adjusting the polycation composition, film properties can be tuned, while different chemistries can be incorporated into these electrodeposited thin hydrogel films.