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    Phase equilibria in the Gd–Cr–Ge system at 1070 K
    (Ivano-Frankivsʹk : Fizyko-chimičnyj instytut DVNZ "Prykarpatsʹkyj nacionalʹnyj universytet imeni Vasylja Stefanyka", 2021) Konyk, M.; Romaka, L.; Stadnyk, Yu.; Romaka, V.V.; Pashkevych, V.
    The isothermal section of the phase diagram of the Gd–Cr–Ge ternary system was constructed at 1070 K over the whole concentration range using X-ray diffractometry, metallography and electron microprobe (EPM) analysis. Three ternary compounds are realized in the Gd–Cr–Ge system at the temperature of annealing: Gd117Cr52Ge112 (Tb117Fe52Ge112 structure type,  space group Fm-3m, Pearson symbol cF1124, a = 2.8971(6) nm), GdCr6Ge6 (SmMn6Sn6 structure type, space group P6/mmm, Pearson symbol hP16, a = 0.51797(2), c = 0.82901(4) nm) and GdCr1-хGe2 (CeNiSi2 structure type, space group Cmcm, Pearson symbol oS16, a = 0.41569(1)-0.41593(8), b = 1.60895(6)-1.60738(3), c = 0.40318(1)-0.40305(8) nm). For the GdCr1-xGe2 compound the homogeneity range was determined (x=0.73 – 0,69).
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    Stabilization of the ζ-Cu10Sn3 Phase by Ni at Soldering-Relevant Temperatures
    (Heidelberg : Springer Verlag, 2020) Wieser, C.; Hügel, W.; Martin, S.; Freudenberger, J.; Leineweber, A.
    A current issue in electrical engineering is the enhancement of the quality of solder joints. This is mainly associated with the ongoing electrification of transportation as well as the miniaturization of (power) electronics. For the reliability of solder joints, intermetallic phases in the microstructure of the solder are of great importance. The formation of the intermetallic phases in the Cu-Sn solder system was investigated for different annealing temperatures between 472 K and 623 K using pure Cu as well as Cu-1at.%Ni and Cu-3at.%Ni substrate materials. These are relevant for lead frame materials in electronic components. The Cu and Cu-Ni alloys were in contact to galvanic plated Sn. This work is focused on the unexpected formation of the hexagonal ζ-(Cu,Ni)10Sn3 phase at annealing temperatures of 523–623 K, which is far below the eutectoid decomposition temperature of binary ζ-Cu10Sn3 of about 855 K. By using scanning electron microscopy, energy dispersive X-ray spectroscopy, electron backscatter diffraction and X-ray diffraction the presence of the ζ phase was confirmed and its structural properties were analyzed.