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- ItemUndiscovered Potential: Ge Catalysts for Lactide Polymerization(Weinheim : Wiley-VCH, 2020) Rittinghaus, Ruth D.; Tremmel, Jakub; Růžička, Ales; Conrads, Christian; Albrecht, Pascal; Hoffmann, Alexander; Ksiazkiewicz, Agnieszka N.; Pich, Andrij; Jambor, Roman; Herres-Pawlis, SonjaPolylactide (PLA) is a high potential bioplastic that can replace oil-based plastics in a number of applications. To date, in spite of its known toxicity, a tin catalyst is used on industrial scale which should be replaced by a benign catalyst in the long run. Germanium is known to be unharmful while having similar properties as tin. Only few germylene catalysts are known so far and none has shown the potential for industrial application. We herein present Ge complexes in combination with zinc and copper, which show amazingly high polymerization activities for lactide in bulk at 150 °C. By systematical variation of the complex structure, proven by single-crystal XRD and DFT calculations, structure–property relationships are found regarding the polymerization activity. Even in the presence of zinc and copper, germanium acts as the active site for polymerizing probably through the coordination–insertion mechanism to high molar mass polymers. © 2019 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA.
- ItemElectronic materials with a wide band gap: Recent developments(Chester : International Union of Crystallography, 2014) Klimm, D.The development of semiconductor electronics is reviewed briefly, beginning with the development of germanium devices (band gap E g = 0.66 eV) after World War II. A tendency towards alternative materials with wider band gaps quickly became apparent, starting with silicon (E g = 1.12 eV). This improved the signal-to-noise ratio for classical electronic applications. Both semiconductors have a tetrahedral coordination, and by isoelectronic alternative replacement of Ge or Si with carbon or various anions and cations, other semiconductors with wider E g were obtained. These are transparent to visible light and belong to the group of wide band gap semiconductors. Nowadays, some nitrides, especially GaN and AlN, are the most important materials for optical emission in the ultraviolet and blue regions. Oxide crystals, such as ZnO and β-Ga2O3, offer similarly good electronic properties but still suffer from significant difficulties in obtaining stable and technologically adequate p-type conductivity.
- ItemShallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology(Weinheim : Wiley-VCH, 2019) Sammak, Amir; Sabbagh, Diego; Hendrickx, Nico W.; Lodari, Mario; Wuetz, Brian Paquelet; Tosato, Alberto; Yeoh, LaReine; Bollani, Monica; Virgilio, Michele; Schubert, Markus Andreas; Zaumseil, Peter; Capellini, Giovanni; Veldhorst, Menno; Scappucci, GiordanoBuried-channel semiconductor heterostructures are an archetype material platform for the fabrication of gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface; however, nearby surface states degrade the electrical properties of the starting material. Here, a 2D hole gas of high mobility (5 × 10 5 cm 2 V −1 s −1 ) is demonstrated in a very shallow strained germanium (Ge) channel, which is located only 22 nm below the surface. The top-gate of a dopant-less field effect transistor controls the channel carrier density confined in an undoped Ge/SiGe heterostructure with reduced background contamination, sharp interfaces, and high uniformity. The high mobility leads to mean free paths ≈ 6 µm, setting new benchmarks for holes in shallow field effect transistors. The high mobility, along with a percolation density of 1.2 × 10 11 cm −2 , light effective mass (0.09m e ), and high effective g-factor (up to 9.2) highlight the potential of undoped Ge/SiGe as a low-disorder material platform for hybrid quantum technologies. © 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim