Filters

2014 - 20202

More filters

2020 - 20212
Reset filters

Settings

DDC: 540 × Subject: semiconductors ×

Search Results

Now showing 1 - 2 of 2
  • Thumbnail Image
    Item
    Highly Crystalline and Semiconducting Imine-Based Two-Dimensional Polymers Enabled by Interfacial Synthesis
    (Weinheim : Wiley-VCH, 2020) Sahabudeen, Hafeesudeen; Qi, Haoyuan; Ballabio, Marco; Položij, Miroslav; Olthof, Selina; Shivhare, Rishi; Jing, Yu; Park, SangWook; Liu, Kejun; Zhang, Tao; Ma, Ji; Rellinghaus, Bernd; Mannsfeld, Stefan; Heine, Thomas; Bonn, Mischa; Cánovas, Enrique; Zheng, Zhikun; Kaiser, Ute; Dong, Renhao; Feng, Xinliang
    Single-layer and multi-layer 2D polyimine films have been achieved through interfacial synthesis methods. However, it remains a great challenge to achieve the maximum degree of crystallinity in the 2D polyimines, which largely limits the long-range transport properties. Here we employ a surfactant-monolayer-assisted interfacial synthesis (SMAIS) method for the successful preparation of porphyrin and triazine containing polyimine-based 2D polymer (PI-2DP) films with square and hexagonal lattices, respectively. The synthetic PI-2DP films are featured with polycrystalline multilayers with tunable thickness from 6 to 200 nm and large crystalline domains (100–150 nm in size). Intrigued by high crystallinity and the presence of electroactive porphyrin moieties, the optoelectronic properties of PI-2DP are investigated by time-resolved terahertz spectroscopy. Typically, the porphyrin-based PI-2DP 1 film exhibits a p-type semiconductor behavior with a band gap of 1.38 eV and hole mobility as high as 0.01 cm2 V−1 s−1, superior to the previously reported polyimine based materials. © 2020 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA.
  • Thumbnail Image
    Item
    Electronic materials with a wide band gap: Recent developments
    (Chester : International Union of Crystallography, 2014) Klimm, D.
    The development of semiconductor electronics is reviewed briefly, beginning with the development of germanium devices (band gap E g = 0.66 eV) after World War II. A tendency towards alternative materials with wider band gaps quickly became apparent, starting with silicon (E g = 1.12 eV). This improved the signal-to-noise ratio for classical electronic applications. Both semiconductors have a tetrahedral coordination, and by isoelectronic alternative replacement of Ge or Si with carbon or various anions and cations, other semiconductors with wider E g were obtained. These are transparent to visible light and belong to the group of wide band gap semiconductors. Nowadays, some nitrides, especially GaN and AlN, are the most important materials for optical emission in the ultraviolet and blue regions. Oxide crystals, such as ZnO and β-Ga2O3, offer similarly good electronic properties but still suffer from significant difficulties in obtaining stable and technologically adequate p-type conductivity.