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Now showing 1 - 10 of 48
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    Li+/H+ exchange of Li7La3Zr2O12 single and polycrystals investigated by quantitative LIBS depth profiling
    (Cambridge : Royal Society of Chemistry, 2022) Smetaczek, Stefan; Limbeck, Andreas; Zeller, Veronika; Ring, Joseph; Ganschow, Steffen; Rettenwander, Daniel; Fleig, Jürgen
    Li7La3Zr2O12 (LLZO) garnets are highly attractive to be used as solid electrolyte in solid-state Li batteries. However, LLZO suffers from chemical interaction with air and humidity, causing Li+/H+ exchange with detrimental implication on its performance, processing and scalability. To better understand the kinetics of the detrimental Li+/H+ exchange and its dependence on microstructural features, accelerated Li+/H+ exchange experiments were performed on single crystalline and polycrystalline LLZO, exposed for 80 minutes to 80 °C hot water. The resulting chemical changes were quantified by analytical methods, i.e. inductively coupled plasma optical emission spectroscopy (ICP-OES) and laser induced breakdown spectroscopy (LIBS). From the time dependence of the Li+ enrichment in the water, measured by ICP-OES, a bulk interdiffusion coefficient of Li+/H+ could be determined (7 × 10−17 m2 s−1 at 80 °C). Depth dependent concentrations were obtained from the LIBS data for both ions after establishing a calibration method enabling not only Li+ but also H+ quantification in the solid electrolyte. Short interdiffusion lengths in the 1 μm range are found for the single crystalline Ga:LLZO, in accordance with the measured bulk diffusion coefficient. In polycrystalline Ta:LLZO, however, very long diffusion tails in the 20 μm range and ion exchange fractions up to about 70% are observed. Those are attributed to fast ion interdiffusion along grain boundaries. The severe compositional changes also strongly affect the electrical properties measured by impedance spectroscopy. This study highlights that microstructural effects may be decisive for the Li+/H+ ion exchange kinetics of LLZO.
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    Scanning X-ray nanodiffraction from ferroelectric domains in strained K0.75Na0.25NbO3 epitaxial films grown on (110) TbScO3
    (Copenhagen : Munksgaard, 2017) Schmidbauer, Martin; Hanke, Michael; Kwasniewski, Albert; Braun, Dorothee; von Helden, Leonard; Feldt, Christoph; Leake, Steven John; Schwarzkopf, Jutta
    Scanning X-ray nanodiffraction on a highly periodic ferroelectric domain pattern of a strained K0.75Na0.25NbO3 epitaxial layer has been performed by using a focused X-ray beam of about 100 14;nm probe size. A 90°-rotated domain variant which is aligned along [1 2]TSO has been found in addition to the predominant domain variant where the domains are aligned along the [12]TSO direction of the underlying (110) TbScO3 (TSO) orthorhombic substrate. Owing to the larger elastic strain energy density, the 90°-rotated domains appear with significantly reduced probability. Furthermore, the 90°-rotated variant shows a larger vertical lattice spacing than the 0°-rotated domain variant. Calculations based on linear elasticity theory substantiate that this difference is caused by the elastic anisotropy of the K0.75Na0.25NbO3 epitaxial layer.
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    Heteroepitaxial growth of T-Nb2O5 on SrTiO3
    (Basel : MDPI, 2018) Boschker, Jos E.; Markurt, Toni; Albrecht, Martin; Schwarzkopf, Jutta
    There is a growing interest in exploiting the functional properties of niobium oxides in general and of the T-Nb2O5 polymorph in particular. Fundamental investigations of the properties of niobium oxides are, however, hindered by the availability of materials with sufficient structural perfection. It is expected that high-quality T-Nb2O5 can be made using heteroepitaxial growth. Here, we investigated the epitaxial growth of T-Nb2O5 on a prototype perovskite oxide, SrTiO3. Even though there exists a reasonable lattice mismatch in one crystallographic direction, these materials have a significant difference in crystal structure: SrTiO3 is cubic, whereas T-Nb2O5 is orthorhombic. It is found that this difference in symmetry results in the formation of domains that have the T-Nb2O5 c-axis aligned with the SrTiO3 <001>s in-plane directions. Hence, the number of domain orientations is four and two for the growth on (100)s- and (110)s-oriented substrates, respectively. Interestingly, the out-of-plane growth direction remains the same for both substrate orientations, suggesting a weak interfacial coupling between the two materials. Despite challenges associated with the heteroepitaxial growth of T-Nb2O5, the T-Nb2O5 films presented in this paper are a significant improvement in terms of structural quality compared to their polycrystalline counterparts.
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    Investigating the electrochemical stability of Li7La3Zr2O12 solid electrolytes using field stress experiments
    (London [u.a.] : RSC, 2021) Smetaczek, Stefan; Pycha, Eva; Ring, Joseph; Siebenhofer, Matthäus; Ganschow, Steffen; Berendts, Stefan; Nenning, Andreas; Kubicek, Markus; Rettenwander, Daniel; Limbeck, Andreas; Fleig, Jürgen
    Cubic Li7La3Zr2O12 (LLZO) garnets are among the most promising solid electrolytes for solid-state batteries with the potential to exceed conventional battery concepts in terms of energy density and safety. The electrochemical stability of LLZO is crucial for its application, however, controversial reports in the literature show that it is still an unsettled matter. Here, we investigate the electrochemical stability of LLZO single crystals by applying electric field stress via macro- and microscopic ionically blocking Au electrodes in ambient air. Induced material changes are subsequently probed using various locally resolved analysis techniques, including microelectrode electrochemical impedance spectroscopy (EIS), laser induced breakdown spectroscopy (LIBS), laser ablation-inductively coupled plasma-mass spectrometry (LA-ICP-MS), and microfocus X-ray diffraction (XRD). Our experiments indicate that LLZO decomposes at 4.1–4.3 V vs. Li+/Li, leading to the formation of Li-poor phases like La2Zr2O7 beneath the positively polarized electrode. The reaction is still on-going even after several days of polarization, indicating that no blocking interfacial layer is formed. The decomposition can be observed at elevated as well as room temperature and suggests that LLZO is truly not compatible with high voltage cathode materials.
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    Local electronic structure in AlN studied by single-crystal 27Al and 14N NMR and DFT calculations
    (Basel : MDPI, 2020) Zeman, Otto E.O.; Moudrakovski, Igor L.; Hartmann, Carsten; Indris, Sylvio; Bräuniger, Thomas
    Both the chemical shift and quadrupole coupling tensors for 14N and 27Al in the wurtzite structure of aluminum nitride have been determined to high precision by single-crystal NMR spectroscopy. A homoepitaxially grown AlN single crystal with known morphology was used, which allowed for optical alignment of the crystal on the goniometer axis. From the analysis of the rotation patterns of 14N (I = 1) and 27Al (I = 5/2), the quadrupolar coupling constants were determined to ?(14N) = (8.19 ± 0.02) kHz, and ?(27Al) = (1.914 ± 0.001) MHz. The chemical shift parameters obtained from the data fit were diso = -(292.6 ± 0.6) ppm and d? = -(1.9 ± 1.1) ppm for 14N, and (after correcting for the second-order quadrupolar shift) diso = (113.6 ± 0.3) ppm and d? = (12.7 ± 0.6) ppm for 27Al. DFT calculations of the NMR parameters for non-optimized crystal geometries of AlN generally did not match the experimental values, whereas optimized geometries came close for 27Al with ?calc = (1.791 ± 0.003) MHz, but not for 14N with ?calc = -(19.5 ± 3.3) kHz. © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
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    Electronic materials with a wide band gap: Recent developments
    (Chester : International Union of Crystallography, 2014) Klimm, D.
    The development of semiconductor electronics is reviewed briefly, beginning with the development of germanium devices (band gap E g = 0.66 eV) after World War II. A tendency towards alternative materials with wider band gaps quickly became apparent, starting with silicon (E g = 1.12 eV). This improved the signal-to-noise ratio for classical electronic applications. Both semiconductors have a tetrahedral coordination, and by isoelectronic alternative replacement of Ge or Si with carbon or various anions and cations, other semiconductors with wider E g were obtained. These are transparent to visible light and belong to the group of wide band gap semiconductors. Nowadays, some nitrides, especially GaN and AlN, are the most important materials for optical emission in the ultraviolet and blue regions. Oxide crystals, such as ZnO and β-Ga2O3, offer similarly good electronic properties but still suffer from significant difficulties in obtaining stable and technologically adequate p-type conductivity.
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    Crystal structure of strontium praseodum gallium oxide, SrPrGaO4
    (München : R. Oldenbourg Verlag GmbH, 2000) Gesing, T.M.; Uecker, R.; Buhl, J.-C.
    GaO4PrSr, tetragonal, I4/mmm (No. 139), a = 3.822(1) Ã…, c = 12.622(2) Ã…, V = 184.4 Ã…3, Z = 2, Rgt(F) = 0.028, wR(F2) = 0.082, T = 293 K.
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    The electronic structure and the formation of polarons in Mo-doped BiVO4 measured by angle-resolved photoemission spectroscopy
    (London : RSC Publishing, 2019) Mohamed, Mansour; May, Matthias M.; Kanis, Michael; Brützam, Mario; Uecker, Reinhard; van de Krol, Roel; Janowitz, Christoph; Mulazzi, Mattia
    We experimentally investigated the electronic structure of Mo-doped BiVO4 high-quality single-crystals with synchrotron radiation-excited angle-resolved photoelectron spectroscopy (ARPES). By photon-energy dependent ARPES, we measured the bulk-derived valence band dispersion along the direction normal to the (010) cleavage plane, while the dispersion along the in-plane directions is obtained by angle-dependent measurements at fixed photon energy. Our data show that the valence band has a width of about 4.75 eV and is composed of many peaks, the two most intense have energies in good agreement with the theoretically calculated ones. A non-dispersive feature is observed in the fundamental gap, which we attribute to quasiparticle excitations coupling electrons and phonons, i.e. polarons. The determination of the polaron peak binding energy and bulk band gap allows to fix the value of the theoretical mixing parameter necessary in hybrid Hartree–Fock calculations to reproduce the experimental data. The attribution of the in-gap peak to polarons is strengthened by our discussion in the context of experimental transport data and ab initio theory.
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    Lithium metal penetration induced by electrodeposition through solid electrolytes: Example in single-crystal Li6La3ZrTaO12 garnet
    (Pennington, NJ : Electrochemical Society, 2018) Swamy, Tushar; Park, Richard; Sheldon, Brian W.; Rettenwander, Daniel; Porz, Lukas; Berendts, Stefan; Uecker, Reinhard; Carter, W. Craig; Chiang, Yet-Ming
    Solid electrolytes potentially enable rechargeable batteries with lithium metal anodes possessing higher energy densities than today’s lithium ion batteries. To do so the solid electrolyte must suppress instabilities that lead to poor coulombic efficiency and short circuits. In this work, lithium electrodeposition was performed on single-crystal Li6La3ZrTaO12 garnets to investigate factors governing lithium penetration through brittle electrolytes. In single crystals, grain boundaries are excluded as paths for lithium metal propagation. Vickers microindentation was used to introduce surface flaws of known size. However, operando optical microscopy revealed that lithium metal penetration propagates preferentially from a different, second class of flaws. At the perimeter of surface current collectors smaller in size than the lithium source electrode, an enhanced electrodeposition current density causes lithium filled cracks to initiate and grow to penetration, even when large Vickers defects are in proximity. Modeling the electric field distribution in the experimental cell revealed that a 5-fold enhancement in field occurs within 10 micrometers of the electrode edge and generates high local electrochemomechanical stress. This may determine the initiation sites for lithium propagation, overriding the presence of larger defects elsewhere.
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    Crystal structure of aluminium cyclononaphosphate, Al3P9O27
    (München : R. Oldenbourg Verlag GmbH, 2000) Fratzky, D.; Schneider, M.; Meisel, M.
    Al3O27P9, trigonal, P3Ì„c1 (No. 165), a = 10.935(2) Ã…, c = 9.191(2) Ã…, V = 951.8 Ã…3, Z = 8, Rgt(F) = 0.037, wRref(F2) = 0.094, T = 293 K.