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DDC: 570 × Publisher: Amsterdam : Elsevier Science ×

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    Achieving diffraction-limited resolution in soft-X-ray Fourier-transform holography
    (Amsterdam : Elsevier Science, 2020) Geilhufe, Jan; Pfau, Bastian; Günther, Christian M.; Schneider, Michael; Eisebitt, Stefan
    The spatial resolution of microscopic images acquired via X-ray Fourier-transform holography is limited by the source size of the reference wave and by the numerical aperture of the detector. We analyze the interplay between both influences and show how they are matched in practice. We further identify, how high spatial frequencies translate to imaging artifacts in holographic reconstructions where mainly the reference beam limits the spatial resolution. As a solution, three methods are introduced based on numerical post-processing of the reconstruction. The methods comprise apodization of the hologram, refocusing via wave propagation, and deconvolution using the transfer function of the imaging system. In particular for the latter two, we demonstrate that image details smaller than the source size of the reference beam can be recovered up to the diffraction limit of the hologram. Our findings motivate the intentional application of a large reference-wave source enhancing the image contrast in applications with low photon numbers such as single-shot experiments at free-electron lasers or imaging at laboratory sources.
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    Strategy for optimizing experimental settings for studying low atomic number colloidal assemblies using liquid phase scanning transmission electron microscopy
    (Amsterdam : Elsevier Science, 2022) Kunnas, Peter; Moradi, Mohammad-Amin; Sommerdijk, Nico; de Jonge, Niels
    Observing processes of nanoscale materials of low atomic number is possible using liquid phase electron microscopy (LP-EM). However, the achievable spatial resolution (d) is limited by radiation damage. Here, we examine a strategy for optimizing LP-EM experiments based on an analytical model and experimental measurements, and develop a method for quantifying image quality at ultra low electron dose De using scanning transmission electron microscopy (STEM). As experimental test case we study the formation of a colloidal binary system containing 30 nm diameter SiO2 nanoparticles (SiONPs), and 100 nm diameter polystyrene microspheres (PMs). We show that annular dark field (DF) STEM is preferred over bright field (BF) STEM for practical reasons. Precise knowledge of the material's density is crucial for the calculations in order to match experimental data. To calculate the detectability of nano-objects in an image, the Rose criterion for single pixels is expanded to a model of the signal to noise ratio obtained for multiple pixels spanning the image of an object. Using optimized settings, it is possible to visualize the radiation-sensitive, hierarchical low-Z binary structures, and identify both components.
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    Application of electron tomography for comprehensive determination of III-V interface properties
    (Amsterdam : Elsevier Science, 2021) Nicolai, Lars; Biermann, Klaus; Trampert, Achim
    We present an electron tomography method for the comprehensive characterization of buried III-V semiconductor interfaces that is based on chemical-sensitive high-angle annular dark-field scanning transmission electron microscopy. For this purpose, an (Al,Ga)As/GaAs multi-layer system grown by molecular beam epitaxy is used as a case study. Isoconcentration surfaces are exploited to obtain topographic height maps of 120 nm × 120 nm area, revealing the interface morphology. By applying the height-height correlation function, we are able to determine important interface properties like root mean square roughness and lateral correlation length of various interfaces of the (Al,Ga)As/GaAs system characterized by different Al concentrations. Height-difference maps based on isosurfaces corresponding to 30% and 70% of the total compositional difference at the interfaces are used to create topographic maps of the interface width and to calculate an average interface width. This methodology proves differences in the properties of direct and inverted interfaces and allows the observation of interfacial anisotropies. © 2021