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Electronic Properties and Structure of Boron–Hydrogen Complexes in Crystalline Silicon

2021-9-17, De Guzman, Joyce Ann T., Markevich, Vladimir P., Coutinho, José, Abrosimov, Nikolay V., Halsall, Matthew P., Peaker, Anthony R.

The subject of hydrogen–boron interactions in crystalline silicon is revisited with reference to light and elevated temperature-induced degradation (LeTID) in boron-doped solar silicon. Ab initio modeling of structure, binding energy, and electronic properties of complexes incorporating a substitutional boron and one or two hydrogen atoms is performed. From the calculations, it is confirmed that a BH pair is electrically inert. It is found that boron can bind two H atoms. The resulting BH2 complex is a donor with a transition level estimated at E c–0.24 eV. Experimentally, the electrically active defects in n-type Czochralski-grown Si crystals co-doped with phosphorus and boron, into which hydrogen is introduced by different methods, are investigated using junction capacitance techniques. In the deep-level transient spectroscopy (DLTS) spectra of hydrogenated Si:P + B crystals subjected to heat-treatments at 100 °C under reverse bias, an electron emission signal with an activation energy of ≈0.175 eV is detected. The trap is a donor with electronic properties close to those predicted for boron–dihydrogen. The donor character of BH2 suggests that it can be a very efficient recombination center of minority carriers in B-doped p-type Si crystals. A sequence of boron–hydrogen reactions, which can be related to the LeTID effect in Si:B is proposed.

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Photocatalytic Reduction of CO2 by Metal-Free-Based Materials: Recent Advances and Future Perspective

2020, Shen, Huidong, Peppel, Tim, Strunk, Jennifer, Sun, Zhenyu

Photocatalytic CO2 reduction to produce valuable chemicals and fuels using solar energy provides an appealing route to alleviate global energy and environmental problems. Searching for photocatalysts with high activity and selectivity for CO2 conversion is the key to achieving this goal. Among the various proposed photocatalysts, metal-free materials, such as graphene, nitrides, carbides, and conjugated organic polymers, have gained extensive research interest for photocatalytic CO2 reduction, due to their earth abundance, cost-effectiveness, good electrical conductivity, and environmental friendliness. They exhibit prominent catalytic activity, impressive selectivity, and long durability for the conversion of CO2 to solar fuels. Herein, the recent progress on metal-free photocatalysis of CO2 reduction is systematically reviewed. Opportunities and challenges on modification of nonmetallic catalysts to enhance CO2 transformation are presented. Theoretical calculations on possible reduction mechanisms and pathways as well as the potential in situ and operando techniques for mechanistic understanding are also summarized and discussed. Based on the aforementioned discussions, suitable future research directions and perspectives for the design and development of potential nonmetallic photocatalysts for efficient CO2 reduction are provided. © 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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Protection Mechanism against Photocorrosion of GaN Photoanodes Provided by NiO Thin Layers

2020, Kamimura, Jumpei, Budde, Melanie, Bogdanoff, Peter, Tschammer, Carsten, Abdi, Fatwa F., van de Krol, Roel, Bierwagen, Oliver, Riechert, Henning, Geelhaar, Lutz

The photoelectrochemical properties of n-type Ga-polar GaN photoelectrodes covered with NiO layers of different thicknesses in the range 0–20 nm are investigated for aqueous solution. To obtain layers of well-defined thickness and high crystal quality, NiO is grown by plasma-assisted molecular-beam epitaxy. Stability tests reveal that the NiO layers suppress photocorrosion. With increasing NiO thickness, the onset of the photocurrent is shifted to more positive voltages and the photocurrent is reduced, especially for low bias potentials, indicating that hole transfer to the electrolyte interface is hindered by thicker NiO layers. Furthermore, cathodic transient spikes are observed under intermittent illumination, which hints at surface recombination processes. These results are inconsistent with the common explanation of the protection mechanism that the band alignment of GaN/NiO enables efficient hole-injection, thus preventing hole accumulation at the GaN surface that would lead to anodic photocorrosion. Interestingly, the morphology of the etch pits as well as further experiments involving the photodeposition of Ag indicate that photocorrosion of GaN photoanodes is related to reductive processes at threading dislocations. Therefore, it is concluded that the NiO layers block the transfer of photogenerated electrons from GaN to the electrolyte interface, which prevents the cathodic photocorrosion. © 2020 The Authors. Solar RRL published by Wiley-VCH GmbH