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    Copper Iodide on Spacer Fabrics as Textile Thermoelectric Device for Energy Generation
    (Basel : MDPI, 2022) Schmidl, Gabriele; Jia, Guobin; Gawlik, Annett; Lorenz, Philipp; Zieger, Gabriel; Dellith, Jan; Diegel, Marco; Plentz, Jonathan
    The integration of electronic functionalities into textiles for use as wearable sensors, energy harvesters, or coolers has become increasingly important in recent years. A special focus is on efficient thermoelectric materials. Copper iodide as a p-type thermoelectrically active, nontoxic material is attractive for energy harvesting and energy generation because of its transparency and possible high-power factor. The deposition of CuI on polyester spacer fabrics by wet chemical processes represents a great potential for use in textile industry for example as flexible thermoelectric energy generators in the leisure or industrial sector as well as in medical technologies. The deposited material on polyester yarn is investigated by electron microscopy, x-ray diffraction and by thermoelectric measurements. The Seebeck coefficient was observed between 112 and 153 µV/K in a temperature range between 30 °C and 90 °C. It is demonstrated that the maximum output power reached 99 nW at temperature difference of 65.5 K with respect to room temperature for a single textile element. However, several elements can be connected in series and the output power can be linear upscaled. Thus, CuI coated on 3D spacer fabrics can be attractive to fabricate thermoelectric devices especially in the lower temperature range for textile medical or leisure applications.
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    DC conductivity and Seebeck coefficient of nonstoichiometric MgCuZn ferrites
    (Warsaw : De Gruyter Open, 2017-2-8) Madhuri, W.; Kiran, S. Roopas; Reddy, M. Penchal; Reddy, N. Ramamanohar; Kumar, K.V. Siva
    Nonstoichiometric series of Mg0.5-xCuxZn0.5Fe1.9O4-δ where x = 0.0, 0.1, 0.15, 0.2 and 0.25 has been synthesized by conventional solid state reaction route. The single phase spinel structure of the double sintered ferrites was confirmed by X-ray diffraction patterns (XRD). The ferrite series was studied in terms of DC electrical conductivity and thermoelectric power in the temperature ranging from room temperature to 300 °C and 400 °C, respectively. It was observed that DC electrical conductivity and Seebeck coefficient α decreased with the increase in x. DC electrical conductivity was found to decrease by about 4 orders. All the compositions showed a negative Seebeck coefficient exhibiting n-type semiconducting nature. From the above experimental results, activation energy and mobility of all the samples were estimated. Small polaron hopping conduction mechanism was suggested for the series of ferrites. Owing to their low conductivity the nonstoichiometric MgCuZn ferrites are the best materials for transformer core and high definition television deflection yokes. © 2017 Wroclaw University of Science and Technology.
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    Temperature dependence of the Seebeck coefficient of epitaxial β -Ga2O3 thin films
    (Melville, NY : AIP Publ., 2019) Boy, Johannes; Handwerg, Martin; Ahrling, Robin; Mitdank, Rüdiger; Wagner, Günter; Galazka, Zbigniew; Fischer, Saskia F.
    The temperature dependence of the Seebeck coefficient of homoepitaxial metal organic vapor phase grown, silicon doped β-Ga 2 O 3 thin films was measured relative to aluminum. For room temperature, we found the relative Seebeck coefficient of Sβ-Ga2O3-Al=(-300±20) μV/K. At high bath temperatures T > 240 K, the scattering is determined by electron-phonon-interaction. At lower bath temperatures between T = 100 K and T = 300 K, an increase in the magnitude of the Seebeck coefficient is explained in the frame of Stratton's formula. The influence of different scattering mechanisms on the magnitude of the Seebeck coefficient is discussed and compared with Hall measurement results. © 2019 Author(s).