Filters

2012 - 20153

More filters

20193
Reset filters

Settings

DDC: 620 × Publisher: London : Nature Publishing Group × Subject: Applied physics × Subject: Magnetic properties and materials ×

Search Results

Now showing 1 - 3 of 3
  • Thumbnail Image
    Item
    Distinct itinerant spin-density waves and local-moment antiferromagnetism in an intermetallic ErPd2 Si2 single crystal
    (London : Nature Publishing Group, 2015) Li, Hai-Feng; Cao, Chongde; Wildes, Andrew; Schmidt, Wolfgang; Schmalzl, Karin; Hou, Binyang; Regnault, Louis-Pierre; Zhang, Cong; Meuffels, Paul; Löser, Wolfgang; Roth, Georg
    Identifying the nature of magnetism, itinerant or localized, remains a major challenge in condensed-matter science. Purely localized moments appear only in magnetic insulators, whereas itinerant moments more or less co-exist with localized moments in metallic compounds such as the doped-cuprate or the iron-based superconductors, hampering a thorough understanding of the role of magnetism in phenomena like superconductivity or magnetoresistance. Here we distinguish two antiferromagnetic modulations with respective propagation wave vectors at Q± = (H ± 0.557(1), 0, L ± 0.150(1)) and QC = (H ± 0.564(1), 0, L), where (H, L) are allowed Miller indices, in an ErPd2Si2 single crystal by neutron scattering and establish their respective temperature- and field-dependent phase diagrams. The modulations can co-exist but also compete depending on temperature or applied field strength. They couple differently with the underlying lattice albeit with associated moments in a common direction. The Q± modulation may be attributed to localized 4f moments while the QC correlates well with itinerant conduction bands, supported by our transport studies. Hence, ErPd2Si2 represents a new model compound that displays clearly-separated itinerant and localized moments, substantiating early theoretical predictions and providing a unique platform allowing the study of itinerant electron behavior in a localized antiferromagnetic matrix.
  • Thumbnail Image
    Item
    Imperceptible magnetoelectronics
    (London : Nature Publishing Group, 2015) Melzer, Michael; Kaltenbrunner, Martin; Makarov, Denys; Karnaushenko, Dmitriy; Karnaushenko, Daniil; Sekitani, Tsuyoshi; Someya, Takao; Schmidt, Oliver G.
    Future electronic skin aims to mimic nature’s original both in functionality and appearance. Although some of the multifaceted properties of human skin may remain exclusive to the biological system, electronics opens a unique path that leads beyond imitation and could equip us with unfamiliar senses. Here we demonstrate giant magnetoresistive sensor foils with high sensitivity, unmatched flexibility and mechanical endurance. They are <2 μm thick, extremely flexible (bending radii <3 μm), lightweight (≈3 g m−2) and wearable as imperceptible magneto-sensitive skin that enables proximity detection, navigation and touchless control. On elastomeric supports, they can be stretched uniaxially or biaxially, reaching strains of >270% and endure over 1,000 cycles without fatigue. These ultrathin magnetic field sensors readily conform to ubiquitous objects including human skin and offer a new sense for soft robotics, safety and healthcare monitoring, consumer electronics and electronic skin devices.
  • Thumbnail Image
    Item
    Linear magnetoresistance due to multiple-electron scattering by low-mobility islands in an inhomogeneous conductor
    (London : Nature Publishing Group, 2012) Kozlova, N .V.; Mori, N.; Makarovsky, O.; Eaves, L.; Zhuang, Q.D.; Krier, A.; Patanè, A.
    Linear transverse magnetoresistance is commonly observed in many material systems including semimetals, narrow band-gap semiconductors, multi-layer graphene and topological insulators. It can originate in an inhomogeneous conductor from distortions in the current paths induced by macroscopic spatial fluctuations in the carrier mobility and it has been explained using a phenomenological semiclassical random resistor network model. However, the link between the linear magnetoresistance and the microscopic nature of the electron dynamics remains unknown. Here we demonstrate how the linear magnetoresistance arises from the stochastic behaviour of the electronic cycloidal trajectories around low-mobility islands in high-mobility inhomogeneous conductors and that this process is only weakly affected by the applied electric field strength. Also, we establish a quantitative link between the island morphology and the strength of linear magnetoresistance of relevance for future applications.