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- Item240-GHz Reflectometer-Based Dielectric Sensor With Integrated Transducers in a 130-nm SiGe BiCMOS Technology(New York, NY : IEEE, 2021) Wang, Defu; Eissa, Mohamed Hussein; Schmalz, Klaus; Kampfe, Thomas; Kissinger, DietmarThis article presents a reflectometer-based on-chip dielectric sensor with integrated transducers at 240 GHz. The chip simplifies the measurement of a vector network analyzer (VNA) to sense the incident and reflected waves by using two heterodyne mixer-based receivers with a dielectric sensing element. Radio frequency (RF) and local oscillator (LO) submillimeter waves are generated by two frequency multiplier chains, respectively. Two back-to-back identical differential side-coupled directive couplers are proposed to separate the incident and reflected signals and couple them to mixers. Both transmission line and coplanar stripline transducers are proposed and integrated with reflectometer to investigate the sensitivity of dielectric sensors. The latter leads to a larger power variation of the reflectometer by providing more sufficient operating bands for the magnitude and phase slope of S11 . The readout of the transducers upon exposure to liquids is performed by the measurement of their reflected signals using two external excitation sources. The experimental dielectric sensing is demonstrated by using binary methanol–ethanol mixture placed on the proposed on-chip dielectric sensor in the assembled printed circuit board. It enables a maximum 8 dB of the power difference between the incident and reflected channels on the measurement of liquid solvents. Both chips occupy an area of 4.03 mm 2 and consume 560 mW. Along with a wide operational frequency range from 200 to 240 GHz, this simplified one-port-VNA-based on-chip device makes it feasible for the use of handle product and suitable for the submillimeter-wave dielectric spectroscopy applications.
- ItemMillimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies(New York, NY : IEEE, 2021) Kissinger, Dietmar; Kahmen, Gerhard; Weigel, RobertThis invited paper reviews the progress of silicon–germanium (SiGe) bipolar-complementary metal–oxide–semiconductor (BiCMOS) technology-based integrated circuits (ICs) during the last two decades. Focus is set on various transceiver (TRX) realizations in the millimeter-wave range from 60 GHz and at terahertz (THz) frequencies above 300 GHz. This article discusses the development of SiGe technologies and ICs with the latter focusing on the commercially most important applications of radar and beyond 5G wireless communications. A variety of examples ranging from 77-GHz automotive radar to THz sensing as well as the beginnings of 60-GHz wireless communication up to THz chipsets for 100-Gb/s data transmission are recapitulated. This article closes with an outlook on emerging fields of research for future advancement of SiGe TRX performance.
- ItemOn-Chip Dispersion Measurement of the Quadratic Electro-Optic Effect in Nonlinear Optical Polymers Using a Photonic Integrated Circuit Technology(New York, NY : IEEE, 2019) Steglich, Patrick; Villringer, Claus; Dietzel, Birgit; Mai, Christian; Schrader, Sigurd; Casalboni, Mauro; Mai, AndreasA novel method to determine the dispersion of the quadratic electro-optic effect in nonlinear optical materials by using a silicon-on-insulator microring resonator is presented. The microring consists of a silicon slot waveguide enabling large dc electric field strength at low applied voltages. The dispersion of third-order hyperpolarizability of a linear conjugated dye is approximated by using a two-level model for the off-resonant spectral region. As an example, the dispersion of the resonance wavelength of the resonator filled with a dye doped polymer was measured in dependence of the applied dc voltage. The polymer was poly (methylmethacrylate) doped with 5 wt% disperse red 1 (DR1), and the measurements have been carried out at the telecommunication wavelength band around 1550 nm (optical C-band). The described measurements represent a new technique to determine the dispersion of the third-order susceptibility and molecular hyperpolarizability of the material filled into the slot of the ring-resonator. © 2019 IEEE.
- ItemA Scalable Four-Channel Frequency-Division Multiplexing MIMO Radar Utilizing Single-Sideband Delta-Sigma Modulation(New York, NY : IEEE, 2019) Ng, Herman Jalli; Hasan, Raqibul; Kissinger, DietmarA scalable four-channel multiple-input multiple-output (MIMO) radar that features a modular system architecture and a novel frequency-division multiplexing approach is presented in this article. It includes a single 30-GHz voltage-controlled oscillator (VCO) for the local oscillator signal generation, four cascaded 120-GHz transceivers with a frequency quadrupler, and on-board differential series-fed patch antennas. The utilized uniform antenna configuration results in 16 virtual array elements and enables an angular resolution of 6.2°. The vector modulators in the transmit (TX) paths allow the application of complex bit streams of second-order delta-sigma modulators easily generated on a field-programmable gate array (FPGA) to implement single-sideband (SSB) modulation on the TX signals resulting in orthogonal waveforms for the MIMO operation. Only one phase-locked loop and no digital-To-Analog converter is required. The waveform diversity also allows the simultaneous transmission of the TX signals to reduce the measurement time. The application of the SSB modulation on the frequency-modulated continuous-wave MIMO radar requires only half of the intermediate frequency bandwidth compared with the double-sideband modulation. The issue of the phase and amplitude mismatches at the virtual array elements due to the scalable radar architecture is addressed and a calibration solution is introduced in this article. Radar measurements using different numbers of virtual array elements were compared and the digital-beamforming method was applied to the results to create 2-D images. © 1963-2012 IEEE.
- ItemCMOS-Compatible Silicon Photonic Sensor for Refractive Index Sensing Using Local Back-Side Release(New York, NY : IEEE, 2020) Steglich, Patrick; Bondarenko, Siegfried; Mai, Christian; Paul, Martin; Weller, Michael G.; Mai, AndreasSilicon photonic sensors are promising candidates for lab-on-a-chip solutions with versatile applications and scalable production prospects using complementary metal-oxide semiconductor (CMOS) fabrication methods. However, the widespread use has been hindered because the sensing area adjoins optical and electrical components making packaging and sensor handling challenging. In this work, a local back-side release of the photonic sensor is employed, enabling a separation of the sensing area from the rest of the chip. This approach allows preserving the compatibility of photonic integrated circuits in the front-end of line and metal interconnects in the back-end of line. The sensor is based on a micro-ring resonator and is fabricated on wafer-level using a CMOS technology. We revealed a ring resonator sensitivity for homogeneous sensing of 106 nm/RIU. © 1989-2012 IEEE.
- ItemOn wireless channel parameters for key generation in industrial environments(New York, NY : IEEE, 2017) Kreiser, Dan; Dyka, Zoya; Kornemann, Stephan; Wittke, Christian; Kabin, Ievgen; Stecklina, Oliver; Langendoerfer, PeterThe advent of industry 4.0 with its idea of individualized mass production will significantly increase the demand for more flexibility on the production floor. Wireless communication provides this type of flexibility but puts the automation system at risk as potential attackers now can eavesdrop or even manipulate the messages exchanged even without getting access to the premises of the victim. Cryptographic means can prevent such attacks if applied properly. One of their core components is the distribution of keys. The generation of keys from channel parameters seems to be a promising approach in comparison to classical approaches based on public key cryptography as it avoids computing intense operations for exchanging keys. In this paper we investigated key generation approaches using channel parameters recorded in a real industrial environment. Our key results are that the key generation may take unpredictable long and that the resulting keys are of low quality with respect to the test for randomness we applied.
- ItemEfficient Current Injection Into Single Quantum Dots Through Oxide-Confined p-n-Diodes(New York, NY : IEEE, 2016) Kantner, Markus; Bandelow, Uwe; Koprucki, Thomas; Schulze, Jan-Hindrik; Strittmatter, Andre; Wunsche, Hans-JurgenCurrent injection into single quantum dots embedded in vertical p-n-diodes featuring oxide apertures is analyzed in the low-injection regime suitable for single-photon emitters. The experimental and theoretical evidence is found for a rapid lateral spreading of the carriers after passing the oxide aperture in the conventional p-i-n-design. By an alternative design employing p-doping up to the oxide aperture, the current spreading can be suppressed resulting in an enhanced current confinement and increased injection efficiencies, both, in the continuous wave and under pulsed excitation.
- ItemStability of ZnSe-Passivated Laser Facets Cleaved in Air and in Ultra-High Vacuum(New York, NY : IEEE, 2022) Boschker, Jos E.; Spengler, Uwe; Ressel, Peter; Schmidbauer, Martin; Mogilatenko, Anna; Knigge, AndreaCatastrophic optical mirror damage (COMD) is one of the main failure mechanisms limiting the reliability of GaAs based laser diodes. Here, we compare the facet stability of ZnSe-passivated ridge-waveguide lasers (RWLs) that are cleaved in air and subsequently cleaned using atomic hydrogen with RWLs that are cleaved in ultra-high vacuum. RWLs cleaved in ultra-high vacuum show a superior performance and reach power densities up to 58 MW/cm 2 under extended continuous wave operation at 1064 nm. This is attributed to the reduction of defects at the interface between ZnSe and the cleaved facet as evidenced by transmission electron microscopy and X-ray diffraction.
- ItemModeling of edge-emitting lasers based on tensile strained germanium microstrips(New York, NY : IEEE, 2015) Peschka, D.; Thomas, M.; Glitzky, A.; Nürnberg, R.; Gärtner, K.; Virgilio, M.; Guha, S.; Schroeder, T.; Capellini, G.; Koprucki, Th.In this paper, we present a thorough modeling of an edge-emitting laser based on strained germanium (Ge) microstrips. The full-band structure of the tensile strained Ge layer enters the calculation of optical properties. Material gain for strained Ge is used in the 2D simulation of the carrier transport and of the optical field within a cross section of the microstrips orthogonal to the optical cavity. We study optoelectronic properties of the device for two different designs. The simulation results are very promising as they show feasible ways toward Ge emitter devices with lower threshold currents and higher efficiency as published insofar.
- ItemThe Effect of Chirp on Pulse Compression at a Group Velocity Horizon(New York, NY : IEEE, 2016) Babushkin, Ihar; Amiranashvili, Shalva; Bree, Carsten; Morgner, Uwe; Steinmeyer, Gunter; Demircan, AyhanGroup-velocity matched cross-phase modulation between a fundamental soliton and a dispersive wave packet has been previously suggested for optical switching applications similar to an optical transistor. Moreover, the nonlinear interaction in the resulting group-velocity horizon can be exploited for adiabatic compression of the soliton down into the few-cycle regime. Here, we study the delicate phase- and frequency-matching mechanism of soliton/dispersive wave interaction by controlling the input chirp of the dispersive wave. We demonstrate that such a modification of the dispersive wave can significantly alter the soliton dynamics. In particular, we show that it allows a decrease of the fiber length needed for the best compression and, to some extent, control of the trajectory of the soliton. The mechanism of such an influence is related to the modification of the phase-matching condition between the soliton and dispersive wave.