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    Monitoring the chemistry of self-healing by vibrational spectroscopy - Current state and perspectives
    (Amsterdam [u.a.] : Elsevier, 2014) Zedler, L.; Hager, M.D.; Schubert, U.S.; Harrington, M.J.; Schmitt, M.; Popp, J.; Dietzek, B.
    Self-healing materials are designed to heal damage caused by, for example, mechanical stress or aging such that the original functionality of the material is at least partially restored. Thus, self-healing materials hold great promise for prolonging the lifetime of machines, particularly those in remote locations, as well as in increasing the reliability and safety associated with functional materials in, for example, aeronautics applications. Recent material science applications of self-healing have led to an increased interest in the field and, consequently, the spectroscopic characterization of a wide range of self-healing materials with respect to their mechanical properties such as stress and strain resistance and elasticity was in the focus. However, the characterization of the chemical mechanisms underlying various self-healing processes locally within the damaged region of materials still presents a major challenge. This requires experimental techniques that work non-destructively in situ and are capable of revealing the chemical composition of a sample with sufficient spatial and temporal resolution without disturbing the healing process. Along these lines, vibrational spectroscopy and, in particular Raman spectroscopy, holds great promise, largely due to the high spatial resolution in the order of several hundreds of nanometers that can be obtained. This article aims to summarize the state of the art and prospective of Raman spectroscopy to contribute significant insights to the research on self-healing materials - in particular focusing on polymer and biopolymer materials.
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    Substrate-orientation dependence of β -Ga2O3 (100), (010), (001), and (2 ̄ 01) homoepitaxy by indium-mediated metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE)
    (Melville, NY : AIP Publ., 2020) Mazzolini, P.; Falkenstein, A.; Wouters, C.; Schewski, R.; Markurt, T.; Galazka, Z.; Martin, M.; Albrecht, M.; Bierwagen, O.
    We experimentally demonstrate how In-mediated metal-exchange catalysis (MEXCAT) allows us to widen the deposition window for β-Ga2O3 homoepitaxy to conditions otherwise prohibitive for its growth via molecular beam epitaxy (e.g., substrate temperatures ≥800 °C) on the major substrate orientations, i.e., (010), (001), (2⎯⎯01), and (100) 6°-offcut. The obtained crystalline qualities, surface roughnesses, growth rates, and In-incorporation profiles are shown and compared with different experimental techniques. The growth rates, Γ, for fixed growth conditions are monotonously increasing with the surface free energy of the different orientations with the following order: Γ(010) > Γ(001) > Γ(2⎯⎯01) > Γ(100). Ga2O3 surfaces with higher surface free energy provide stronger bonds to the surface ad-atoms or ad-molecules, resulting in decreasing desorption, i.e., a higher incorporation/growth rate. The structural quality in the case of (2⎯⎯01), however, is compromised by twin domains due to the crystallography of this orientation. Notably, our study highlights β-Ga2O3 layers with high structural quality grown by MEXCAT-MBE not only in the most investigated (010) orientation but also in the (100) and (001) ones. In particular, MEXCAT on the (001) orientation results in both growth rate and structural quality comparable to the ones achievable with (010), and the limited incorporation of In associated with the MEXCAT deposition process does not change the insulating characteristics of unintentionally doped layers. The (001) surface is therefore suggested as a valuable alternative orientation for devices.