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- ItemAnalysis of catalyst surface wetting: The early stage of epitaxial germanium nanowire growth(Frankfurt, M. : Beilstein-Institut zur Förderung der Chemischen Wissenschaften, 2020) Ernst, Owen C.; Lange, Felix; Uebel, David; Teubner, Thomas; Boeck, TorstenThe dewetting process is crucial for several applications in nanotechnology. Even though not all dewetting phenomena are fully understood yet, especially regarding metallic fluids, it is clear that the formation of nanometre-sized particles, droplets, and clusters as well as their movement are strongly linked to their wetting behaviour. For this reason, the thermodynamic stability of thin metal layers (0.1-100 nm) with respect to their free energy is examined here. The decisive factor for the theoretical considerations is the interfacial energy. In order to achieve a better understanding of the interfacial interactions, three different models for estimating the interfacial energy are presented here: (i) fully theoretical, (ii) empirical, and (iii) semi-empirical models. The formation of nanometre-sized gold particles on silicon and silicon oxide substrates is investigated in detail. In addition, the strengths and weaknesses of the three models are elucidated, the different substrates used are compared, and the possibility to further process the obtained particles as nanocatalysts is verified. The importance of a persistent thin communication wetting layer between the particles and its effects on particle size and number is also clarified here. In particular, the intrinsic reduction of the Laplace pressure of the system due to material re-evaporation and Ostwald ripening describes the theoretically predicted and experimentally obtained results. Thus, dewetting phenomena of thin metal layers can be used to manufacture nanostructured devices. From this point of view, the application of gold droplets as catalysts to grow germanium nanowires on different substrates is described. © 2020 Ernst et al.
- ItemAtomically controlled CVD processing of group IV semiconductors for ultra-large-scale integrations(Bristol : IOP Publishing, 2012) Murota, Junichi; Sakuraba, Masao; Tillack, BerndOne of the main requirements for ultra-large-scale integrations (ULSIs) is atomic-order control of process technology. Our concept of atomically controlled processing is based on atomic-order surface reaction control by CVD. By ultraclean low-pressure CVD using SiH4 and GeH4 gases, high-quality low-temperature epitaxial growth of Si1−xGex (100) (x=0–1) with atomically flat surfaces and interfaces on Si(100) is achieved. Self-limiting formation of 1–3 atomic layers of group IV or related atoms in the thermal adsorption and reaction of hydride gases on Si1-xGex (100) are generalized based on the Langmuir-type model. By the Si epitaxial growth on top of the material already-formed on Si(100), N, B and C atoms are confined within about a 1 nm thick layer. In Si cap layer growth on the P atomic layer formed on Si1−xGex (100), segregation of P atoms is suppressed by using Si2H6 instead of SiH4 at a low temperature of 450 °C. Heavy C atomic-layer doping suppresses strain relaxation as well as intermixing between Si and Ge at the Si1−xGex/Si heterointerface. It is confirmed that higher carrier concentration and higher carrier mobility are achieved by atomic-layer doping. These results open the way to atomically controlled technology for ULSIs.
- ItemDiffusion and interface effects during preparation of all-solid microstructured fibers(Basel : MDPI AG, 2014) Kobelke, J.; Bierlich, J.; Wondraczek, K.; Aichele, C.; Pan, Z.; Unger, S.; Schuster, K.; Bartelt, H.All-solid microstructured optical fibers (MOF) allow the realization of very flexible optical waveguide designs. They are prepared by stacking of doped silica rods or canes in complex arrangements. Typical dopants in silica matrices are germanium and phosphorus to increase the refractive index (RI), or boron and fluorine to decrease the RI. However, the direct interface contact of stacking elements often causes interrelated chemical reactions or evaporation during thermal processing. The obtained fiber structures after the final drawing step thus tend to deviate from the targeted structure risking degrading their favored optical functionality. Dopant profiles and design parameters(e.g., the RI homogeneity of the cladding) are controlled by the combination of diffusion and equilibrium conditions of evaporation reactions. We show simulation results of diffusion and thermal dissociation in germanium and fluorine doped silica rod arrangements according to the monitored geometrical disturbances in stretched canes or drawn fibers. The paper indicates geometrical limits of dopant structures in sub-μm-level depending on the dopant concentration and the thermal conditions during the drawing process. The presented results thus enable an optimized planning of the preform parameters avoiding unwanted alterations in dopant concentration profiles or in design parameters encountered during the drawing process.
- ItemNanoscopic tip sensors fabricated by gas phase etching of optical glass fibers(Heidelberg : Springer, 2012) Bierlich, J.; Kobelke, J.; Brand, D.; Kirsch, K.; Dellith, J.; Bartelt, H.Silica-based fiber tips are used in a variety of spectroscopic, micro- or nano-scopic optical sensor applications and photonic micro-devices. The miniaturization of optical sensor systems and the technical implementation using optical fibers can provide new sensor designs with improved properties and functionality for new applications. The selective-etching of specifically doped silica fibers is a promising method in order to form complex photonic micro structures at the end or within fibers such as tips and cavities in various shapes useful for the all-fiber sensor and imaging applications. In the present study, we investigated the preparation of geometrically predefined, nanoscaled fiber tips by taking advantage of the dopant concentration profiles of highly doped step-index fibers. For this purpose, a gas phase etching process using hydrofluoric acid (HF) vapor was applied. The shaping of the fiber tips was based on very different etching rates as a result of the doping characteristics of specific optical fibers. Technological studies on the influence of the etching gas atmosphere on the temporal tip shaping and the final geometry were performed using undoped and doped silica fibers. The influence of the doping characteristics was investigated in phosphorus-, germanium-, fluorine- and boron-doped glass fibers. Narrow exposed as well as protected internal fiber tips in various shapes and tip radiuses down to less than 15 nm were achieved and characterized geometrically and topologically. For investigations into surface plasmon resonance effects, the fiber tips were coated with nanometer-sized silver layers by means of vapour deposition and finally subjected to an annealing treatment.
- ItemRipple coarsening on ion beam-eroded surfaces(New York, NY [u.a.] : Springer, 2014) Teichmann, M.; Lorbeer, J.; Frost, F.; Rauschenbach, B.Abstract: The temporal evolution of ripple pattern on Ge, Si, Al2O3, and SiO2 by low-energy ion beam erosion with Xe + ions is studied. The experiments focus on the ripple dynamics in a fluence range from 1.1 × 1017 cm-2 to 1.3 × 1019 cm-2 at ion incidence angles of 65° and 75° and ion energies of 600 and 1,200 eV. At low fluences a short-wavelength ripple structure emerges on the surface that is superimposed and later on dominated by long wavelength structures for increasing fluences. The coarsening of short wavelength ripples depends on the material system and angle of incidence. These observations are associated with the influence of reflected primary ions and gradient-dependent sputtering. The investigations reveal that coarsening of the pattern is a universal behavior for all investigated materials, just at the earliest accessible stage of surface evolution.