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DDC: 620 × Subject: Materials properties ×

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    Ab initio based study of finite-temperature structural, elastic and thermodynamic properties of FeTi
    (Amsterdam [u.a.] : Elsevier, 2014) Zhu, L.-F.; Friák, M.; Udyansky, A.; Ma, D.; Schlieter, A.; Kühn, U.; Eckert, J.; Neugebauer, J.
    We employ density functional theory (DFT) to calculate pressure dependences of selected thermodynamic, structural and elastic properties as well as electronic structure characteristics of equiatomic B2 FeTi. We predict ground-state single-crystalline Young's modulus and its two-dimensional counterpart, the area modulus, together with homogenized polycrystalline elastic parameters. Regarding the electronic structure of FeTi, we analyze the band structure and electronic density of states. Employing (i) an analytical dynamical matrix parametrized in terms of elastic constants and lattice parameters in combination with (ii) the quasiharmonic approximation we then obtained free energies, the thermal expansion coefficient, heat capacities at constant pressure and volume, as well as isothermal bulk moduli at finite temperatures. Experimental measurements of thermal expansion coefficient complement our theoretical investigation and confirm our theoretical predictions. It is worth mentioning that, as often detected in other intermetallics, some materials properties of FeTi strongly differ from the average of the corresponding values found in elemental Fe and Ti. These findings can have important implications for future materials design of new intermetallic materials.
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    The Bain library: A Cu-Au buffer template for a continuous variation of lattice parameters in epitaxial films
    (New York : American Institute of Physics, 2014) Kauffmann-Weiss, S.; Hamann, S.; Reichel, L.; Siegel, A.; Alexandrakis, V.; Heller, R.; Schultz, L.; Ludwig, A.; Fähler, S.
    Smallest variations of the lattice parameter result in significant changes in material properties. Whereas in bulk, lattice parameters can only be changed by composition or temperature, coherent epitaxial growth of thin films on single crystals allows adjusting the lattice parameters independently. Up to now only discrete values were accessible by using different buffer or substrate materials. We realize a lateral variation of in-plane lattice parameters using combinatorial film deposition of epitaxial Cu-Au on a 4-in. Si wafer. This template gives the possibility to adjust the in-plane lattice parameter over a wide range from 0.365 nm up to 0.382 nm.