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DDC: 620 × Subject: Nanocrystals ×

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    High-Resolution Inkjet Printing of Quantum Dot Light-Emitting Microdiode Arrays
    (Weinheim : Wiley-VCH Verlag, 2020) Yang, P.; Zhang, L.; Kang, D.J.; Strahl, R.; Kraus, T.
    The direct printing of microscale quantum dot light-emitting diodes (QLEDs) is a cost-effective alternative to the placement of pre-formed LEDs. The quality of printed QLEDs currently is limited by nonuniformities in droplet formation, wetting, and drying during inkjet printing. Here, optimal ink formulation which can suppress nonuniformities at the pixel and array levels is demonstrated. A solvent mixture is used to tune the ejected droplet size, ensure wetting, and provoke Marangoni flows that prevent coffee stain rings. Arrays of green QLED devices are printed at a resolution of 500 pixels in.−1 with a maximum luminance of ≈3000 cd m−2 and a peak current efficiency of 2.8 cd A−1. The resulting array quality is sufficient to print displays at state-of-the-art resolutions.
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    Electrochemically deposited nanocrystalline InSb thin films and their electrical properties
    (Cambridge : Royal Society of Chemistry, 2016) Hnida, K.E.; Bäßler, S.; Mech, J.; Szaciłowski, K.; Socha, R.P.; Gajewska, M.; Nielsch, K.; Przybylski, M.; Sulka, G.D.
    We present an electrochemical route to prepare nanocrystalline InSb thin films that can be transferred to an industrial scale. The morphology, composition, and crystallinity of the prepared uniform and compact thin films with a surface area of around 1 cm2 were investigated. The essential electrical characteristics such as conductivity, Seebeck coefficient, the type, concentration and mobility of charge carriers have been examined and compared with InSb nanowires obtained in the same system for electrochemical deposition (fixed pulse sequence, temperature, electrolyte composition, and system geometry). Moreover, obtained thin films show much higher band gap energy (0.53 eV) compared to the bulk material (0.17 eV) and InSb nanowires (0.195 eV).
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    Correction: Electrochemically deposited nanocrystalline InSb thin films and their electrical properties (Journal of Materials Chemistry C (2016) 4 (1345-1350) DOI: 10.1039/C5TC03656A)
    (London : RSC Publ., 2019) Hnida, K.E.; Bäßler, S.; Mech, J.; Szaciłowski, K.; Socha, R.P.; Gajewska, M.; Nielsch, K.; Przybylski, M.; Sulka, G.D.
    There was an error in eqn (3) which was reproduced from the literature and used for the interpretation of the results. The calculations (using the equations from an original work from 1987) were done according the correct version of eqn (3) presented below:. (Table Presented). © 2019 The Royal Society of Chemistry.