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DDC: 620 × Subject: Nitrides ×

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    Waveguide-Integrated Broadband Spectrometer Based on Tailored Disorder
    (Weinheim : Wiley-VCH Verlag, 2020) Hartmann, Wladick; Varytis, Paris; Gehring, Helge; Walter, Nicolai; Beutel, Fabian; Busch, Kurt; Pernice, Wolfram
    Compact, on-chip spectrometers exploiting tailored disorder for broadband light scattering enable high-resolution signal analysis while maintaining a small device footprint. Due to multiple scattering events of light in the disordered medium, the effective path length of the device is significantly enhanced. Here, on-chip spectrometers are realized for visible and near-infrared wavelengths by combining an efficient broadband fiber-to-chip coupling approach with a scattering area in a broadband transparent silicon nitride waveguiding structure. Air holes etched into a structured silicon nitride slab terminated with multiple waveguides enable multipath light scattering in a diffusive regime. Spectral-to-spatial mapping is performed by determining the transmission matrix at the waveguide outputs, which is then used to reconstruct the probe signals. Direct comparison with theoretical analyses shows that such devices can be used for high-resolution spectroscopy from the visible up to the telecom wavelength regime. © 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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    On the Impact of Strained PECVD Nitride Layers on Oxide Precipitate Nucleation in Silicon
    (Pennington, NJ : ECS, 2019) Kissinger, G.; Kot, D.; Costina, I.; Lisker, M.
    PECVD nitride layers with different layer stress ranging from about 315 MPa to −1735 MPa were deposited on silicon wafers with similar concentration of interstitial oxygen. After a thermal treatment consisting of nucleation at 650°C for 4 h or 8 h followed annealing 780°C 3 h + 1000°C 16 h in nitrogen, the profiles of the oxide precipitate density were investigated. The binding states of hydrogen in the layers was investigated by FTIR. There is a clear effect of the layer stress on oxide precipitate nucleation. The higher the compressive layer stress is the higher is a BMD peak below the front surface. If the nitride layer is removed after the nucleation anneal the BMD peak below the front surface becomes lower. It is possible to model the BMD peak below the surface by vacancy in-diffusion from the silicon/nitride interface. With increasing duration of the nucleation anneal the vacancy injection from the silicon/nitride interface decreases and with increasing compressive layer stress it increases. © The Author(s) 2019.
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    Advances in group-III-nitride photodetectors
    (Sharjah [u.a.] : Bentham Open, 2010) Rivera, C.; Pereiro, J.; Navarro, A.; Muñoz, E.; Brandt, O.; Grahn, H.T.
    Group-III nitrides are considered to be a strategic technology for the development of ultraviolet photodetectors due to their remarkable properties in terms of spectral selectivity, radiation hardness, and noise. The potential advantages of these materials were initially obscured by their large density of intrinsic defects. The advances were thus associated in general with improvements in material quality. Although technology still also needs improvement, efforts are being intensified in the fabrication of advanced structures for photodetector applications. In particular, this review discusses the recent progress in group-III-nitride photodetectors, emphasizing the work reported on quantum-well-based photodetectors, the use of novel structures exploiting the effect of piezoelectric polarization-induced fields, and polarization-sensitive photodetectors. Furthermore, some ideas can be generalized to other material systems such as ZnO and their related compounds, which exhibit the same crystal structure as group-III nitrides. © Rivera et al.; Licensee Bentham Open.