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DDC: 620 × Subject: semiconductor lasers ×

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    Stability of ZnSe-Passivated Laser Facets Cleaved in Air and in Ultra-High Vacuum
    (New York, NY : IEEE, 2022) Boschker, Jos E.; Spengler, Uwe; Ressel, Peter; Schmidbauer, Martin; Mogilatenko, Anna; Knigge, Andrea
    Catastrophic optical mirror damage (COMD) is one of the main failure mechanisms limiting the reliability of GaAs based laser diodes. Here, we compare the facet stability of ZnSe-passivated ridge-waveguide lasers (RWLs) that are cleaved in air and subsequently cleaned using atomic hydrogen with RWLs that are cleaved in ultra-high vacuum. RWLs cleaved in ultra-high vacuum show a superior performance and reach power densities up to 58 MW/cm 2 under extended continuous wave operation at 1064 nm. This is attributed to the reduction of defects at the interface between ZnSe and the cleaved facet as evidenced by transmission electron microscopy and X-ray diffraction.
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    Annealing induced atomic rearrangements on (Ga,In) (N,As) probed by hard X-ray photoelectron spectroscopy and X-ray absorption fine structure
    (London : Nature Publishing, 2018) Ishikawa, Fumitaro; Higashi, Kotaro; Fuyuno, Satoshi; Morifuji, Masato; Kondow, Masahiko; Trampert, Achim
    We study the effects of annealing on (Ga0.64,In0.36) (N0.045,As0.955) using hard X-ray photoelectron spectroscopy and X-ray absorption fine structure measurements. We observed surface oxidation and termination of the N-As bond defects caused by the annealing process. Specifically, we observed a characteristic chemical shift towards lower binding energies in the photoelectron spectra related to In. This phenomenon appears to be caused by the atomic arrangement, which produces increased In-N bond configurations within the matrix, as indicated by the X-ray absorption fine structure measurements. The reduction in the binding energies of group-III In, which occurs concomitantly with the atomic rearrangements of the matrix, causes the differences in the electronic properties of the system before and after annealing.