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DDC: 620 × Subject: silicon photonics ×

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    CMOS-Compatible Silicon Photonic Sensor for Refractive Index Sensing Using Local Back-Side Release
    (New York, NY : IEEE, 2020) Steglich, Patrick; Bondarenko, Siegfried; Mai, Christian; Paul, Martin; Weller, Michael G.; Mai, Andreas
    Silicon photonic sensors are promising candidates for lab-on-a-chip solutions with versatile applications and scalable production prospects using complementary metal-oxide semiconductor (CMOS) fabrication methods. However, the widespread use has been hindered because the sensing area adjoins optical and electrical components making packaging and sensor handling challenging. In this work, a local back-side release of the photonic sensor is employed, enabling a separation of the sensing area from the rest of the chip. This approach allows preserving the compatibility of photonic integrated circuits in the front-end of line and metal interconnects in the back-end of line. The sensor is based on a micro-ring resonator and is fabricated on wafer-level using a CMOS technology. We revealed a ring resonator sensitivity for homogeneous sensing of 106 nm/RIU. © 1989-2012 IEEE.
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    Penalties From 2D Grating Coupler Induced Polarization Crosstalk in Silicon Photonic Coherent Transceivers
    (New York, NY : IEEE, 2022) Georgieva, Galina; Sena, Matheus; Seiler, Pascal M.; Petermann, Klaus; Fischer, Johannes; Zimmermann, Lars
    Silicon photonic two-dimensional grating couplers for C- and O-band dual-polarization coherent transceivers are analyzed with respect to their polarization splitting/combining performance. Due to scattered light in the grating's plane, a linear cross-polarization results. The latter is responsible for a limited polarization split ratio and a polarizations' non-orthogonality. The impact of these two quantities is evaluated by system-level simulations with regard to OSNR penalties in coherent systems. For both C- and O-band, a design modification for reduced penalties is proposed.