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DDC: 620 × Subject: synthesis ×

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Now showing 1 - 4 of 4
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    Air-stable redox-active nanomagnets with lanthanide spins radical-bridged by a metal–metal bond
    (London : Nature Publishing Group, 2019) Liu, F.; Velkos, G.; Krylov, D.S.; Spree, L.; Zalibera, M.; Ray, R.; Samoylova, N.A.; Chen, C.-H.; Rosenkranz, M.; Schiemenz, S.; Ziegs, F.; Nenkov, K.; Kostanyan, A.; Greber, T.; Wolter, A.U.B.; Richter, M.; Büchner, B.; Avdoshenko, S.M.; Popov, A.A.
    Engineering intramolecular exchange interactions between magnetic metal atoms is a ubiquitous strategy for designing molecular magnets. For lanthanides, the localized nature of 4f electrons usually results in weak exchange coupling. Mediating magnetic interactions between lanthanide ions via radical bridges is a fruitful strategy towards stronger coupling. In this work we explore the limiting case when the role of a radical bridge is played by a single unpaired electron. We synthesize an array of air-stable Ln 2 @C 80 (CH 2 Ph) dimetallofullerenes (Ln 2 = Y 2 , Gd 2 , Tb 2 , Dy 2 , Ho 2 , Er 2 , TbY, TbGd) featuring a covalent lanthanide-lanthanide bond. The lanthanide spins are glued together by very strong exchange interactions between 4f moments and a single electron residing on the metal–metal bonding orbital. Tb 2 @C 80 (CH 2 Ph) shows a gigantic coercivity of 8.2 Tesla at 5 K and a high 100-s blocking temperature of magnetization of 25.2 K. The Ln-Ln bonding orbital in Ln 2 @C 80 (CH 2 Ph) is redox active, enabling electrochemical tuning of the magnetism.
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    Polymeric monolithic materials: Syntheses, properties, functionalization and applications
    (Amsterdam : Elsevier, 2007) Buchmeiser, M.R.
    The synthetic particularities for the synthesis of polymer-based monolithic materials are summarized. In this context, monoliths prepared via thermal-, UV- or electron-beam triggered free radical polymerization, controlled TEMPO-mediated radical polymerization, polyaddition, polycondensation as well as living ring-opening metathesis polymerization (ROMP) will be covered. Particular attention is devoted to the aspects of controlling pore sizes, pore volumes and pore size distributions as well as functionalization of these supports. Finally, selected, recent applications in separation science, (bio-) catalysis and chip technology will be summarized. © 2007 Elsevier Ltd. All rights reserved.
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    Substrate Developments for the Chemical Vapor Deposition Synthesis of Graphene
    (Weinheim : Wiley-VCH Verlag, 2020) Shi, Q.; Tokarska, K.; Ta, H.Q.; Yang, X.; Liu, Y.; Ullah, S.; Liu, L.; Trzebicka, B.; Bachmatiuk, A.; Sun, J.; Fu, L.; Liu, Z.; Rümmeli, M.H.
    Since the isolation of graphene and numerous demonstrations of its unique properties, the expectations for this material to be implemented in many future commercial applications have been enormous. However, to date, challenges still remain. One of the key challenges is the fabrication of graphene in a manner that satisfies processing requirements. While transfer of graphene can be used, this tends to damage or contaminate it, which degrades its performance. Hence, there is an important drive to grow graphene directly over a number of technologically important materials, viz., different substrate materials, so as to avoid the need for transfer. One of the more successful approaches to synthesis graphene is chemical vapor deposition (CVD), which is well established. Historically, transition metal substrates are used due to their catalytic properties. However, in recent years this has developed to include many nonmetal substrate systems. Moreover, both solid and molten substrate forms have also been demonstrated. In addition, the current trend to progress flexible devices has spurred interest in graphene growth directly over flexible materials surfaces. All these aspects are presented in this review which presents the developments in available substrates for graphene fabrication by CVD, with a focus primarily on large area graphene.
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    Facile production of ultra-fine silicon nanoparticles
    (London : Royal Society Publishing, 2020) Tokarska, Klaudia; Shi, Qitao; Otulakowski, Lukasz; Wrobel, Pawel; Ta, Huy Quang; Kurtyka, Przemyslaw; Kordyka, Aleksandra; Siwy, Mariola; Vasylieva, Margaryta; Forys, Aleksander; Trzebick, Barbara; Bachmatiuk, Alicja; Rümmeli, Mark H.
    A facile procedure for the synthesis of ultra-fine silicon nanoparticles without the need for a Schlenk vacuum line is presented. The process consists of the production of a (HSiO1.5)n sol–gel precursor based on the polycondensation of low-cost trichlorosilane (HSiCl3), followed by its annealing and etching. The obtained materials were thoroughly characterized after each preparation step by electron microscopy, Fourier transform and Raman spectroscopy, X-ray dispersion spectroscopy, diffraction methods and photoluminescence spectroscopy. The data confirm the formation of ultra-fine silicon nanoparticles with controllable average diameters between 1 and 5 nm depending on the etching time.