Filters

2010 - 20182

More filters

20202
Reset filters

Settings

DDC: 620 × Subject: theoretical model ×

Search Results

Now showing 1 - 2 of 2
  • Thumbnail Image
    Item
    Volume fraction determination of binary liquid mixtures by measurement of the equalization wavelength
    (Basel : MDPI, 2010) Martincek, I.; Pudis, D.; Kacik, D.; Schuster, K.
    A method for determination of the volume fraction in binary liquid mixtures by measurement of the equalization wavelength of intermodal interference of modes LP01 and LP11 in a liquid core optical fiber is presented in this paper. This method was studied using a liquid core optical fiber with fused silica cladding and a core made up of a binary silicon oil/chloroform liquid mixture with different volume fractions of chloroform. The interference technique used allows us to determine the chloroform volume fraction in the binary mixture with accuracy better than 0.1%. One of the most attractive advantages of presented method is very small volume of investigated mixture needed, as only a few hundred picoliters are necessary for reliable results. © 2010 by the authors.
  • Thumbnail Image
    Item
    Impact of the precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO2 RRAM devices
    (London : Nature Publishing Group, 2018) Grossi, A.; Perez, E.; Zambelli, C.; Olivo, P.; Miranda, E.; Roelofs, R.; Woodruff, J.; Raisanen, P.; Li, W.; Givens, M.; Costina, I.; Schubert, M.A.; Wenger, C.
    The Resistive RAM (RRAM) technology is currently in a level of maturity that calls for its integration into CMOS compatible memory arrays. This CMOS integration requires a perfect understanding of the cells performance and reliability in relation to the deposition processes used for their manufacturing. In this paper, the impact of the precursor chemistries and process conditions on the performance of HfO2 based memristive cells is studied. An extensive characterization of HfO2 based 1T1R cells, a comparison of the cell-to-cell variability, and reliability study is performed. The cells’ behaviors during forming, set, and reset operations are monitored in order to relate their features to conductive filament properties and process-induced variability of the switching parameters. The modeling of the high resistance state (HRS) is performed by applying the Quantum-Point Contact model to assess the link between the deposition condition and the precursor chemistry with the resulting physical cells characteristics.