2017, Huang, Huiying, Trotta, Rinaldo, Huo, Yongheng, Lettner, Thomas, Wildmann, Johannes S., Martín-Sánchez, Javier, Huber, Daniel, Reindl, Marcus, Zhang, Jiaxiang, Zallo, Eugenio, Schmidt, Oliver G., Rastelli, Armando

We demonstrate the first wavelength-tunable electrically pumped source of nonclassical light that can emit photons with wavelength in resonance with the D2 transitions of 87Rb atoms. The device is fabricated by integrating a novel GaAs single-quantum-dot light-emitting diode (LED) onto a piezoelectric actuator. By feeding the emitted photons into a 75 mm long cell containing warm 87Rb vapor, we observe slow-light with a temporal delay of up to 3.4 ns. In view of the possibility of using 87Rb atomic vapors as quantum memories, this work makes an important step toward the realization of hybrid-quantum systems for future quantum networks.

2016, Mitrofanov, Kirill V., Fons, Paul, Makino, Kotaro, Terashima, Ryo, Shimada, Toru, Kolobov, Alexander, V., Tominaga, Junji, Bragaglia, Valeria, Giussani, Alessandro, Calarco, Raffaella, Riechert, Henning, Sato, Takahiro, Katayama, Tetsuo, Ogawa, Kanade, Togashi, Tadashi, Yabashi, Makina, Wall, Simon, Brewe, Dale, Hase, Muneaki

Phase-change materials based on Ge-Sb-Te alloys are widely used in industrial applications such as nonvolatile memories, but reaction pathways for crystalline-to-amorphous phase-change on picosecond timescales remain unknown. Femtosecond laser excitation and an ultrashort x-ray probe is used to show the temporal separation of electronic and thermal effects in a long-lived (>100 ps) transient metastable state of Ge2Sb2Te5 with muted interatomic interaction induced by a weakening of resonant bonding. Due to a specific electronic state, the lattice undergoes a reversible nondestructive modification over a nanoscale region, remaining cold for 4 ps. An independent time-resolved x-ray absorption fine structure experiment confirms the existence of an intermediate state with disordered bonds. This newly unveiled effect allows the utilization of non-thermal ultra-fast pathways enabling artificial manipulation of the switching process, ultimately leading to a redefined speed limit and improved energy efficiency and reliability of phase-change memory technologies.

2008, PDI

[no abstract available]

2014, Wang, K., Gu, Y., Zhou, H.F., Zhang, L.Y., Kang, C.Z., Wu, M.J., Pan, W.W., Lu, P.F., Gong, Q., Wang, S.M.

InPBi was predicted to be the most robust infrared optoelectronic material but also the most difficult to synthesize within In-VBi (V = P, As and Sb) 25 years ago. We report the first successful growth of InPBi single crystals with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InPBi thin films reveal excellent surface, structural and optical qualities making it a promising new III–V compound family member for heterostructures. The Bi concentration is found to be 2.4 ± 0.4% with 94 ± 5% Bi atoms at substitutional sites. Optical absorption indicates a band gap of 1.23 eV at room temperature while photoluminescence shows unexpectedly strong and broad light emission at 1.4–2.7 μm which can't be explained by the existing theory.

2023, Lü, X., Röben, B., Biermann, K., Wubs, J.R., Macherius, U., Weltmann, K.-D., van Helden, J.H., Schrottke, L., Grahn, H.T.

We report on terahertz (THz) quantum-cascade lasers (QCLs) based on GaAs/AlAs heterostructures, which exhibit single-mode emission at 3.360, 3.921, and 4.745 THz. These frequencies are in close correspondence to fine-structure transitions of Al atoms, N+ ions, and O atoms, respectively. Due to the low electrical pump power of these THz QCLs, they can be operated in a mechanical cryocooler in continuous-wave mode, while a sufficient intrinsic tuning range of more than 5 GHz is maintained. The single-mode operation and the intrinsic tuning range of these THz QCLs allow for the application of these lasers as radiation sources for high-resolution absorption spectroscopy to determine the absolute densities of Al atoms, N+ ions, and O atoms in plasmas.

2022, Mazzolini, Piero, Fogarassy, Zsolt, Parisini, Antonella, Mezzadri, Francesco, Diercks, David, Bosi, Matteo, Seravalli, Luca, Sacchi, Anna, Spaggiari, Giulia, Bersani, Danilo, Bierwagen, Oliver, Janzen, Benjamin Moritz, Marggraf, Marcella Naomi, Wagner, Markus R., Cora, Ildiko, Pécz, Béla, Tahraoui, Abbes, Bosio, Alessio, Borelli, Carmine, Leone, Stefano, Fornari, Roberto

Unintentionally doped (001)-oriented orthorhombic κ-Ga2O3 epitaxial films on c-plane sapphire substrates are characterized by the presence of ≈ 10 nm wide columnar rotational domains that can severely inhibit in-plane electronic conduction. Comparing the in- and out-of-plane resistance on well-defined sample geometries, it is experimentally proved that the in-plane resistivity is at least ten times higher than the out-of-plane one. The introduction of silane during metal-organic vapor phase epitaxial growth not only allows for n-type Si extrinsic doping, but also results in the increase of more than one order of magnitude in the domain size (up to ≈ 300 nm) and mobility (highest µ ≈ 10 cm2V−1s−1, with corresponding lowest ρ ≈ 0.2 Ωcm). To qualitatively compare the mean domain dimension in κ-Ga2O3 epitaxial films, non-destructive experimental procedures are provided based on X-ray diffraction and Raman spectroscopy. The results of this study pave the way to significantly improved in-plane conduction in κ-Ga2O3 and its possible breakthrough in new generation electronics. The set of cross-linked experimental techniques and corresponding interpretation here proposed can apply to a wide range of material systems that suffer/benefit from domain-related functional properties.

2009, Santos, Paulo V.

[no abstract available]

2014, Bang, Do, Awano, Hiroyuki, Tominaga, Junji, Kolobov, Alexander V., Fons, Paul, Saito, Yuta, Makino, Kotaro, Nakano, Takashi, Hase, Muneaki, Takagaki, Yukihiko, Giussani, Alessandro, Calarco, Raffaella, Murakami, Shuichi

Interfacial phase change memory (iPCM), that has a structure of a superlattice made of alternating atomically thin GeTe and Sb2Te3 layers, has recently attracted attention not only due to its superior performance compared to the alloy of the same average composition in terms of energy consumption but also due to its strong response to an external magnetic field (giant magnetoresistance) that has been speculated to arise from switching between topological insulator (RESET) and normal insulator (SET) phases. Here we report magneto-optical Kerr rotation loops in the visible range, that have mirror symmetric resonances with respect to the magnetic field polarity at temperatures above 380 K when the material is in the SET phase that has Kramers-pairs in spin-split bands. We further found that this threshold temperature may be controlled if the sample was cooled in a magnetic field. The observed results open new possibilities for use of iPCM beyond phase-change memory applications.

2018, Boschker, Jos E., Lü, Xiang, Bragaglia, Valeria, Wang,Ruining, Grahn, Holger T., Calarco, Raffaella

Phase change materials such as pseudobinary GeTe-Sb2Te3 (GST) alloys are an essential part of existing and emerging technologies. Here, we investigate the electrical and optical properties of epitaxial phase change materials: α-GeTe, Ge2Sb2Te5 (GST225), and Sb2Te3. Temperature-dependent Hall measurements reveal a reduction of the hole concentration with increasing temperature in Sb2Te3 that is attributed to lattice expansion, resulting in a non-linear increase of the resistivity that is also observed in GST225. Fourier transform infrared spectroscopy at room temperature demonstrates the presence of electronic states within the energy gap for α-GeTe and GST225. We conclude that these electronic states are due to vacancy clusters inside these two materials. The obtained results shed new light on the fundamental properties of phase change materials such as the high dielectric constant and persistent photoconductivity and have the potential to be included in device simulations.

2010, PDI

[no abstract available]