283 results
Search Results
Now showing 1 - 10 of 283
- ItemMode competition in broad-ridge-waveguide lasers(Bristol : IOP Publ., 2020) Koester, J.-P.; Putz, A.; Wenzel, H.; Wünsche, H.-J.; Radziunas, M.; Stephan, H.; Wilkens, M.; Zeghuzi, A.; Knigge, A.The lateral brightness achievable with high-power GaAs-based laser diodes having long and broad waveguides is commonly regarded to be limited by the onset of higher-order lateral modes. For the study of the lateral-mode competition two complementary simulation tools are applied, representing different classes of approximations. The first tool bases on a completely incoherent superposition of mode intensities and disregards longitudinal effects like spatial hole burning, whereas the second tool relies on a simplified carrier transport and current flow. Both tools yield agreeing power-current characteristics that fit the data measured for 5-23 µm wide ridges. Also, a similarly good qualitative conformance of the near and far fields is found. However, the threshold of individual modes, the partition of power between them at a given current, and details of the near and far fields show differences. These differences are the consequence of a high sensitivity of the mode competition to details of the models and of the device structure. Nevertheless, it can be concluded concordantly that the brightness rises with increasing ridge width irrespective of the onset of more and more lateral modes. The lateral brightness W mm-1at 10 MW cm-2 power density on the front facet of the investigated laser with widest ridge (23 µm) is comparable with best values known from much wider broad-area lasers. In addition, we show that one of the simulation tools is able to predict beam steering and coherent beam coupling without introducing any phenomenological coupling coefficient or asymmetries. © 2020 The Author(s). Published by IOP Publishing Ltd.
- ItemMicro Fresnel mirror array with individual mirror control(Bristol : IOP Publ., 2020) Poyyathuruthy Bruno, Binal; Schütze, Robert; Grunwald, Ruediger; Wallrabe, UlrikeWe present the design and fabrication of a miniaturized array of piezoelectrically actuated high speed Fresnel mirrors with individual mirror control. These Fresnel mirrors can be used to generate propagation invariant and self-healing interference patterns. The mirrors are actuated using piezobimorph actuators, and the consequent change of the tilting angle of the mirrors changes the fringe spacing of the interference pattern generated. The array consists of four Fresnel mirrors each having an area of 2 × 2 mm2 arranged in a 2x2 configuration. The device, optimized using FEM simulations, is able to achieve maximum mirror deflections of 15 mrad, and has a resonance frequency of 28 kHz.
- ItemTerahertz quantum-cascade lasers for high-resolution absorption spectroscopy of atoms and ions in plasmas(Bristol : IOP Publ., 2023) Lü, X.; Röben, B.; Biermann, K.; Wubs, J.R.; Macherius, U.; Weltmann, K.-D.; van Helden, J.H.; Schrottke, L.; Grahn, H.T.We report on terahertz (THz) quantum-cascade lasers (QCLs) based on GaAs/AlAs heterostructures, which exhibit single-mode emission at 3.360, 3.921, and 4.745 THz. These frequencies are in close correspondence to fine-structure transitions of Al atoms, N+ ions, and O atoms, respectively. Due to the low electrical pump power of these THz QCLs, they can be operated in a mechanical cryocooler in continuous-wave mode, while a sufficient intrinsic tuning range of more than 5 GHz is maintained. The single-mode operation and the intrinsic tuning range of these THz QCLs allow for the application of these lasers as radiation sources for high-resolution absorption spectroscopy to determine the absolute densities of Al atoms, N+ ions, and O atoms in plasmas.
- ItemWavelength stabilized high pulse power 48 emitter laser bars for automotive light detection and ranging application(Bristol : IOP Publ., 2020) Klehr, Andreas; Liero, Armin; Christopher, Heike; Wenzel, Hans; Maaßdorf, Andre; Della Casa, Pietro; Fricke, Jörg; Ginolas, Arnim; Knigge, AndreaDiode lasers generating optical pulses with high peak power and lengths in the nanosecond range are key components for light detection and ranging systems, e.g. for autonomous driving and object detection. We present here an internally wavelength stabilized distributed Bragg reflector broad area laser bar with 48 emitters. The vertical structure based on AlGaAs (confinement and cladding layers) and InGaAs (active quantum well) is specifically optimized for wavelength-stabilized pulsed operation, applying a surface Bragg grating with high reflectivity. The bar is electrically driven by a new in-house developed high-speed driver based on GaN transistors providing current pulses with amplitudes of up to 1000 A and a repetition frequency of 10 kHz. The generated 4 ns to 10 ns long optical pulses are nearly rectangular shaped and reach a pulse peak power in excess of 600 Watts at 25 °C. The optical spectrum with a centre wavelength of about 900 nm has a width of 0.15 nm (FWHM) with a side mode suppression ratio > 30 dB. © 2020 IOP Publishing Ltd.
- ItemHigh-performance SiGe HBTs for next generation BiCMOS technology(Bristol : IOP Publ., 2018) Rücker, Holger; Heinemann, BerndThis paper addresses fabrication aspects of SiGe heterojunction bipolar transistors which record high-speed performance. We previously reported fT values of 505 GHz, fMAX values of 720 GHz, and ring oscillator gate delays of 1.34 ps for these transistors. The impact of critical process steps on radio frequency performance is discussed. This includes millisecond annealing for enhanced dopant activation and optimization of the epitaxial growth process of the base layer. It is demonstrated that the use of a disilane precursor instead of silane can result in reduced base resistance and favorable device scalability.
- ItemMagnetic granularity in pulsed laser deposited YBCO films on technical templates at 5 K(Bristol : IOP Publ., 2017-9-4) Lao, M.; Hecher, J.; Pahlke, P.; Sieger, M.; Hühne, R.; Eisterer, M.The manifestation of granularity in the superconducting properties of pulsed laser deposited YBCO films on commercially available metallic templates was investigated by scanning Hall probe microscopy at 5 K and was related to local orientation mapping of the YBCO layer. The YBCO films on stainless steel templates with a textured buffer layer of yttrium stabilized ZrO2 grown by alternating beam assisted deposition have a mean grain size of less than with a sharp texture. This results in a homogeneous trapped field profile and spatial distribution of the current density. On the other hand, YBCO films on biaxially textured NiW substrates show magnetic granularity that persists down to a temperature of 5 K and up to an applied magnetic field of 4 T. The origin of the granular field profile is directly correlated to the microstructural properties of the YBCO layer adopted from the granular NiW substrate which leads to a spatially inhomogeneous current density. Grain-to-grain in-plane tilts lead to grain boundaries that obstruct the current while out-of-plane tilts mainly affect the grain properties, resulting in areas with low . Hence, not all grain boundaries cause detrimental effects on since the orientation of individual NiW grains also contributes to observed inhomogeneity and granularity.
- ItemStructural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope(Bristol : IOP Publ., 2020) Trager-Cowan, C.; Alasmari, A.; Avis, W.; Bruckbauer, J.; Edwards, P.R.; Ferenczi, G.; Hourahine, B.; Kotzai, A.; Kraeusel, S.; Kusch, G.; Martin, R.W.; McDermott, R.; Naresh-Kumar, G.; Nouf-Allehiani, M.; Pascal, E.; Thomson, D.; Vespucci, S.; Smith, M.D.; Parbrook, P.J.; Enslin, J.; Mehnke, F.; Kuhn, C.; Wernicke, T.; Kneissl, M.; Hagedorn, S.; Knauer, A.; Walde, S.; Weyers, M.; Coulon, P.-M.; Shields, P.A.; Bai, J.; Gong, Y.; Jiu, L.; Zhang, Y.; Smith, R.M.; Wang, T.; Winkelmann, A.The scanning electron microscopy techniques of electron backscatter diffraction (EBSD), electron channelling contrast imaging (ECCI) and cathodoluminescence (CL) hyperspectral imaging provide complementary information on the structural and luminescence properties of materials rapidly and non-destructively, with a spatial resolution of tens of nanometres. EBSD provides crystal orientation, crystal phase and strain analysis, whilst ECCI is used to determine the planar distribution of extended defects over a large area of a given sample. CL reveals the influence of crystal structure, composition and strain on intrinsic luminescence and/or reveals defect-related luminescence. Dark features are also observed in CL images where carrier recombination at defects is non-radiative. The combination of these techniques is a powerful approach to clarifying the role of crystallography and extended defects on a material's light emission properties. Here we describe the EBSD, ECCI and CL techniques and illustrate their use for investigating the structural and light emitting properties of UV-emitting nitride semiconductor structures. We discuss our investigations of the type, density and distribution of defects in GaN, AlN and AlGaN thin films and also discuss the determination of the polarity of GaN nanowires. © 2020 The Author(s). Published by IOP Publishing Ltd.
- ItemField-induced interactions in magneto-active elastomers - a comparison of experiments and simulations(Bristol : IOP Publ., 2020) Metsch, P.; Schmidt, H.; Sindersberger, D.; Kalina, K.A.; Brummund, J.; Auernhammer, G.K.; Monkman, G.J.; Kästner, M.In this contribution, field-induced interactions of magnetizable particles embedded into a soft elastomer matrix are analyzed with regard to the resulting mechanical deformations. By comparing experiments for two-, three- and four-particle systems with the results of finite element simulations, a fully coupled continuum model for magneto-active elastomers is validated with the help of real data for the first time. The model under consideration permits the investigation of magneto-active elastomers with arbitrary particle distances, shapes and volume fractions as well as magnetic and mechanical properties of the individual constituents. It thus represents a basis for future studies on more complex, realistic systems. Our results show a very good agreement between experiments and numerical simulations—the deformation behavior of all systems is captured by the model qualitatively as well as quantitatively. Within a sensitivity analysis, the influence of the initial particle positions on the systems' response is examined. Furthermore, a comparison of the full three-dimensional model with the often used, simplified two-dimensional approach shows the typical overestimation of resulting interactions in magneto-active elastomers.
- ItemEffects of post metallization annealing on Al2O3 atomic layer deposition on n-GaN(Bristol : IOP Publ., 2022) Tadmor, Liad; Brusaterra, Enrico; Treidel, Eldad Bahat; Brunner, Frank; Bickel, Nicole; Vandenbroucke, Sofie S. T.; Detavernier, Christophe; Würfl, Joachim; Hilt, OliverThe chemical, physical and electrical properties and the robustness of post metallization annealed Al2O3 atomic layers deposited on n-type GaN are investigated in this work. Planar metal insulator capacitors are used to demonstrate a gate-first with following ohmic contacts formation at elevated temperature up to 600 °C process flow. X-ray photoelectron spectroscopy indicates that no new bonds in the Al2O3 layer are formed due to exposure to the elevated annealing temperature. X-ray diffraction measurements show no crystallization of the oxide layer. Atomic force microscopy shows signs of degradation of the sample annealed at 600 °C. Electrical measurements indicate that the elevated annealing temperature results in an increase of the oxide depletion and the deep depletion capacitances simultaneously, that results in a reduction of the flat band voltage to zero, which is explained by fixed oxide charges curing. A forward bias step stress capacitance measurement shows that the total number of induced trapped charges are not strongly affected by the elevated annealing temperatures. Interface trap density of states analysis shows the lowest trapping concentration for the capacitor annealed at 500 °C. Above this temperature, the interface trap density of states increases. When all results are taken into consideration, we have found that the process thermal budget allows for an overlap between the gate oxide post metallization annealing and the ohmic contact formation at 500 °C.
- ItemTerahertz quantum-cascade lasers for high-resolution absorption spectroscopy of atoms and ions in plasmas(Bristol : IOP Publ., 2023) Lü, X.; Röben, B.; Biermann, K.; Wubs, J.R.; Macherius, U.; Weltmann, K.-D.; van Helden, J.H.; Schrottke, L.; Grahn, H.T.We report on terahertz (THz) quantum-cascade lasers (QCLs) based on GaAs/AlAs heterostructures, which exhibit single-mode emission at 3.360, 3.921, and 4.745 THz. These frequencies are in close correspondence to fine-structure transitions of Al atoms, N+ ions, and O atoms, respectively. Due to the low electrical pump power of these THz QCLs, they can be operated in a mechanical cryocooler in continuous-wave mode, while a sufficient intrinsic tuning range of more than 5 GHz is maintained. The single-mode operation and the intrinsic tuning range of these THz QCLs allow for the application of these lasers as radiation sources for high-resolution absorption spectroscopy to determine the absolute densities of Al atoms, N+ ions, and O atoms in plasmas.