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Wavelength stabilized high pulse power 48 emitter laser bars for automotive light detection and ranging application

2020, Klehr, Andreas, Liero, Armin, Christopher, Heike, Wenzel, Hans, Maaßdorf, Andre, Della Casa, Pietro, Fricke, Jörg, Ginolas, Arnim, Knigge, Andrea

Diode lasers generating optical pulses with high peak power and lengths in the nanosecond range are key components for light detection and ranging systems, e.g. for autonomous driving and object detection. We present here an internally wavelength stabilized distributed Bragg reflector broad area laser bar with 48 emitters. The vertical structure based on AlGaAs (confinement and cladding layers) and InGaAs (active quantum well) is specifically optimized for wavelength-stabilized pulsed operation, applying a surface Bragg grating with high reflectivity. The bar is electrically driven by a new in-house developed high-speed driver based on GaN transistors providing current pulses with amplitudes of up to 1000 A and a repetition frequency of 10 kHz. The generated 4 ns to 10 ns long optical pulses are nearly rectangular shaped and reach a pulse peak power in excess of 600 Watts at 25 °C. The optical spectrum with a centre wavelength of about 900 nm has a width of 0.15 nm (FWHM) with a side mode suppression ratio > 30 dB. © 2020 IOP Publishing Ltd.

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Low-index quantum-barrier single-pass tapered semiconductor optical amplifiers for efficient coherent beam combining

2020, Albrodt, P., Niemeyer, M., Elattar, M., Hamperl, J., Blume, G., Ginolas, A., Fricke, J., Maaßdorf, A., Georges, P., Lucas-Leclin, G., Paschke, K., Crump, P.

The requirements for coherent combination of high power GaAs-based single-pass tapered amplifiers are studied. Changes to the epitaxial layer structure are shown to bring higher beam quality and hence improved combining efficiency for one fixed device geometry. Specifically, structures with large vertical near field and low wave-guiding from the active region show 10% higher beam quality and coherent combining efficiency than reference devices. As a result, coherent combining efficiency is shown to be limited by beam quality, being directly proportional to the power content in the central lobe across a wide range of devices with different construction. In contrast, changes to the in-plane structure did not improve beam quality or combining efficiency. Although poor beam quality does correlate with increased optical intensities near the input aperture, locating monolithically-integrated absorption regions in these areas did not lead to any performance improvement. However, large area devices with subsequently improved cooling do achieve higher output powers. Phase noise can limit coherent combining, but this is shown to be small and independent of device design. Overall, tapered amplifiers are well suited for high power coherent combining applications. © 2020 The Author(s). Published by IOP Publishing Ltd.