Filters

2019 - 201912020 - 20221

More filters

2021 - 20232
Reset filters

Settings

Has files: Yes × Subject: Electrical transport ×

Search Results

Now showing 1 - 2 of 2
  • Thumbnail Image
    Item
    Antiskyrmions and their electrical footprint in crystalline mesoscale structures of Mn1.4PtSn
    (London : Springer Nature, 2022) Winter, Moritz; Goncalves, Francisco J. T.; Soldatov, Ivan; He, Yangkun; Zúñiga Céspedes, Belén E.; Milde, Peter; Lenz, Kilian; Hamann, Sandra; Uhlarz, Marc; Vir, Praveen; König, Markus; Moll, Philip J. W.; Schlitz, Richard; Goennenwein, Sebastian T. B.; Eng, Lukas M.; Schäfer, Rudolf; Wosnitza, Joachim; Felser, Claudia; Gayles, Jacob; Helm, Toni
    Skyrmionic materials hold the potential for future information technologies, such as racetrack memories. Key to that advancement are systems that exhibit high tunability and scalability, with stored information being easy to read and write by means of all-electrical techniques. Topological magnetic excitations such as skyrmions and antiskyrmions, give rise to a characteristic topological Hall effect. However, the electrical detection of antiskyrmions, in both thin films and bulk samples has been challenging to date. Here, we apply magneto-optical microscopy combined with electrical transport to explore the antiskyrmion phase as it emerges in crystalline mesoscale structures of the Heusler magnet Mn1.4PtSn. We reveal the Hall signature of antiskyrmions in line with our theoretical model, comprising anomalous and topological components. We examine its dependence on the vertical device thickness, field orientation, and temperature. Our atomistic simulations and experimental anisotropy studies demonstrate the link between antiskyrmions and a complex magnetism that consists of competing ferromagnetic, antiferromagnetic, and chiral exchange interactions, not captured by micromagnetic simulations.
  • Thumbnail Image
    Item
    Transition to the quantum hall regime in InAs nanowire cross-junctions
    (Bristol : IOP Publ., 2019) Gooth, Johannes; Borg, Mattias; Schmid, Heinz; Bologna, Nicolas; Rossell, Marta D.; Wirths, Stephan; Moselund, Kirsten; Nielsch, Kornelius; Riel, Heike
    We present a low-temperature electrical transport study on four-terminal ballistic InAs nanowire cross-junctions in magnetic fields aligned perpendicular to the cross-plane. Two-terminal longitudinal conductance measurements between opposing contact terminals reveal typical 1D conductance quantization at zero magnetic field. As the magnetic field is applied, the 1D bands evolve into hybrid magneto-electric sub-levels that eventually transform into Landau levels for the widest nanowire devices investigated (width = 100 nm). Hall measurements in a four-terminal configuration on these devices show plateaus in the transverse Hall resistance at high magnetic fields that scale with (ve 2 /h) -1 . e is the elementary charge, h denotes Planck's constant and v is an integer that coincides with the Landau level index determined from the longitudinal conductance measurements. While the 1D conductance quantization in zero magnetic field is fragile against disorder at the NW surface, the plateaus in the Hall resistance at high fields remain robust as expected for a topologically protected Quantum Hall phase. © 2019 IOP Publishing Ltd.