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- ItemUltra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals(Melville, NY : AIP Publ., 2019) Galazka, Zbigniew; Ganschow, Steffen; Schewski, Robert; Irmscher, Klaus; Klimm, Detlef; Kwasniewski, Albert; Pietsch, Mike; Fiedler, Andreas; Schulze-Jonack, Isabelle; Albrecht, Martin; Schröder, Thomas; Bickermann, MatthiasTruly bulk ZnGa2O4 single crystals were obtained directly from the melt. High melting point of 1900 ± 20 °C and highly incongruent evaporation of the Zn- and Ga-containing species impose restrictions on growth conditions. The obtained crystals are characterized by a stoichiometric or near-stoichiometric composition with a normal spinel structure at room temperature and by a narrow full width at half maximum of the rocking curve of the 400 peak of (100)-oriented samples of 23 arcsec. ZnGa2O4 is a single crystalline spinel phase with the Ga/Zn atomic ratio up to about 2.17. Melt-grown ZnGa2O4 single crystals are thermally stable up to 1100 and 700 °C when subjected to annealing for 10 h in oxidizing and reducing atmospheres, respectively. The obtained ZnGa2O4 single crystals were either electrical insulators or n-type semiconductors/degenerate semiconductors depending on growth conditions and starting material composition. The as-grown semiconducting crystals had the resistivity, free electron concentration, and maximum Hall mobility of 0.002–0.1 Ωcm, 3 × 1018–9 × 1019 cm−3, and 107 cm2 V−1 s−1, respectively. The semiconducting crystals could be switched into the electrically insulating state by annealing in the presence of oxygen at temperatures ≥700 °C for at least several hours. The optical absorption edge is steep and originates at 275 nm, followed by full transparency in the visible and near infrared spectral regions. The optical bandgap gathered from the absorption coefficient is direct with a value of about 4.6 eV, close to that of β-Ga2O3. Additionally, with a lattice constant of a = 8.3336 Å, ZnGa2O4 may serve as a good lattice-matched substrate for magnetic Fe-based spinel films.
- ItemOrders of magnitude loss reduction in photonic bandgap fibers by engineering the core surround(Washington, DC : Soc., 2021) Upendar, S.; Ando, R.F.; Schmidt, M.A.; Weiss, T.We demonstrate how to reduce the loss in photonic bandgap fibers by orders of magnitude by varying the radius of the corner strands in the core surround. As a fundamental working principle we find that changing the corner strand radius can lead to backscattering of light into the fiber core. Selecting an optimal corner strand radius can thus reduce the loss of the fundamental core mode in a specific wavelength range by almost two orders of magnitude when compared to an unmodified cladding structure. Using the optimal corner radius for each transmission window, we observe the low-loss behavior for the first and second bandgaps, with the losses in the second bandgap being even lower than that of the first one. Our approach of reducing the confinement loss is conceptually applicable to all kinds of photonic bandgap fibers including hollow core and all-glass fibers as well as on-chip light cages. Therefore, our concept paves the way to low-loss light guidance in such systems with substantially reduced fabrication complexity.
- ItemElectrochemically deposited nanocrystalline InSb thin films and their electrical properties(Cambridge : Royal Society of Chemistry, 2016) Hnida, K.E.; Bäßler, S.; Mech, J.; Szaciłowski, K.; Socha, R.P.; Gajewska, M.; Nielsch, K.; Przybylski, M.; Sulka, G.D.We present an electrochemical route to prepare nanocrystalline InSb thin films that can be transferred to an industrial scale. The morphology, composition, and crystallinity of the prepared uniform and compact thin films with a surface area of around 1 cm2 were investigated. The essential electrical characteristics such as conductivity, Seebeck coefficient, the type, concentration and mobility of charge carriers have been examined and compared with InSb nanowires obtained in the same system for electrochemical deposition (fixed pulse sequence, temperature, electrolyte composition, and system geometry). Moreover, obtained thin films show much higher band gap energy (0.53 eV) compared to the bulk material (0.17 eV) and InSb nanowires (0.195 eV).
- ItemBulk single crystals and physical properties of β-(AlxGa1-x)2O3(x = 0-0.35) grown by the Czochralski method(Melville, NY : American Inst. of Physics, 2023) Galazka, Zbigniew; Fiedler, Andreas; Popp, Andreas; Ganschow, Steffen; Kwasniewski, Albert; Seyidov, Palvan; Pietsch, Mike; Dittmar, Andrea; Anooz, Saud Bin; Irmscher, Klaus; Suendermann, Manuela; Klimm, Detlef; Chou, Ta-Shun; Rehm, Jana; Schroeder, Thomas; Bickermann, MatthiasWe have systematically studied the growth, by the Czochralski method, and basic physical properties of a 2 cm and 2 in. diameter bulk β-(AlxGa1-x)2O3 single crystal with [Al] = 0-35 mol. % in the melt in 5 mol. % steps. The segregation coefficient of Al in the Ga2O3 melt of 1.1-1.2 results in a higher Al content in the crystals than in the melt. The crystals were also co-doped with Si or Mg. [Al] = 30 mol. % in the melt (33-36 mol. % in the crystals) seems to be a limit for obtaining bulk single crystals of high structural quality suitable for homoepitaxy. The crystals were either semiconducting (no intentional co-dopants with [Al] = 0-30 mol. % and Si-doped with [Al] = 15-20 mol. %), degenerately semiconducting (Si-doped with [Al] ≤ 15 mol. %), or semi-insulating ([Al] ≥ 25 mol. % and/or Mg-doped). The full width at half maximum of the rocking curve was 30-50 arcsec. The crystals showed a linear but anisotropic decrease in all lattice constants and a linear increase in the optical bandgap (5.6 eV for [Al] = 30 mol. %). The room temperature electron mobility at similar free electron concentrations gradually decreases with [Al], presumably due to enhanced scattering at phonons as the result of a larger lattice distortion. In Si co-doped crystals, the scattering is enhanced by ionized impurities. Measured electron mobilities and bandgaps enabled to estimate the Baliga figure of merit for electronic devices.
- ItemCorrection: Electrochemically deposited nanocrystalline InSb thin films and their electrical properties (Journal of Materials Chemistry C (2016) 4 (1345-1350) DOI: 10.1039/C5TC03656A)(London : RSC Publ., 2019) Hnida, K.E.; Bäßler, S.; Mech, J.; Szaciłowski, K.; Socha, R.P.; Gajewska, M.; Nielsch, K.; Przybylski, M.; Sulka, G.D.There was an error in eqn (3) which was reproduced from the literature and used for the interpretation of the results. The calculations (using the equations from an original work from 1987) were done according the correct version of eqn (3) presented below:. (Table Presented). © 2019 The Royal Society of Chemistry.
- ItemQuantum chemical insights into hexaboride electronic structures: correlations within the boron p-orbital subsystem(London : Springer Nature, 2022) Petersen, Thorben; Rößler, Ulrich K.; Hozoi, LiviuThe notion of strong electronic correlations arose in the context of d-metal oxides such as NiO but can be exemplified on systems as simple as the H2 molecule. Here we shed light on correlation effects on B62− clusters as found in MB6 hexaborides and show that the B 2p valence electrons are fairly correlated. B6-octahedron excitation energies computed for CaB6 and YbB6 agree with peak positions found by resonant inelastic x-ray scattering, providing a compelling picture for the latter. Our findings characterize these materials as very peculiar p-electron correlated systems and call for more involved many-body investigations within the whole hexaboride family, both alkaline- and rare-earth compounds, not only for N- but also (N ± 1)-states defining e. g. band gaps.
- ItemStructure of Ni(OH)2 intermediates determines the efficiency of NiO-based photocathodes – a case study using novel mesoporous NiO nanostars(Cambridge : RSC, 2019) Wahyuono, Ruri Agung; Dellith, Andrea; Schmidt, Christa; Dellith, Jan; Ignaszak, Anna; Seyring, Martin; Rettenmayr, Markus; Fize, Jennifer; Artero, Vincent; Chavarot-Kerlidou, Murielle; Dietzek, BenjaminWe report the wet chemical synthesis of mesoporous NiO nanostars (NS) as photocathode material for dye-sensitized solar cells (DSSCs). The growth mechanism of NiO NS as a new morphology of NiO is assessed by TEM and spectroscopic investigations. The NiO NS are obtained upon annealing of preformed β-Ni(OH)2 into pristine NiO with low defect concentrations and favorable electronic configuration for dye sensitization. The NiO NS consist of fibers self-assembled from nanoparticles yielding a specific surface area of 44.9 m2 g-1. They possess a band gap of 3.83 eV and can be sensitized by molecular photosensitizers bearing a range of anchoring groups, e.g. carboxylic acid, phosphonic acid, and pyridine. The performance of NiO NS-based photocathodes in photoelectrochemical application is compared to that of other NiO morphologies, i.e. nanoparticles and nanoflakes, under identical conditions. Sensitization of NiO NS with the benchmark organic dye P1 leads to p-DSSCs with a high photocurrent up to 3.91 mA cm-2 whilst the photoelectrochemical activity of the NiO NS photocathode in aqueous medium in the presence of an irreversible electron acceptor is reflected by generation of a photocurrent up to 23 μA cm-2 © 2019 The Royal Society of Chemistry.