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    Cobalt-catalysed reductive C-H alkylation of indoles using carboxylic acids and molecular hydrogen
    (Cambridge : RSC, 2017) Cabrero-Antonino, Jose R.; Adam, Rosa; Junge, Kathrin; Beller, Matthias
    The direct CH-alkylation of indoles using carboxylic acids is presented for the first time. The catalytic system based on the combination of Co(acac)3 and 1,1,1-tris(diphenylphosphinomethyl)-ethane (Triphos, L1), in the presence of Al(OTf)3 as co-catalyst, is able to perform the reductive alkylation of 2-methyl-1H-indole with a wide range of carboxylic acids. The utility of the protocol was further demonstrated through the C3 alkylation of several substituted indole derivatives using acetic, phenylacetic or diphenylacetic acids. In addition, a careful selection of the reaction conditions allowed to perform the selective C3 alkenylation of some indole derivatives. Moreover, the alkenylation of C2 position of 3-methyl-1H-indole was also possible. Control experiments indicate that the aldehyde, in situ formed from the carboxylic acid hydrogenation, plays a central role in the overall process. This new protocol enables the direct functionalization of indoles with readily available and stable carboxylic acids using a non-precious metal based catalyst and hydrogen as reductant.
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    Excitation of H2 at large internuclear separation: F1∑+g outer well states and continuum resonances
    (London : Taylor & Francis, 2019) Trivikram, T.M.; Salumbides, E.J.; Jungen, Ch.; Ubachs, W.
    Bound and free quantum resonances of molecular hydrogen exhibiting wave-function density at large internuclear separation, (Formula presented.) 4–5 a.u., are excited via multi-step laser spectroscopy. Highly excited vibrational levels of H (Formula presented.) are prepared via two-photon UV-photolysis of H (Formula presented.) S. Subsequent two-photon Doppler-free precision measurements are performed connecting (Formula presented.) levels with (Formula presented.) outer-well levels. Detection and spectroscopic labelling of the quantum states is assisted by further laser excitation into the auto-ionisation continuum employing a third UV-laser. Level energies of high rotational states ((Formula presented.)) in the outer-well state (Formula presented.) are accurately determined. The three-laser study demonstrates a method for probing resonances in the H (Formula presented.) ionisation continuum with wave-function density at large internuclear separation (Formula presented.) 4–5 a.u., large angular momenta J, and energy range 131,100–133,000 cm-1, a hitherto unexplored territory. © 2019, © 2019 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group.
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    Selective cobalt nanoparticles for catalytic transfer hydrogenation of N-heteroarenes
    (Cambridge : RSC, 2017) Chen, Feng; Sahoo, Basudev; Kreyenschulte, Carsten; Lund, Henrik; Zeng, Min; He, Lin; Junge, Kathrin; Beller, Matthias
    Nitrogen modified cobalt catalysts supported on carbon were prepared by pyrolysis of the mixture generated from cobalt(ii) acetate in aqueous solution of melamine or waste melamine resins, which are widely used as industrial polymers. The obtained nanostructured materials catalyze the transfer hydrogenation of N-heteroarenes with formic acid in the absence of base. The optimal Co/Melamine-2@C-700 catalyst exhibits high activity and selectivity for the dehydrogenation of formic acid into molecular hydrogen and carbon dioxide and allows for the reduction of diverse N-heteroarenes including substrates featuring sensitive functional groups.
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    Control of etch pit formation for epitaxial growth of graphene on germanium
    (Melville, NY : American Inst. of Physics, 2019) Becker, Andreas; Wenger, Christian; Dabrowski, Jarek
    Graphene epitaxy on germanium by chemical vapor deposition is a promising approach to integrate graphene into microelectronics, but the synthesis is still accompanied by several challenges such as the high process temperature, the reproducibility of growth, and the formation of etch pits during the process. We show that the substrate cleaning by preannealing in molecular hydrogen, which is crucial to successful and reproducible graphene growth, requires a high temperature and dose. During both substrate cleaning and graphene growth, etch pits can develop under certain conditions and disrupt the synthesis process. We explain the mechanisms how these etch pits may form by preferential evaporation of substrate, how substrate topography is related to the state of the cleaning process, and how etch pit formation during graphene growth can be controlled by choice of a sufficiently high precursor flow. Our study explains how graphene can be grown reliably on germanium at high temperature and thereby lays the foundation for further optimization of the growth process. © 2019 Author(s).