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Has files: Yes × Subject: Nanostructures × WGL Institute: WIAS ×

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    The new ultra high-speed all-optical coherent streak-camera
    (Bristol : IOP Publ., 2015) Arkhipov, R.M.; Arkhipov, M.V.; Egorov, V.S.; Chekhonin, I.A.; Chekhonin, M.A.; Bagayev, S.N.
    In the present paper a new type of ultra high-speed all-optical coherent streak-camera was developed. It was shown that a thin resonant film (quantum dots or molecules) could radiate the angular sequence of delayed ultra-short pulses if a transverse spatial periodic distribution of the laser pump field amplitude has a triangle shape.
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    Micro- and nano-scale engineering and structures shape architecture at nucleation from In-As-Sb-P composition liquid phase on an InAs(100) surface
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2020) Gambaryan, Karen M.; Marquardt, Oliver; Boeck, Torsten; Trampert, Achim
    In this review paper we present results of the growth, characterization and electronic properties of In(As,Sb,P) composition strain-induced micro- and nanostructures. Nucleation is performed from In-As-Sb-P quaternary composition liquid phase in Stranski--Krastanow growth mode using steady-state liquid phase epitaxy. Growth features and the shape transformation of pyramidal islands, lens-shape and ellipsoidal type-II quantum dots (QDs), quantum rings and QD-molecules are under consideration. It is shown that the application of a quaternary In(As,Sb,P) composition wetting layer allows not only more flexible control of lattice-mismatch between the wetting layer and an InAs(100) substrate, but also opens up new possibilities for nanoscale engineering and nanoarchitecture of several types of nanostructures. HR-SEM, AFM, TEM and STM are used for nanostructure characterization. Optoelectronic properties of the grown structures are investigated by FTIR and photoresponse spectra measurements. Using an eight-band $mathbfkcdotmathbfp$ model taking strain and built-in electrostatic potentials into account, the electronic properties of a wide range of InAs$_1-x-y$Sb$_x$P$_y$ QDs and QD-molecules are computed. Two types of QDs mid-infrared photodetectors are fabricated and investigated. It is shown that the incorporation of QDs allows to improve some output device characteristics, in particularly sensitivity, and to broaden the spectral range.