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    Ultrathin positively charged electrode skin for durable anion-intercalation battery chemistries
    ([London] : Nature Publishing Group UK, 2023) Sabaghi, Davood; Wang, Zhiyong; Bhauriyal, Preeti; Lu, Qiongqiong; Morag, Ahiud; Mikhailovia, Daria; Hashemi, Payam; Li, Dongqi; Neumann, Christof; Liao, Zhongquan; Dominic, Anna Maria; Nia, Ali Shaygan; Dong, Renhao; Zschech, Ehrenfried; Turchanin, Andrey; Heine, Thomas; Yu, Minghao; Feng, Xinliang
    The anion-intercalation chemistries of graphite have the potential to construct batteries with promising energy and power breakthroughs. Here, we report the use of an ultrathin, positively charged two-dimensional poly(pyridinium salt) membrane (C2DP) as the graphite electrode skin to overcome the critical durability problem. Large-area C2DP enables the conformal coating on the graphite electrode, remarkably alleviating the electrolyte. Meanwhile, the dense face-on oriented single crystals with ultrathin thickness and cationic backbones allow C2DP with high anion-transport capability and selectivity. Such desirable anion-transport properties of C2DP prevent the cation/solvent co-intercalation into the graphite electrode and suppress the consequent structure collapse. An impressive PF6−-intercalation durability is demonstrated for the C2DP-covered graphite electrode, with capacity retention of 92.8% after 1000 cycles at 1 C and Coulombic efficiencies of > 99%. The feasibility of constructing artificial ion-regulating electrode skins with precisely customized two-dimensional polymers offers viable means to promote problematic battery chemistries.
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    A graphene-based hot electron transistor
    (Washington, DC : American Chemical Society, 2013) Vaziri, S.; Lupina, G.; Henkel, C.; Smith, A.D.; Östling, M.; Dabrowski, J.; Lippert, G.; Mehr, W.; Lemme, M.C.
    We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call graphene base transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the wafer scale with standard silicon technology. The state of the GBTs can be switched by a potential applied to the transistor base, which is made of graphene. Transfer characteristics of the GBTs show ON/OFF current ratios exceeding 104.