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    Does the Processing Method Resulting in Different States of an Interconnected Network of Multiwalled Carbon Nanotubes in Polymeric Blend Nanocomposites Affect EMI Shielding Properties?
    (Washington, DC : ACS Publications, 2018) Pawar, Shital Patangrao; Rzeczkowski, Piotr; Pötschke, Petra; Krause, Beate; Bose, Suryasarathi
    Electromagnetic interference (EMI), an unwanted phenomenon, often affects the reliability of precise electronic circuitry. To prevent this, an effective shielding is prerequisite to protect the electronic devices. In this study, an attempt was made to understand how processing of polymeric blend nanocomposites involving multiwalled carbon nanotubes (MWCNTs) affects the evolving interconnected network structure of MWCNTs and eventually their EMI shielding properties. Thereby, the overall blend morphology and especially the connectivity of the polycarbonate (PC) component, in which the MWCNTs tend to migrate, as well as the perfectness of their migration, and the state of nanotube dispersion are considered. For this purpose, blends of varying composition of PC and poly(methyl methacrylate) were chosen as a model system as they show a phase diagram with lower critical solution temperature type of characteristic. Such blends were processed in two different ways: solution mixing (from the homogeneous state) and melt mixing (in the biphasic state). In both the processes, MWCNTs (3 wt %) were mixed into the blends, and the evolved structures (after phase separation induced by annealing in solution-mixed blends) and the quenched structures (as the blends exit the extruder) were systematically studied using transmission electron microscopy (TEM). Both the set of blends were subjected to the same thermal history, however, under different conditions such as under quiescent conditions (in the case of solution mixing) and under shear (in the case of melt mixing). The electrical volume conductivity and the evolved morphologies of these blend nanocomposites were evaluated and correlated with the measured EMI shielding behavior. The results indicated that irrespective of the type of processing, the MWCNTs localized in the PC component; driven by thermodynamic factors and depending on the blend composition, sea-island, cocontinuous, and phase-inverted structures evolved. Interestingly, the better interconnected network structures of MWCNTs observed using TEM in the solution-mixed samples together with larger nanotube lengths resulted in higher EMI shielding properties (-27 dB at 18 GHz) even if slightly higher electrical volume conductivities were observed in melt-mixed samples. Moreover, the shielding was absorption-driven, facilitated by the dense network of MWCNTs in the PC component of the blends, at any given concentration of nanotubes. Taken together, this study highlights the effects of different blend nanocomposite preparation methods (solution and melt) and the developed morphology and nanotube network structure in MWCNT filled blend nanocomposites on the EMI shielding behavior.
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    Detection of electromagnetic inclusions using topological sensitivity
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2016) Wahab, Abdul; Abbas, Tasawar; Ahmed, Naveed; Zia, Qazi Muhammad Zaigham
    In this article a topological sensitivity framework for far field detection of a diametrically small electromagnetic inclusion is established. The cases of single and multiple measurements of the electric far field scattering amplitude at a fixed frequency are taken into account. The performance of the algorithm is analyzed theoretically in terms of its resolution and sensitivity for locating an inclusion. The stability of the framework with respect to measurement and medium noises is discussed. Moreover, the quantitative results for signal-to-noise ratio are presented. A few numerical results are presented to illustrate the detection capabilities of the proposed framework with single and multiple measurements.
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    Recombination dynamics in (In,Ga)N/GaN heterostructures: Influence of localization and crystal polarity
    (Berlin : Humboldt-Universität zu Berlin, 2018) Feix, Felix Ihbo; Riechert, Henning; Benson, Oliver; O'Reilly, Eoin
    (In,Ga)N/GaN-Leuchtdioden wurden vor mehr als 10 Jahren kommerzialisiert, dennoch ist das Verständnis über den Einfluss von Lokalisierung auf die Rekombinationsdynamik in den (In,Ga)N/GaN Quantengräben (QG) unvollständig. In dieser Arbeit nutzen wir die temperaturabhängige stationäre und zeitaufgelöste Spektroskopie der Photolumineszenz (PL), um diesen Einfluss in einer typischen Ga-polaren, planaren (In,Ga)N/GaN-QG-Struktur zu untersuchen. Zusätzlich dehnen wir unsere Studie auf N-polare, axiale (In,Ga)N/GaN Quantumscheiben, nichtpolare Kern/Mantel GaN/(In,Ga)N µ-Drähte und Ga-polare, submonolage InN/GaN Übergitter aus. Während wir einen einfach exponentiellen Abfall der PL-Intensität in den nichtpolaren QG beobachten (Hinweise auf die Rekombination von Exzitonen), folgen die PL-Transienten in polaren QG asymptotisch einem Potenzgesetz. Dieses Potenzgesetz weist auf eine Rekombination zwischen individuell lokalisierten, räumlich getrennten Elektronen und Löchern hin. Für einen solchen Zerfall kann keine eindeutige PL-Lebensdauer definiert werden, was die Schätzung der internen Quanteneffizienz und die Bestimmung einer Diffusionslänge erschwert. Um nützliche Rekombinationsparameter und Diffusivitäten für die polaren QG zu extrahieren, analysieren wir die PL-Transienten mit positionsabhängigen Diffusionsreaktionsgleichungen, die durch einen Monte-Carlo-Algorithmus effizient gelöst werden. Aus diesen Simulationen ergibt sich, dass das asymptotische Potenzgesetz auch bei effizienter nichtstrahlender Rekombination (z. B. in den Nanodrähten) erhalten bleibt. Zudem stellen wir fest, dass sich die InN/GaN Übergitter elektronisch wie konventionelle (In,Ga)N/GaN QG verhalten, aber mit starkem, thermisch aktiviertem nichtstrahlenden Kanal. Des Weiteren zeigen wir, dass das Verhältnis von Lokalisierungs- und Exzitonenbindungsenergie bestimmt, dass die Rekombination entweder durch das Tunneln von Elektronen und Löchern oder durch den Zerfall von Exzitonen dominiert wird.