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Type: Article × Version: publishedVersion × Publisher: Washington, DC : ACS Publications × WGL Institute: IHP ×

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    Electron Transport across Vertical Silicon/MoS2/Graphene Heterostructures: Towards Efficient Emitter Diodes for Graphene Base Hot Electron Transistors
    (Washington, DC : ACS Publications, 2020) Belete, Melkamu; Engström, Olof; Vaziri, Sam; Lippert, Gunther; Lukosius, Mindaugas; Kataria, Satender; Lemme, Max C.
    Heterostructures comprising silicon, molybdenum disulfide (MoS2), and graphene are investigated with respect to the vertical current conduction mechanism. The measured current-voltage (I-V) characteristics exhibit temperature-dependent asymmetric current, indicating thermally activated charge carrier transport. The data are compared and fitted to a current transport model that confirms thermionic emission as the responsible transport mechanism across devices. Theoretical calculations in combination with the experimental data suggest that the heterojunction barrier from Si to MoS2 is linearly temperature-dependent for T = 200-300 K with a positive temperature coefficient. The temperature dependence may be attributed to a change in band gap difference between Si and MoS2, strain at the Si/MoS2 interface, or different electron effective masses in Si and MoS2, leading to a possible entropy change stemming from variation in density of states as electrons move from Si to MoS2. The low barrier formed between Si and MoS2 and the resultant thermionic emission demonstrated here make the present devices potential candidates as the emitter diode of graphene base hot electron transistors for future high-speed electronics. Copyright © 2020 American Chemical Society.
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    Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy
    (Washington, DC : ACS Publications, 2020) Stock, Taylor J.Z.; Warschkow, Oliver; Constantinou, Procopios C.; Li, Juerong; Fearn, Sarah; Crane, Eleanor; Hofmann, Emily V.S.; Kölker, Alexander; McKenzie, David R.; Schofield, Steven R.; Curson, Neil J.
    Over the past two decades, prototype devices for future classical and quantum computing technologies have been fabricated by using scanning tunneling microscopy and hydrogen resist lithography to position phosphorus atoms in silicon with atomic-scale precision. Despite these successes, phosphine remains the only donor precursor molecule to have been demonstrated as compatible with the hydrogen resist lithography technique. The potential benefits of atomic-scale placement of alternative dopant species have, until now, remained unexplored. In this work, we demonstrate the successful fabrication of atomic-scale structures of arsenic-in-silicon. Using a scanning tunneling microscope tip, we pattern a monolayer hydrogen mask to selectively place arsenic atoms on the Si(001) surface using arsine as the precursor molecule. We fully elucidate the surface chemistry and reaction pathways of arsine on Si(001), revealing significant differences to phosphine. We explain how these differences result in enhanced surface immobilization and in-plane confinement of arsenic compared to phosphorus, and a dose-rate independent arsenic saturation density of 0.24 ± 0.04 monolayers. We demonstrate the successful encapsulation of arsenic delta-layers using silicon molecular beam epitaxy, and find electrical characteristics that are competitive with equivalent structures fabricated with phosphorus. Arsenic delta-layers are also found to offer confinement as good as similarly prepared phosphorus layers, while still retaining >80% carrier activation and sheet resistances of <2 kω/square. These excellent characteristics of arsenic represent opportunities to enhance existing capabilities of atomic-scale fabrication of dopant structures in silicon, and may be important for three-dimensional devices, where vertical control of the position of device components is critical. Copyright © 2020 American Chemical Society.
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    CMOS-Compatible Bias-Tunable Dual-Band Detector Based on GeSn/Ge/Si Coupled Photodiodes
    (Washington, DC : ACS Publications, 2021) Talamas Simola, Enrico; Kiyek, Vivien; Ballabio, Andrea; Schlykow, Viktoria; Frigerio, Jacopo; Zucchetti, Carlo; De Iacovo, Andrea; Colace, Lorenzo; Yamamoto, Yuji; Capellini, Giovanni; Grützmacher, Detlev; Buca, Dan; Isella, Giovanni
    Infrared (IR) multispectral detection is attracting increasing interest with the rising demand for high spectral sensitivity, room temperature operation, CMOS-compatible devices. Here, we present a two-terminal dual-band detector, which provides a bias-switchable spectral response in two distinct IR bands. The device is obtained from a vertical GeSn/Ge/Si stack, forming a double junction n-i-p-i-n structure, epitaxially grown on a Si wafer. The photoresponse can be switched by inverting the bias polarity between the near and the short-wave IR bands, with specific detectivities of 1.9 × 1010 and 4.0 × 109 cm·(Hz)1/2/W, respectively. The possibility of detecting two spectral bands with the same pixel opens up interesting applications in the field of IR imaging and material recognition, as shown in a solvent detection test. The continuous voltage tuning, combined with the nonlinear photoresponse of the detector, enables a novel approach to spectral analysis, demonstrated by identifying the wavelength of a monochromatic beam. © 2021 The Authors. Published by American Chemical Society.