2020, Yang, P., Zhang, L., Kang, D.J., Strahl, R., Kraus, T.

The direct printing of microscale quantum dot light-emitting diodes (QLEDs) is a cost-effective alternative to the placement of pre-formed LEDs. The quality of printed QLEDs currently is limited by nonuniformities in droplet formation, wetting, and drying during inkjet printing. Here, optimal ink formulation which can suppress nonuniformities at the pixel and array levels is demonstrated. A solvent mixture is used to tune the ejected droplet size, ensure wetting, and provoke Marangoni flows that prevent coffee stain rings. Arrays of green QLED devices are printed at a resolution of 500 pixels in.−1 with a maximum luminance of ≈3000 cd m−2 and a peak current efficiency of 2.8 cd A−1. The resulting array quality is sufficient to print displays at state-of-the-art resolutions.

2021, Gammer, Christoph, Rentenberger, Christian, Beitelschmidt, Denise, Minor, Andrew M., Eckert, Jürgen

Bulk metallic glasses (BMGs) have attracted wide interest, but their successful application is hindered by their low ductility at room temperature. Therefore, the use of composites of a BMG matrix with crystalline secondary phases has been proposed to overcome this drawback. In the present work we demonstrate the fabrication of a tailored BMG nanocomposite containing a high density of monodisperse nanocrystals with a size of around 20 nm using a combination of mechanical and thermal treatment of Cu36Zr48Al8Ag8 well below the crystallization temperature. Direct observations of the interaction of the nanocrystals with a shear band during in situ deformation in a transmission electron microscope demonstrate that the achieved nanocomposite has the potential to inhibit catastrophic fracture in tension. This demonstrates that a sufficient number of nanoscale structural heterogeneities can be a route towards BMG composites with superior mechanical properties.

2012, Plumhof, J.D., Trotta, R., Rastelli, A., Schmidt, O.G.

Deterministic sources of polarization entangled photon pairs on demand are considered as important building blocks for quantum communication technology. It has been demonstrated that semiconductor quantum dots (QDs), which exhibit a sufficiently small excitonic fine structure splitting (FSS) can be used as triggered, on-chip sources of polarization entangled photon pairs. As-grown QDs usually do not have the required values of the FSS, making the availability of post-growth tuning techniques highly desired. This article reviews the effect of different post-growth treatments and external fields on the FSS such as thermal annealing, magnetic fields, the optical Stark effect, electric fields, and anisotropic stress. As a consequence of the tuning of the FSS, for some tuning techniques a rotation of the polarization of the emitted light is observed. The joint modification of polarization orientation and FSS can be described by an anticrossing of the bright excitonic states.

2018, Weiß, Matthias, Hörner, Andreas L., Zallo, Eugenio, Atkinson, Paola, Rastelli, Armando, Schmidt, Oliver G., Wixforth, Achim, Krenner, Hubert J.

Wide-passband interdigital transducers are employed to establish a stable phase lock between a train of laser pulses emitted by a mode-locked laser and a surface acoustic wave generated electrically by the transducer. The transducer design is based on a multiharmonic split-finger architecture for the excitation of a fundamental surface acoustic wave and a discrete number of its overtones. Simply by introducing a variation of the transducer's periodicity p, a frequency chirp is added. This combination results in wide frequency bands for each harmonic. The transducer's conversion efficiency from the electrical to the acoustic domain is characterized optomechanically using single quantum dots acting as nanoscale pressure sensors. The ability to generate surface acoustic waves over a wide band of frequencies enables advanced acousto-optic spectroscopy using mode-locked lasers with fixed repetition rate. Stable phase locking between the electrically generated acoustic wave and the train of laser pulses is confirmed by performing stroboscopic spectroscopy on a single quantum dot at a frequency of 320 MHz. Finally, the dynamic spectral modulation of the quantum dot is directly monitored in the time domain combining stable phase-locked optical excitation and time-correlated single-photon counting. The demonstrated scheme will be particularly useful for the experimental implementation of surface-acoustic-wave-driven quantum gates of optically addressable qubits or collective quantum states or for multicomponent Fourier synthesis of tailored nanomechanical waveforms.

2018, Xu, X., Prüfer, T., Wolf, D., Engelmann, H.-J., Bischoff, L., Hübner, R., Heinig, K.-H., Möller, W., Facsko, S., von Borany, J., Hlawacek, G.

For future nanoelectronic devices - such as room-temperature single electron transistors - the site-controlled formation of single Si nanocrystals (NCs) is a crucial prerequisite. Here, we report an approach to fabricate single Si NCs via medium-energy Si+ or Ne+ ion beam mixing of Si into a buried SiO2 layer followed by thermally activated phase separation. Binary collision approximation and kinetic Monte Carlo methods are conducted to gain atomistic insight into the influence of relevant experimental parameters on the Si NC formation process. Energy-filtered transmission electron microscopy is performed to obtain quantitative values on the Si NC size and distribution in dependence of the layer stack geometry, ion fluence and thermal budget. Employing a focused Ne+ beam from a helium ion microscope, we demonstrate site-controlled self-assembly of single Si NCs. Line irradiation with a fluence of 3000 Ne+/nm2 and a line width of 4 nm leads to the formation of a chain of Si NCs, and a single NC with 2.2 nm diameter is subsequently isolated and visualized in a few nanometer thin lamella prepared by a focused ion beam (FIB). The Si NC is centered between the SiO2 layers and perpendicular to the incident Ne+ beam.

2018, Lazić, S., Chernysheva, E., Hernández-Mínguez, A., Santos, P.V., van der Meulen, H.P.

On-chip quantum information processing requires controllable quantum light sources that can be operated on-demand at high-speeds and with the possibility of in-situ control of the photon emission wavelength and its optical polarization properties. Here, we report on the dynamic control of the optical emission from core-shell GaN/InGaN nanowire (NW) heterostructures using radio frequency surface acoustic waves (SAWs). The SAWs are excited on the surface of a piezoelectric lithium niobate crystal equipped with a SAW delay line onto which the NWs were mechanically transferred. Luminescent quantum dot (QD)-like exciton localization centers induced by compositional fluctuations within the InGaN nanoshell were identified using stroboscopic micro-photoluminescence (micro-PL) spectroscopy. They exhibit narrow and almost fully linearly polarized emission lines in the micro-PL spectra and a pronounced anti-bunching signature of single photon emission in the photon correlation experiments. When the nanowire is perturbed by the propagating SAW, the embedded QD is periodically strained and its excitonic transitions are modulated by the acousto-mechanical coupling, giving rise to a spectral fine-tuning within a ~1.5 meV bandwidth at the acoustic frequency of ~330 MHz. This outcome can be further combined with spectral detection filtering for temporal control of the emitted photons. The effect of the SAW piezoelectric field on the QD charge population and on the optical polarization degree is also observed. The advantage of the acousto-optoelectric over other control schemes is that it allows in-situ manipulation of the optical emission properties over a wide frequency range (up to GHz frequencies).

2019, Hnida, K.E., Bäßler, S., Mech, J., Szaciłowski, K., Socha, R.P., Gajewska, M., Nielsch, K., Przybylski, M., Sulka, G.D.

There was an error in eqn (3) which was reproduced from the literature and used for the interpretation of the results. The calculations (using the equations from an original work from 1987) were done according the correct version of eqn (3) presented below:. (Table Presented). © 2019 The Royal Society of Chemistry.

2019, Höfer, B., Olbrich, F., Kettler, J., Paul, M., Höschele, J., Jetter, M., Portalupi, S.L., Ding, F., Michler, P., Schmidt, O.G.

We report on optical investigations of MOVPE-grown InGaAs/GaAs quantum dots emitting at the telecom O-band that were integrated onto uniaxial piezoelectric actuators. This promising technique, which does not degrade the emission brightness of the quantum emitters, enables us to tune the quantum dot emission wavelengths and their fine-structure splitting. By spectrally analyzing the emitted light with respect to its polarization, we are able to demonstrate the cancelation of the fine structure splitting within the experimental resolution limit. This work represents an important step towards the high-yield generation of entangled photon pairs at telecommunication wavelength, together with the capability to precisely tune the emission to target wavelengths.

2016, Hnida, K.E., Bäßler, S., Mech, J., Szaciłowski, K., Socha, R.P., Gajewska, M., Nielsch, K., Przybylski, M., Sulka, G.D.

We present an electrochemical route to prepare nanocrystalline InSb thin films that can be transferred to an industrial scale. The morphology, composition, and crystallinity of the prepared uniform and compact thin films with a surface area of around 1 cm2 were investigated. The essential electrical characteristics such as conductivity, Seebeck coefficient, the type, concentration and mobility of charge carriers have been examined and compared with InSb nanowires obtained in the same system for electrochemical deposition (fixed pulse sequence, temperature, electrolyte composition, and system geometry). Moreover, obtained thin films show much higher band gap energy (0.53 eV) compared to the bulk material (0.17 eV) and InSb nanowires (0.195 eV).

2020, Pregnolato, T., Chu, X.-L., Schröder, T., Schott, R., Wieck, A.D., Ludwig, A., Lodahl, P., Rotenberg, N.

The capability to embed self-assembled quantum dots (QDs) at predefined positions in nanophotonic structures is key to the development of complex quantum-photonic architectures. Here, we demonstrate that QDs can be deterministically positioned in nanophotonic waveguides by pre-locating QDs relative to a global reference frame using micro-photoluminescence (μPL) spectroscopy. After nanofabrication, μPL images reveal misalignments between the central axis of the waveguide and the embedded QD of only (9 ± 46) nm and (1 ± 33) nm for QDs embedded in undoped and doped membranes, respectively. A priori knowledge of the QD positions allows us to study the spectral changes introduced by nanofabrication. We record average spectral shifts ranging from 0.1 nm to 1.1 nm, indicating that the fabrication-induced shifts can generally be compensated by electrical or thermal tuning of the QDs. Finally, we quantify the effects of the nanofabrication on the polarizability, the permanent dipole moment, and the emission frequency at vanishing electric field of different QD charge states, finding that these changes are constant down to QD-surface separations of only 70 nm. Consequently, our approach deterministically integrates QDs into nanophotonic waveguides whose light-fields contain nanoscale structure and whose group index varies at the nanometer level. © 2020 Author(s).