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Type: Article × Subject: Terahertz ×

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    Proximity array device: a novel photon detector working in long wavelengths
    (Basel : MDPI AG, 2020) Rezvani, S. Javad; Di Gioacchino, Daniele; Gatti, Claudio; Ligi, Carlo; Guidi, Mariangela Cestelli; Cibella, Sara; Fretto, Matteo; Poccia, Nicola; Lupi, Stefano; Marcelli, Augusto
    We present here an innovative photon detector based on the proximity junction array device (PAD) working at long wavelengths. We show that the vortex dynamics in PAD undergoes a transition from a Mott insulator to a vortex metal state by application of an external magnetic field. The PAD also evidences a Josephson I-V characteristic with the external field dependent tunneling current. At high applied currents, we observe a dissipative regime in which the vortex dynamics is dominated by the quasi-particle contribution from the normal metal. The PAD has a relatively high photo-response even at frequencies below the expected characteristic frequency while, its superconducting properties such as the order parameter and the Josephson characteristic frequency can be modulated via external fields to widen the detection band. This device represents a promising and reliable candidate for new high-sensitivity long-wavelength detectors. © 2020 by the authors. Licensee MDPI, Basel, Switzerland.
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    Passive Detection and Imaging of Human Body Radiation Using an Uncooled Field-Effect Transistor-Based THz Detector
    (Basel : MDPI, 2020) Čibiraitė-Lukenskienė, Dovilė; Ikamas, Kęstutis; Lisauskas, Tautvydas; Krozer, Viktor; Roskos, Hartmut G.; Lisauskas, Alvydas
    This work presents, to our knowledge, the first completely passive imaging with human-body-emitted radiation in the lower THz frequency range using a broadband uncooled detector. The sensor consists of a Si CMOS field-effect transistor with an integrated log-spiral THz antenna. This THz sensor was measured to exhibit a rather flat responsivity over the 0.1–1.5-THz frequency range, with values√ of the optical responsivity and noise-equivalent power of around 40 mA/W and 42 pW/ Hz, respectively. These values are in good agreement with simulations which suggest an even broader flat responsivity range exceeding 2.0 THz. The successful imaging demonstrates the impressive thermal sensitivity which can be achieved with such a sensor. Recording of a 2.3 × 7.5-cm2-sized image of the fingers of a hand with a pixel size of 1 mm2 at a scanning speed of 1 mm/s leads to a signal-to-noise ratio of 2 and a noise-equivalent temperature difference of 4.4 K. This approach shows a new sensing approach with field-effect transistors as THz detectors which are usually used for active THz detection. © 2020 by the authors. Licensee MDPI, Basel, Switzerland.