26 results
Search Results
Now showing 1 - 10 of 26
- ItemNanoscale Mapping of the 3D Strain Tensor in a Germanium Quantum Well Hosting a Functional Spin Qubit Device(Washington, DC : Soc., 2023) Corley-Wiciak, Cedric; Richter, Carsten; Zoellner, Marvin H.; Zaitsev, Ignatii; Manganelli, Costanza L.; Zatterin, Edoardo; Schülli, Tobias U.; Corley-Wiciak, Agnieszka A.; Katzer, Jens; Reichmann, Felix; Klesse, Wolfgang M.; Hendrickx, Nico W.; Sammak, Amir; Veldhorst, Menno; Scappucci, Giordano; Virgilio, Michele; Capellini, GiovanniA strained Ge quantum well, grown on a SiGe/Si virtual substrate and hosting two electrostatically defined hole spin qubits, is nondestructively investigated by synchrotron-based scanning X-ray diffraction microscopy to determine all its Bravais lattice parameters. This allows rendering the three-dimensional spatial dependence of the six strain tensor components with a lateral resolution of approximately 50 nm. Two different spatial scales governing the strain field fluctuations in proximity of the qubits are observed at <100 nm and >1 μm, respectively. The short-ranged fluctuations have a typical bandwidth of 2 × 10-4 and can be quantitatively linked to the compressive stressing action of the metal electrodes defining the qubits. By finite element mechanical simulations, it is estimated that this strain fluctuation is increased up to 6 × 10-4 at cryogenic temperature. The longer-ranged fluctuations are of the 10-3 order and are associated with misfit dislocations in the plastically relaxed virtual substrate. From this, energy variations of the light and heavy-hole energy maxima of the order of several 100 μeV and 1 meV are calculated for electrodes and dislocations, respectively. These insights over material-related inhomogeneities may feed into further modeling for optimization and design of large-scale quantum processors manufactured using the mainstream Si-based microelectronics technology.
- ItemRoles of hydrogenation, annealing and field in the structure and magnetic entropy change of Tb-based bulk metallic glasses(New York : American Institute of Physics, 2013) Luo, Qiang; Schwarz, Björn; Mattern, Norbert; Shen, Jun; Eckert, JürgenThe reduction of open-volume regions in Tb-based metallic glass (MG) by annealing and hydrogen charging was found to rearrange the atomic structure and tune the magnetic behaviors. After crystallization, the magnetic structure and magnetic entropy change (MEC) alters due to the structural transformation, and a plateau-like-MEC behavior can be obtained. The hydrogen concentration after charging at 1mA/cm2 for 576 h reaches as high as 3290 w-ppm. The magnetization behavior and the MEC change due to the modification of the exchange interaction and the random magnetic anisotropy (RMA) upon hydrogenation. At low temperatures, irreversible positive MEC was obtained, which is related to the internal entropy production. The RMA-to-exchange ratio acts as a switch to control the irreversible entropy production channel and the reversible entropy transfer channel. The field dependence of the MEC is discussed in term of the competition among Zeeman energy, exchange interaction and RMA.
- ItemDiffraction at GaAs/Fe3Si core/shell nanowires: The formation of nanofacets(Cambridge : arXiv, 2016) Jenichen, B.; Hanke, M.; Hilse, M.; Herfort, J.; Trampert, A.; Erwin, S.C.GaAs/Fe3Si core/shell nanowire structures were fabricated by molecular-beam epitaxy on oxidized Si(111) substrates and investigated by synchrotron x-ray diffraction. The surfaces of the Fe3Si shells exhibit nanofacets. These facets consist of well pronounced Fe3Si{111} planes. Density functional theory reveals that the Si-terminated Fe3Si{111} surface has the lowest energy in agreement with the experimental findings. We can analyze the x-ray diffuse scattering and diffraction of the ensemble of nanowires avoiding the signal of the substrate and poly-crystalline films located between the wires. Fe3Si nanofacets cause streaks in the x-ray reciprocal space map rotated by an azimuthal angle of 30° compared with those of bare GaAs nanowires. In the corresponding TEM micrograph the facets are revealed only if the incident electron beam is oriented along [1 1 ̄ 0] in accordance with the x-ray results. Additional maxima in the x-ray scans indicate the onset of chemical reactions between Fe3Si shells and GaAs cores occurring at increased growth temperatures.
- ItemTSFZ Growth of Eu-Substituted Large-Size LSCO Crystals(Basel : MDPI, 2022) Voloshyna, Olesia; Romaka, Vitaliy V.; Karmakar, Koushik ;Seiro, Silvia; Maljuk, Andrey; Büchner, BerndThe travelling solvent floating zone (TSFZ) growth of Eu-substituted LSCO (La1.81−xEuxSr0.19CuO4, with nominal x = 0 ÷ 0.4) single crystals was systematically explored for the first time. The substitution of La with Eu considerably decreased the decomposition temperature. Optimal growth parameters were found to be: oxygen pressure 9.0–9.5 bars; Eu-free CuO-poor solvent (66 mol% CuO) with a molar ratio of La2O3:SrCO3:CuO = 4:4.5:16.5 and growth rate 0.6 mm/hour. The obtained single crystals were characterized with optical polarized microscopy, X-ray diffraction and energy-dispersive X-ray spectroscopy analysis. The solubility of Eu in LSCO appeared to be limited to x~0.36–0.38 under the used conditions. The substitution of La3+ with smaller Eu3+ ions led to a structural transition from tetragonal with space group I4/mmm for La1.81Sr0.19CuO4 (x = 0) to orthorhombic with space group Fmmm for La1.81−xSr0.19EuxCuO4 (x = 0.2, 0.3, 0.4), and to a substantial shrinking of the c-axis from 13.2446 Å (x = 0.0) to 13.1257 Å (x = 0.4). Such structural changes were accompanied by a dramatic decrease in the superconducting critical temperature, Tc, from 29.5 K for x = 0 to 13.8 K for 0.2. For x ≥ 0.3, no superconductivity was detected down to 4 K.
- ItemPAH/PAH(CF3)n Donor/Acceptor Charge-Transfer Complexes in Solution and in Solid-State Co-Crystals(Weinheim : Wiley-VCH, 2019) Castro, Karlee P.; Bukovsky, Eric V.; Kuvychko, Igor V.; DeWeerd, Nicholas J.; Chen, Yu-Sheng; Deng, Shihu H.M.; Wang, Xue-Bin; Popov, Alexey A.; Strauss, Steven H.; Boltalina, Olga V.A solution, solid-state, and computational study is reported of polycyclic aromatic hydrocarbon PAH/PAH(CF3)n donor/acceptor (D/A) charge-transfer complexes that involve six PAH(CF3)n acceptors with known gas-phase electron affinities that range from 2.11(2) to 2.805(15) eV and four PAH donors, including seven CT co-crystal X-ray structures that exhibit hexagonal arrays of mixed π-stacks with 1/1, 1/2, or 2/1 D/A stoichiometries (PAH=anthracene, azulene, coronene, perylene, pyrene, triphenylene; n=5, 6). These are the first D/A CT complexes with PAH(CF3)n acceptors to be studied in detail. The nine D/A combinations were chosen to allow several structural and electronic comparisons to be made, providing new insights about controlling D/A interactions and the structures of CT co-crystals. The comparisons include, among others, CT complexes of the same PAH(CF3)n acceptor with four PAH donors and CT complexes of the same donor with four PAH(CF3)n acceptors. All nine CT complexes exhibit charge-transfer bands in solution with λmax between 467 and 600 nm. A plot of E(λmax) versus [IE(donor)−EA(acceptor)] for the nine CT complexes studied is linear with a slope of 0.72±0.03 eV eV−1. This plot is the first of its kind for CT complexes with structurally related donors and acceptors for which precise experimental gas-phase IEs and EAs are known. It demonstrates that conclusions based on the common assumption that the slope of a CT E(λmax) versus [IE−EA] plot is unity may be incorrect in at least some cases and should be reconsidered. © 2019 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim
- ItemInfluence of substrate dimensionality on the growth mode of epitaxial 3D-bonded GeTe thin films: From 3D to 2D growth(Amsterdam [u.a.] : Elsevier Science, 2019) Hilmi, Isom; Lotnyk, Andriy; Gerlach, Jürgen W.; Schumacher, Philipp; Rauschenbach, BerndThe pseudo-binary line of Sb2Te3-GeTe contains alloys featuring different crystalline characteristics from two-dimensionally (2D-) bonded Sb2Te3 to three-dimensionally (3D-) bonded GeTe. Here, the growth scenario of 3D-bonded GeTe is investigated by depositing epitaxial GeTe thin films on Si(111) and Sb2Te3-buffered Si(111) substrates using pulsed laser deposition (PLD). GeTe thin films were grown in trigonal structure within a temperature window for epitaxial growth of 210–270 °C on unbuffered Si(111) substrates. An unconventional growth onset was characterized by the formation of a thin amorphous GeTe layer. Nonetheless, the as-grown film is found to be crystalline. Furthermore, by employing a 2D-bonded Sb2Te3 thin film as a seeding layer on Si(111), a 2D growth of GeTe is harnessed. The epitaxial window can substantially be extended especially towards lower temperatures down to 145 °C. Additionally, the surface quality is significantly improved. The inspection of the local structure of the epitaxial films reveals the presence of a superposition of twinned domains, which is assumed to be an intrinsic feature of such thin films. This work might open a way for an improvement of an epitaxy of a 3D-bonded material on a highly-mismatched substrate (e.g. Si (111)) by employing a 2D-bonded seeding layer (e.g. Sb2Te3).
- ItemKeratin homogeneity in the tail feathers of Pavo cristatus and Pavo cristatus mut. alba(San Diego, Calif. : Elsevier, 2010) Pabisch, S.; Puchegger, S.; Kirchner, H.O.K.; Weiss, I.M.; Peterlik, H.The keratin structure in the cortex of peacocks' feathers is studied by X-ray diffraction along the feather, from the calamus to the tip. It changes considerably over the first 5. cm close to the calamus and remains constant for about 1. m along the length of the feather. Close to the tip, the structure loses its high degree of order. We attribute the X-ray patterns to a shrinkage of a cylindrical arrangement of β-sheets, which is not fully formed initially. In the final structure, the crystalline beta-cores are fixed by the rest of the keratin molecule. The hydrophobic residues of the beta-core are locked into a zip-like arrangement. Structurally there is no difference between the blue and the white bird. © 2010 Elsevier Inc.
- ItemSample chamber for synchrotron based in-situ X-ray diffraction experiments under electric fields and temperatures between 100 K and 1250 K(Chester : IUCr, 2021) Nentwich, Melanie; Weigel, Tina; Richter, Carsten; Stöcker, Hartmut; Mehner, Erik; Jachalke, Sven; Novikov, Dmitri V.; Zschornak, Matthias; Meyer, Dirk C.Many scientific questions require X-ray experiments conducted at varying temperatures, sometimes combined with the application of electric fields. Here, a customized sample chamber developed for beamlines P23 and P24 of PETRA III at DESY to suit these demands is presented. The chamber body consists mainly of standard vacuum parts housing the heater/cooler assembly supplying a temperature range of 100 K to 1250 K and an xyz manipulator holding an electric contact needle for electric measurements at both high voltage and low current. The chamber is closed by an exchangeable hemispherical dome offering all degrees of freedom for single-crystal experiments within one hemisphere of solid angle. The currently available dome materials (PC, PS, PEEK polymers) differ in their absorption and scattering characteristics, with PEEK providing the best overall performance. The article further describes heating and cooling capabilities, electric characteristics, and plans for future upgrades of the chamber. Examples of applications are discussed.
- ItemWafer-level uniformity of atomic-layer-deposited niobium nitride thin films for quantum devices(New York, NY : Inst., 2021) Knehr, Emanuel; Ziegler, Mario; Linzen, Sven; Ilin, Konstantin; Schanz, Patrick; Plentz, Jonathan; Diegel, Marco; Schmidt, Heidemarie; Il’iche, Evgeni; Siegel, MichaelSuperconducting niobium nitride thin films are used for a variety of photon detectors, quantum devices, and superconducting electronics. Most of these applications require highly uniform films, for instance, when moving from single-pixel detectors to arrays with a large active area. Plasma-enhanced atomic layer deposition (ALD) of superconducting niobium nitride is a feasible option to produce high-quality, conformal thin films and has been demonstrated as a film deposition method to fabricate superconducting nanowire single-photon detectors before. Here, we explore the property spread of ALD-NbN across a 6-in. wafer area. Over the equivalent area of a 2-in. wafer, we measure a maximum deviation of 1% in critical temperature and 12% in switching current. Toward larger areas, structural characterizations indicate that changes in the crystal structure seem to be the limiting factor rather than film composition or impurities. The results show that ALD is suited to fabricate NbN thin films as a material for large-area detector arrays and for new detector designs and devices requiring uniform superconducting thin films with precise thickness control.
- ItemHigh-resolution characterization of the forbidden Si 200 and Si 222 reflections(Chester : International Union of Crystallography, 2015) Zaumseil, P.The occurrence of the basis-forbidden Si 200 and Si 222 reflections in specular X-ray diffraction !–2 scans is investigated in detail as a function of the inplane sample orientation. This is done for two different diffractometer types with low and high angular divergence perpendicular to the diffraction plane. It is shown that the reflections appear for well defined conditions as a result of multiple diffraction, and not only do the obtained peaks vary in intensity but additional features like shoulders or even subpeaks may occur within a 2 range of about 2.5 . This has important consequences for the detection and verification of layer peaks in the corresponding angular range.
- «
- 1 (current)
- 2
- 3
- »