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    Numerical methods for the simulation of a corrosion model in a nuclear waste deep repository
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2010) Batallion, Christian; Bouchon, Francois; Chainais-Hillairet, Claire; Fuhrmann, Jürgen; Hoarau, Emma; Touzani, Rachid
    Literaturverz. In this paper, we design numerical methods for a PDE system arising in corrosion modelling. This system describes the evolution of a dense oxide layer. It is based on a drift-diffusion system and includes moving boundary equations. The choice of the numerical methods is justified by a stability analysis and by the study of their numerical performance. Finally, numerical experiments with real-life data shows the efficiency of the developed methods.
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    Mathematical modeling of semiconductors: From quantum mechanics to devices
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Kantner, Markus; Mielke, Alexander; Mittnenzweig, Markus; Rotundo, Nella
    We discuss recent progress in the mathematical modeling of semiconductor devices. The central result of this paper is a combined quantum-classical model that self-consistently couples van Roosbroeck's drift-diffusion system for classical charge transport with a Lindblad-type quantum master equation. The coupling is shown to obey fundamental principles of non-equilibrium thermodynamics. The appealing thermodynamic properties are shown to arise from the underlying mathematical structure of a damped Hamitlonian system, which is an isothermal version of so-called GENERIC systems. The evolution is governed by a Hamiltonian part and a gradient part involving a Poisson operator and an Onsager operator as geoemtric structures, respectively. Both parts are driven by the conjugate forces given in terms of the derivatives of a suitable free energy.