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    Disruptive events in high-density cellular networks
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2018) Keeler, Paul; Jahnel, Benedikt; Maye, Oliver; Aschenbach, Daniel; Brzozowski, Marcin
    Stochastic geometry models are used to study wireless networks, particularly cellular phone networks, but most of the research focuses on the typical user, often ignoring atypical events, which can be highly disruptive and of interest to network operators. We examine atypical events when a unexpected large proportion of users are disconnected or connected by proposing a hybrid approach based on ray launching simulation and point process theory. This work is motivated by recent results [12] using large deviations theory applied to the signal-to-interference ratio. This theory provides a tool for the stochastic analysis of atypical but disruptive events, particularly when the density of transmitters is high. For a section of a European city, we introduce a new stochastic model of a single network cell that uses ray launching data generated with the open source RaLaNS package, giving deterministic path loss values. We collect statistics on the fraction of (dis)connected users in the uplink, and observe that the probability of an unexpected large proportion of disconnected users decreases exponentially when the transmitter density increases. This observation implies that denser networks become more stable in the sense that the probability of the fraction of (dis)connected users deviating from its mean, is exponentially small. We also empirically obtain and illustrate the density of users for network configurations in the disruptive event, which highlights the fact that such bottleneck behaviour not only stems from too many users at the cell boundary, but also from the near-far effect of many users in the immediate vicinity of the base station. We discuss the implications of these findings and outline possible future research directions.
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    Fast scatterometric measurement of periodic surface structures plasma-etching processes
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2018) Klesse, Wolfgang Matthias; Rathsfeld, Andreas; Groß, Claudine; Malguth, Enno; Skibitzki, Oliver; Zealouk, Lahbib
    To satisfy the continuous demand of ever smaller feature sizes, plasma etching technologies in microelectronics processing enable the fabrication of device structures with dimensions in the nanometer range. In a typical plasma etching system a plasma phase of a selected etching gas is activated, thereby generating highly energetic and reactive gas species which ultimately etch the substrate surface. Such dry etching processes are highly complex and require careful adjustment of many process parameters to meet the high technology requirements on the structure geometry. In this context, real-time access of the structures dimensions during the actual plasma process would be of great benefit by providing full dimension control and film integrity in real-time. In this paper, we evaluate the feasibility of reconstructing the etched dimensions with nanometer precision from reflectivity spectra of the etched surface, which are measured in real-time throughout the entire etch process. We develop and test a novel and fast reconstruction algorithm, using experimental reflection spectra taken about every second during the etch process of a periodic 2D model structure etched into a silicon substrate. Unfortunately, the numerical simulation of the reflectivity by Maxwell solvers is time consuming since it requires separate time-harmonic computations for each wavelength of the spectrum. To reduce the computing time, we propose that a library of spectra should be generated before the etching process. Each spectrum should correspond to a vector of geometry parameters s.t. the vector components scan the possible range of parameter values for the geometrical dimensions. We demonstrate that by replacing the numerically simulated spectra in the reconstruction algorithm by spectra interpolated from the library, it is possible to compute the geometry parameters in times less than a second. Finally, to also reduce memory size and computing time for the library, we reduce the scanning of the parameter values to a sparse grid.