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Type: Text × Publisher: London : Nature Publishing Group × Subject: Optical physics × WGL Institute: PDI ×

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    Wavelength-tunable sources of entangled photons interfaced with atomic vapours
    (London : Nature Publishing Group, 2016) Trotta, Rinaldo; Martín-Sánchez, Javier; Wildmann, Johannes S.; Piredda, Giovanni; Reindl, Marcus; Schimpf, Christian; Zallo, Eugenio; Stroj, Sandra; Edlinger, Johannes; Rastelli, Armando
    The prospect of using the quantum nature of light for secure communication keeps spurring the search and investigation of suitable sources of entangled photons. A single semiconductor quantum dot is one of the most attractive, as it can generate indistinguishable entangled photons deterministically and is compatible with current photonic-integration technologies. However, the lack of control over the energy of the entangled photons is hampering the exploitation of dissimilar quantum dots in protocols requiring the teleportation of quantum entanglement over remote locations. Here we introduce quantum dot-based sources of polarization-entangled photons whose energy can be tuned via three-directional strain engineering without degrading the degree of entanglement of the photon pairs. As a test-bench for quantum communication, we interface quantum dots with clouds of atomic vapours, and we demonstrate slow-entangled photons from a single quantum emitter. These results pave the way towards the implementation of hybrid quantum networks where entanglement is distributed among distant parties using optoelectronic devices.
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    Observation of T2-like coherent optical phonons in epitaxial Ge2Sb2Te5/GaSb(001) films
    (London : Nature Publishing Group, 2013) Shalini, A.; Liu, Y.; Al-Jarah, U.A.S.; Srivastava, G.P.; Wright, C.D.; Katmis, F.; Braun, W.; Hicken, R.J.
    The phonon spectrum of Ge2Sb2Te5 is a signature of its crystallographic structure and underlies the phase transition process used in memory applications. Epitaxial materials allow coherent optical phonons to be studied in femtosecond anisotropic reflectance measurements. A dominant phonon mode with frequency of 3.4 THz has been observed in epitaxial Ge2Sb2Te5 grown on GaSb(001). The dependence of signal strength upon pump and probe polarization is described by a theory of transient stimulated Raman scattering that accounts for the symmetry of the crystallographic structure through use of the Raman tensor. The 3.4 THz mode has the character of the 3 dimensional T2 mode expected for the Oh point group, confirming that the underlying crystallographic structure is cubic. New modes are observed in both Ge2Sb2Te5 and GaSb after application of large pump fluences, and are interpreted as 1 and 2 dimensional modes associated with segregation of Sb.