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- ItemEvolution of the charge carrier plasmon in the one-dimensional metal TTF-TCNQ as a function of temperature and momentum(Bristol : Institute of Physics Publishing, 2019) Kovbasa, N.; Graf, L.; Knupfer, M.We have investigated the charge carrier plasmon in the quasi one-dimensional metal TTF-TCNQ using electron energy-loss spectroscopy. Our data reveal a negative plasmon dispersion with a slope that is independent of temperature, which is in agreement to predictions from model calculations and previous room temperature data. A plasmon energy shift upon temperature is observed, and we discuss possible contributions to this shift. The spectral width of the plasmon is rather temperature independent, but increases clearly above a momentum value of about 0.3 Å-1.
- ItemInvestigation of the copper gettering mechanism of oxide precipitates in silicon(Pennington, NJ : ECS, 2015) Kissinger, G.; Kot, D.; Klingsporn, M.; Schubert, M.A.; Sattler, A.; Müller, T.One of the reasons why the principal gettering mechanism of copper at oxide precipitates is not yet clarified is that it was not possible to identify the presence and measure the copper concentration in the vicinity of oxide precipitates. To overcome the problem we used a 14.5 nm thick thermal oxide layer as a model system for an oxide precipitate to localize the place where the copper is collected. We also analyzed a plate-like oxide precipitate by EDX and EELS and compared the results with the analysis carried out on the oxide layer. It is demonstrated that both the interface between the oxide precipitate being SiO2 and the silicon matrix and the interface between the thermal oxide and silicon consist of a 2–3 nm thick SiO layer. As the results of these experiments also show that copper segregates at the SiO interface layer of the thermal oxide it is concluded that gettering of copper by oxide precipitates is based on segregation of copper to the SiO interface layer.